An optical module includes an optical semiconductor chip including a first electrode pad, a second electrode pad, and a third electrode pad arranged between the first electrode pad and the second electrode pad, a wiring substrate on which the optical semiconductor chip is flip-chip mounted, including a fourth electrode pad, a fifth electrode pad, and a sixth electrode pad arranged between the fourth electrode pad and the fifth electrode pad, a first conductive material connecting the first electrode pad with the fourth electrode pad, a second conductive material connecting the second electrode pad with the fifth electrode pad, a third conductive material arranged between the first conductive material and the second conductive material, connecting the third electrode pad with the sixth electrode pad, and a resin provided in an area on the second conductive material side of the third conductive material between the optical semiconductor chip and the wiring substrate.

An optical module includes an optical semiconductor chip including a first electrode pad, a second electrode pad, and a third electrode pad arranged between the first electrode pad and the second electrode pad, a wiring substrate on which the optical semiconductor chip is flip-chip mounted, including a fourth electrode pad, a fifth electrode pad, and a sixth electrode pad arranged between the fourth electrode pad and the fifth electrode pad, a first conductive material connecting the first electrode pad with the fourth electrode pad, a second conductive material connecting the second electrode pad with the fifth electrode pad, a third conductive material arranged between the first conductive material and the second conductive material, connecting the third electrode pad with the sixth electrode pad, and a resin provided in an area on the second conductive material side of the third conductive material between the optical semiconductor chip and the wiring substrate.

The method of bonding an interposer and an integrated circuit chip includes preparing an interposer including an insulator and conductive lines each having one end exposed to a first surface of the insulator and another end exposed to a second surface opposite to the first surface; placing a bonding mask on the interposer; forming through-holes on the bonding mask before or after the placing of the bonding mask on the interposer; filling the plurality with a conductive material; and bonding an integrated circuit chip to the bonding mask.

The method of bonding an interposer and an integrated circuit chip includes preparing an interposer including an insulator and conductive lines each having one end exposed to a first surface of the insulator and another end exposed to a second surface opposite to the first surface; placing a bonding mask on the interposer; forming through-holes on the bonding mask before or after the placing of the bonding mask on the interposer; filling the plurality with a conductive material; and bonding an integrated circuit chip to the bonding mask.

A semiconductor device having a semiconductor module that includes a first conductor layer and a second conductor layer facing each other, a group of semiconductor elements that are formed between the first and second conductor layers, and are connected to the second conductor layer respectively via a group of conductor blocks, and a circuit board having one end portion thereof located in a space between the semiconductor elements and the second conductor layer. Each semiconductor element includes first and second main electrodes respectively formed on first and second main surfaces thereof, and a control electrode that is formed on the second main surface. The first main electrode is electrically connected to the first conductor layer. The second main electrode is electrically connected to the second conductor layer via the respective conductor block. The circuit board includes a first wiring layer electrically connected to the control electrodes of the semiconductor elements.

A semiconductor device having a semiconductor module that includes a first conductor layer and a second conductor layer facing each other, a group of semiconductor elements that are formed between the first and second conductor layers, and are connected to the second conductor layer respectively via a group of conductor blocks, and a circuit board having one end portion thereof located in a space between the semiconductor elements and the second conductor layer. Each semiconductor element includes first and second main electrodes respectively formed on first and second main surfaces thereof, and a control electrode that is formed on the second main surface. The first main electrode is electrically connected to the first conductor layer. The second main electrode is electrically connected to the second conductor layer via the respective conductor block. The circuit board includes a first wiring layer electrically connected to the control electrodes of the semiconductor elements.

A method includes forming a redistribution structure including metallization patterns; attaching a semiconductor device to a first side of the redistribution structure; encapsulating the semiconductor device with a first encapsulant; forming openings in the first encapsulant, the openings exposing a metallization pattern of the redistribution structure; forming a conductive material in the openings, comprising at least partially filling the openings with a conductive paste; after forming the conductive material, attaching integrated devices to a second side of the redistribution structure; encapsulating the integrated devices with a second encapsulant; and after encapsulating the integrated devices, forming a pre-solder material on the conductive material.

A method includes forming a redistribution structure including metallization patterns; attaching a semiconductor device to a first side of the redistribution structure; encapsulating the semiconductor device with a first encapsulant; forming openings in the first encapsulant, the openings exposing a metallization pattern of the redistribution structure; forming a conductive material in the openings, comprising at least partially filling the openings with a conductive paste; after forming the conductive material, attaching integrated devices to a second side of the redistribution structure; encapsulating the integrated devices with a second encapsulant; and after encapsulating the integrated devices, forming a pre-solder material on the conductive material.

A module includes a substrate, a plurality of components on an upper surface of the substrate, a component on a lower surface of the substrate, solder balls on the lower surface, sealing resin layers stacked on the upper surface and the lower surface of the substrate, and a shield film covering a side surface and an upper surface of the module. Part of each solder ball is exposed from a surface of the sealing resin layer, and the exposed parts are shaped to protrude from the sealing resin layer. The module can be connected to a mother substrate by connecting the protruding parts of the solder balls. There are gaps between the solder balls and the sealing resin layer, and the occurrence of cracks in the solder balls can be suppressed by reducing stress arising from a difference in thermal expansion coefficient between the solder and the resin.

A module includes a substrate, a plurality of components on an upper surface of the substrate, a component on a lower surface of the substrate, solder balls on the lower surface, sealing resin layers stacked on the upper surface and the lower surface of the substrate, and a shield film covering a side surface and an upper surface of the module. Part of each solder ball is exposed from a surface of the sealing resin layer, and the exposed parts are shaped to protrude from the sealing resin layer. The module can be connected to a mother substrate by connecting the protruding parts of the solder balls. There are gaps between the solder balls and the sealing resin layer, and the occurrence of cracks in the solder balls can be suppressed by reducing stress arising from a difference in thermal expansion coefficient between the solder and the resin.