The method of bonding an interposer and an integrated circuit chip includes preparing an interposer including an insulator and conductive lines each having one end exposed to a first surface of the insulator and another end exposed to a second surface opposite to the first surface; placing a bonding mask on the interposer; forming through-holes on the bonding mask before or after the placing of the bonding mask on the interposer; filling the plurality with a conductive material; and bonding an integrated circuit chip to the bonding mask.

The method of bonding an interposer and an integrated circuit chip includes preparing an interposer including an insulator and conductive lines each having one end exposed to a first surface of the insulator and another end exposed to a second surface opposite to the first surface; placing a bonding mask on the interposer; forming through-holes on the bonding mask before or after the placing of the bonding mask on the interposer; filling the plurality with a conductive material; and bonding an integrated circuit chip to the bonding mask.

A mounting structure includes a bonding material (106) that bonds second electrodes (104) of a circuit board (105) and bumps (103) of a semiconductor package (101), the bonding material (106) being surrounded by a first reinforcing resin (107). Moreover, a portion between the outer periphery of the semiconductor package (101) and the circuit board (105) is covered with a second reinforcing resin (108). Even if the bonding material (106) is a solder material having a lower melting point than a conventional bonding material, high drop resistance is obtained.

A mounting structure includes a bonding material (106) that bonds second electrodes (104) of a circuit board (105) and bumps (103) of a semiconductor package (101), the bonding material (106) being surrounded by a first reinforcing resin (107). Moreover, a portion between the outer periphery of the semiconductor package (101) and the circuit board (105) is covered with a second reinforcing resin (108). Even if the bonding material (106) is a solder material having a lower melting point than a conventional bonding material, high drop resistance is obtained.

A semiconductor device having a semiconductor module that includes a first conductor layer and a second conductor layer facing each other, a group of semiconductor elements that are formed between the first and second conductor layers, and are connected to the second conductor layer respectively via a group of conductor blocks, and a circuit board having one end portion thereof located in a space between the semiconductor elements and the second conductor layer. Each semiconductor element includes first and second main electrodes respectively formed on first and second main surfaces thereof, and a control electrode that is formed on the second main surface. The first main electrode is electrically connected to the first conductor layer. The second main electrode is electrically connected to the second conductor layer via the respective conductor block. The circuit board includes a first wiring layer electrically connected to the control electrodes of the semiconductor elements.

A semiconductor device having a semiconductor module that includes a first conductor layer and a second conductor layer facing each other, a group of semiconductor elements that are formed between the first and second conductor layers, and are connected to the second conductor layer respectively via a group of conductor blocks, and a circuit board having one end portion thereof located in a space between the semiconductor elements and the second conductor layer. Each semiconductor element includes first and second main electrodes respectively formed on first and second main surfaces thereof, and a control electrode that is formed on the second main surface. The first main electrode is electrically connected to the first conductor layer. The second main electrode is electrically connected to the second conductor layer via the respective conductor block. The circuit board includes a first wiring layer electrically connected to the control electrodes of the semiconductor elements.

A semiconductor-mounted product includes a semiconductor package, a wiring substrate, four or more soldered portions, and a resin-reinforced portion. Each of the soldered portions electrically connects the semiconductor package to the wiring of the wiring substrate. The resin-reinforced portion is formed on a side surface of each of the soldered portions. Each of the soldered portions has a first solder region formed closer to the semiconductor package than the wiring substrate and a second solder region formed closer to the wiring substrate than the semiconductor package. A proportion of a void present in a polygon connecting centers of soldered portions located at outermost positions among the soldered portions to a sum of the void and the resin-reinforced portion is from 10% to 99%, inclusive.

A semiconductor-mounted product includes a semiconductor package, a wiring substrate, four or more soldered portions, and a resin-reinforced portion. Each of the soldered portions electrically connects the semiconductor package to the wiring of the wiring substrate. The resin-reinforced portion is formed on a side surface of each of the soldered portions. Each of the soldered portions has a first solder region formed closer to the semiconductor package than the wiring substrate and a second solder region formed closer to the wiring substrate than the semiconductor package. A proportion of a void present in a polygon connecting centers of soldered portions located at outermost positions among the soldered portions to a sum of the void and the resin-reinforced portion is from 10% to 99%, inclusive.

Electronic assemblies may be fabricated with interconnects of different types present in multiple locations and comprising fused copper nanoparticles. Each interconnect or a portion thereof comprises a bulk copper matrix formed from fusion of copper nanoparticles or a reaction product formed from copper nanoparticles. The interconnects may comprise a copper-based wire bonding assembly, a copper-based flip chip connection, a copper-based hermetic seal assembly, a copper-based connector between an IC substrate and a package substrate, a copper-based component interconnect, a copper-based interconnect comprising via copper for establishing electrical communication between opposite faces of a package substrate, a copper-based interconnect defining a heat channel formed from via copper, and any combination thereof.

The semiconductor memory device includes: a first substrate including a peripheral circuit, first conductive contact patterns connected to the peripheral circuit, and a first upper insulating layer having grooves exposing the first conductive contact patterns; a second substrate including a memory cell array, a second upper insulating layer disposed on the memory cell array, the second upper insulating layer formed between the memory cell array and the first upper insulating layer, second conductive contact patterns protruding through the second upper insulating layer into an opening of the grooves; and conductive adhesive patterns filling the grooves to connect the second conductive contact patterns to the first conductive contact patterns.