H01L2224/81493

Chip package structure with conductive adhesive layer and method for forming the same

A method for forming a chip package structure is provided. The method includes providing a wiring substrate including a substrate, a pad, and a polymer layer. The polymer layer is over the substrate and the pad, and the polymer layer has a first opening exposing the pad. The method includes forming a conductive adhesive layer over the polymer layer and the pad. The conductive adhesive layer is in direct contact with and conformally covers the polymer layer and the pad. The method includes forming a nickel layer over the conductive adhesive layer. The nickel layer is thicker than the conductive adhesive layer, and the nickel layer and the conductive adhesive layer are made of different materials. The method includes bonding a chip to the wiring substrate through a conductive bump. The conductive bump is between the nickel layer and the chip.

High-speed RFID tag assembly using impulse heating

RFID inlays or straps may be assembled using impulse heating of metal precursors. Metal precursors are applied to and/or included in contacts on an RFID IC and/or terminals on a substrate. During assembly of the tag, the IC is disposed onto the substrate such that the IC contacts physically contact either the substrate terminals or metal precursors that in turn physically contact the substrate terminals. Impulse heating is then used to rapidly apply heat to the metal precursors, processing them into metallic structures that electrically couple the IC contacts to the substrate terminals.

CHIP PACKAGE STRUCTURE WITH CONDUCTIVE ADHESIVE LAYER AND METHOD FOR FORMING THE SAME
20210313195 · 2021-10-07 ·

A method for forming a chip package structure is provided. The method includes providing a wiring substrate including a substrate, a pad, and a polymer layer. The polymer layer is over the substrate and the pad, and the polymer layer has a first opening exposing the pad. The method includes forming a conductive adhesive layer over the polymer layer and the pad. The conductive adhesive layer is in direct contact with and conformally covers the polymer layer and the pad. The method includes forming a nickel layer over the conductive adhesive layer. The nickel layer is thicker than the conductive adhesive layer, and the nickel layer and the conductive adhesive layer are made of different materials. The method includes bonding a chip to the wiring substrate through a conductive bump. The conductive bump is between the nickel layer and the chip.

CHIP PACKAGE STRUCTURE AND METHOD OF FORMING THE SAME
20210074682 · 2021-03-11 ·

A package structure and a method of forming the same are provided. The package structure includes a package substrate and an interposer substrate over the package substrate. The interposer substrate has a first surface facing the package substrate and a second surface opposite the first surface. A first semiconductor device is disposed on the first surface, and a second semiconductor device is disposed on the second surface. Conductive structures are disposed between the interposer substrate and the package substrate. The first semiconductor device is located between the conductive structures. A first side of the first semiconductor device is at a first distance from the most adjacent conductive structure, and a second side of the first semiconductor device is at a second distance from the most adjacent conductive structure. The first side is opposite the second side, and the first distance is greater than the second distance.

High-speed RFID tag assembly using impulse heating

RFID inlays or straps may be assembled using impulse heating of metal precursors. Metal precursors are applied to and/or included in contacts on an RFID IC and/or terminals on a substrate. During assembly of the tag, the IC is disposed onto the substrate such that the IC contacts physically contact either the substrate terminals or metal precursors that in turn physically contact the substrate terminals. Impulse heating is then used to rapidly apply heat to the metal precursors, processing them into metallic structures that electrically couple the IC contacts to the substrate terminals.

SEMICONDUCTOR DEVICE WITH ENHANCED THERMAL DISSIPATION AND METHOD FOR MAKING THE SAME

A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of 50 W/mK.

SEMICONDUCTOR DEVICE WITH ENHANCED THERMAL DISSIPATION AND METHOD FOR MAKING THE SAME

A method includes forming a solder layer on a surface of one or more chips. A lid is positioned over the solder layer on each of the one or more chips. Heat and pressure are applied to melt the solder layer and attach each lid to a corresponding solder layer. The solder layer has a thermal conductivity of 50 W/mK.

Display device
10468394 · 2019-11-05 · ·

A display device includes an array substrate, two light-emitting element substrates, a plurality of first connection elements, and a plurality of second connection elements. The array substrate includes two pixel circuits. Each of the pixel circuits includes three sub-pixel circuits, three first conductive pads, and a second conductive pad. Each of the light-emitting element substrates includes three light-emitting elements, three first connection pads, and a second connection pad. The first connection elements respectively and electrically connect corresponding one of the first conductive pads to corresponding one of the first connection pads. The second connection elements respectively and electrically connect corresponding one of the second conductive pads to corresponding one of the second connection pads.

Display device
10468394 · 2019-11-05 · ·

A display device includes an array substrate, two light-emitting element substrates, a plurality of first connection elements, and a plurality of second connection elements. The array substrate includes two pixel circuits. Each of the pixel circuits includes three sub-pixel circuits, three first conductive pads, and a second conductive pad. Each of the light-emitting element substrates includes three light-emitting elements, three first connection pads, and a second connection pad. The first connection elements respectively and electrically connect corresponding one of the first conductive pads to corresponding one of the first connection pads. The second connection elements respectively and electrically connect corresponding one of the second conductive pads to corresponding one of the second connection pads.

Semiconductor Device Circuit Apparatus Bonded with Anisotropic Conductive Film and Method of Direct Transfer for Making the Same

An apparatus includes a circuit substrate including a circuit trace and a micro-sized semiconductor device die electrically connected to the circuit substrate. The micro-sized semiconductor device die has a height not greater than 400 microns and a width not greater than 800 microns. An anisotropic conductive adhesive (ACA) is disposed between the circuit substrate and the micro-sized semiconductor device die, thereby providing an electrical connection from the circuit substrate to the micro-sized semiconductor device die.