A device includes: a first chip including a qubit; and a second chip bonded to the first chip, the second chip including a substrate including first and second opposing surfaces, the first surface facing the first chip, wherein the second chip includes a single layer of superconductor material on the first surface of the substrate, the single layer of superconductor material including a first circuit element. The second chip further includes a second layer on the second surface of the substrate, the second layer including a second circuit element. The second chip further includes a through connector that extends from the first surface of the substrate to the second surface of the substrate and electrically connects a portion of the single layer of superconducting material to the second circuit element.

A temporary chip assembly, a display panel, and manufacturing methods of the temporary chip assembly and the display panel are provided. In the display panel, welding points between a micro light-emitting chip and corresponding bonding pads on a display backboard are covered with pyrolytic adhesive to block water and oxygen, thereby slowing down or avoiding the oxidation of the welding points.

A display panel including a circuit board having first pads, a plurality of light emitting devices disposed on the circuit board and having second pads, at least one of the light emitting devices including a repaired light emitting device, and a metal bonding layer bonding the first pads and the second pads, in which the metal bonding layer of the repaired light emitting device has at least one of a thickness and a composition different from that of the metal bonding layer of the remaining light emitting devices.

A display panel including a circuit board having first pads, a plurality of light emitting devices disposed on the circuit board and having second pads, at least one of the light emitting devices including a repaired light emitting device, and a metal bonding layer bonding the first pads and the second pads, in which the metal bonding layer of the repaired light emitting device has at least one of a thickness and a composition different from that of the metal bonding layer of the remaining light emitting devices.

A semiconductor device and a method of forming the same are provided. The semiconductor device includes a die structure including a plurality of die regions and a plurality of first seal rings. Each of the plurality of first seal rings surrounds a corresponding die region of the plurality of die regions. The semiconductor device further includes a second seal ring surrounding the plurality of first seal rings and a plurality of connectors bonded to the die structure. Each of the plurality of connectors has an elongated plan-view shape. A long axis of the elongated plan-view shape of each of the plurality of connectors is oriented toward a center of the die structure.

A semiconductor device and a method of forming the same are provided. The semiconductor device includes a die structure including a plurality of die regions and a plurality of first seal rings. Each of the plurality of first seal rings surrounds a corresponding die region of the plurality of die regions. The semiconductor device further includes a second seal ring surrounding the plurality of first seal rings and a plurality of connectors bonded to the die structure. Each of the plurality of connectors has an elongated plan-view shape. A long axis of the elongated plan-view shape of each of the plurality of connectors is oriented toward a center of the die structure.

A display panel including a circuit board having first pads, light emitting devices disposed on the circuit board and having second pads and including at least one first light emitting device to emit light having a first peak wavelength and second light emitting devices to emit light having a second peak wavelength, and a metal bonding layer electrically connecting the first pads and the second pads, in which the metal bonding layer of the first light emitting device has a thickness different from that of the metal bonding layer of the second light emitting devices while including a same material, and an upper surface of the second light devices are disposed at an elevation between an upper surface and a bottom surface of the first light emitting device.

A display panel including a circuit board having first pads, light emitting devices disposed on the circuit board and having second pads and including at least one first light emitting device to emit light having a first peak wavelength and second light emitting devices to emit light having a second peak wavelength, and a metal bonding layer electrically connecting the first pads and the second pads, in which the metal bonding layer of the first light emitting device has a thickness different from that of the metal bonding layer of the second light emitting devices while including a same material, and an upper surface of the second light devices are disposed at an elevation between an upper surface and a bottom surface of the first light emitting device.

A semiconductor device and a semiconductor package including the same are provided. The semiconductor device includes a semiconductor element; a protective layer disposed adjacent to the surface of the semiconductor element, the protective layer defining an opening to expose the semiconductor element; a first bump disposed on the semiconductor element; and a second bump disposed onto the surface of the protective layer. The first bump has a larger cross-section surface area than the second bump.

A semiconductor device and a semiconductor package including the same are provided. The semiconductor device includes a semiconductor element; a protective layer disposed adjacent to the surface of the semiconductor element, the protective layer defining an opening to expose the semiconductor element; a first bump disposed on the semiconductor element; and a second bump disposed onto the surface of the protective layer. The first bump has a larger cross-section surface area than the second bump.