Disclosed are an electronic device and a manufacturing method of an electronic device. The manufacturing method includes the following. A first substrate is provided. The first substrate includes a plurality of chips. A second substrate is provided. A transfer process is performed to sequentially transfer a first chip and a second chip among the chips to the second substrate. The second chip is adjacent to the first chip. A first angle is between a first extension direction of a first side of the first chip and an extension direction of a first boundary of the second substrate. A second angle is between a second extension direction of a second side of the second chip and the extension direction of the first boundary of the second substrate. The first angle is different from the second angle.

An array substrate includes a glass substrate GS, an alignment mark 29, and first traces 19. The glass substrate GS has a corner portion 30 having an outline defined by a first edge portion 11b1 and a second edge portion 11b2 crossing the first edge portion 11b1. The alignment mark 29 is disposed at the corner portion 30 and used as the positioning index in mounting a driver 21 and a flexible printed circuit board 13. The alignment mark 29 at least includes first and second side portions 29a, 29b parallel to the first and second edge portions 11b1, 11b2, respectively. One end of the second side portion 29b is continuous to one end of the first side portion 29a. The alignment mark 29 has an outline that is on a same plane with a reference line BL connecting other ends of the first side portion 29a and the second side portion 29b linearly. The first traces 19 include inclined portions 31 that are inclined with respect to the first and second side portions 29a, 29b along the reference line BL.

A light-emitting device includes a carrier, a light-emitting element and a connection structure. The carrier includes a first electrical conduction portion. The light-emitting element includes a first light-emitting layer capable of emitting first light and a first contact electrode formed under the light-emitting layer. The first contact electrode is corresponded to the first electrical conduction portion. The connection structure includes a first electrical connection portion and a protective portion surrounding the first contact electrode and the first electrical connection portion. The first electrical connection portion includes an upper portion, a lower portion and a neck portion arranged between the upper portion and the lower portion. An edge of the upper portion is protruded beyond the neck portion, and an edge of the lower portion is protruded beyond the upper portion.

A light-emitting device includes a carrier, a light-emitting element and a connection structure. The carrier includes a first electrical conduction portion. The light-emitting element includes a first light-emitting layer capable of emitting first light and a first contact electrode formed under the light-emitting layer. The first contact electrode is corresponded to the first electrical conduction portion. The connection structure includes a first electrical connection portion and a protective portion surrounding the first contact electrode and the first electrical connection portion. The first electrical connection portion includes an upper portion, a lower portion and a neck portion arranged between the upper portion and the lower portion. An edge of the upper portion is protruded beyond the neck portion, and an edge of the lower portion is protruded beyond the upper portion.

The present disclosure provides an electronic device including a substrate, a conductive pad, a chip and an insulating layer. The conductive pad is disposed on the substrate. The chip is disposed on the conductive pad. The insulating layer is disposed between the conductive pad and the chip, wherein the insulating layer includes an opening, and the chip is electrically connected to the conductive pad through the opening. An outline of the opening includes a plurality of curved corners in a normal direction of the substrate.

The present disclosure provides an electronic device including a substrate, a conductive pad, a chip and an insulating layer. The conductive pad is disposed on the substrate. The chip is disposed on the conductive pad. The insulating layer is disposed between the conductive pad and the chip, wherein the insulating layer includes an opening, and the chip is electrically connected to the conductive pad through the opening. An outline of the opening includes a plurality of curved corners in a normal direction of the substrate.

Disclosed are redistribution substrates and semiconductor packages including the same. For example, a redistribution substrate including a dielectric pattern, and a first redistribution pattern in the dielectric pattern is provided. The first redistribution pattern may include: a first via part having a first via seed pattern and a first via conductive pattern on the first via seed pattern, and a first wiring part having a first wiring seed pattern and a first wiring conductive pattern, the first wiring part being disposed on the first via part and having a horizontal width that is different from a horizontal width of the first via part. Additionally, the first wiring seed pattern may cover a bottom surface and a sidewall surface of the first wiring conductive pattern, and the first via conductive pattern is directly connected to the first wiring conductive pattern.

A semiconductor package includes a first semiconductor chip comprising a semiconductor substrate and a redistribution pattern on a top surface of the semiconductor substrate, the redistribution pattern having a hole exposing an inner sidewall of the redistribution pattern, a second semiconductor chip on a top surface of the first semiconductor chip, and a bump structure disposed between the first semiconductor chip and the second semiconductor chip. The bump structure is disposed in the hole and is in contact with the inner sidewall of the redistribution pattern.

A semiconductor package includes a first semiconductor chip comprising a semiconductor substrate and a redistribution pattern on a top surface of the semiconductor substrate, the redistribution pattern having a hole exposing an inner sidewall of the redistribution pattern, a second semiconductor chip on a top surface of the first semiconductor chip, and a bump structure disposed between the first semiconductor chip and the second semiconductor chip. The bump structure is disposed in the hole and is in contact with the inner sidewall of the redistribution pattern.

Disclosed is a semiconductor device comprising a semiconductor substrate, an under-bump pattern on the semiconductor substrate and including a first metal, a bump pattern on the under-bump pattern, and an organic dielectric layer on the semiconductor substrate and in contact with a sidewall of the bump pattern. The bump pattern includes a support pattern in contact with the under-bump pattern and having a first width, and a solder pillar pattern on the support pattern and having a second width. The first width is greater than the second width. The support pattern includes at least one of a solder material and an intermetallic compound (IMC). The intermetallic compound includes the first metal and the solder material.