Patent classifications
H
ELECTRICITY
Load children
H01
ELECTRIC ELEMENTS
Load children
H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
Load children
2224/00
Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/80
Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/8138
Bonding interfaces outside the semiconductor or solid-state body
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/81498
with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/817
with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/81738
the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/81739
Silver [Ag] as principal constituent
Filter patents View analytics View as hierarchy Open in page

H01L2224/81739

HYBRID BONDING STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME
20220077100 · 2022-03-10 · ·

A hybrid bonding structure and a semiconductor including the hybrid bonding structure are provided. The hybrid bonding structure includes a solder ball and a solder paste bonded to the solder ball. The solder paste may include solder particles including at least one of In, Zn, SnBiAg alloy, or SnBi alloy, and ceramic particles. The solder paste may include a flux. The solder particles may include Sn(42.0 wt %)-Ag(0.4 wt %)-Bi(57.5−X) wt %, and the ceramic particles include CeO.sub.2(X) wt %, where 0.05≤X≤0.1.

HYBRID BONDING STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING THE SAME
20220077100 · 2022-03-10 · ·

A hybrid bonding structure and a semiconductor including the hybrid bonding structure are provided. The hybrid bonding structure includes a solder ball and a solder paste bonded to the solder ball. The solder paste may include solder particles including at least one of In, Zn, SnBiAg alloy, or SnBi alloy, and ceramic particles. The solder paste may include a flux. The solder particles may include Sn(42.0 wt %)-Ag(0.4 wt %)-Bi(57.5−X) wt %, and the ceramic particles include CeO.sub.2(X) wt %, where 0.05≤X≤0.1.

Semiconductor Device Circuit Apparatus Bonded with Anisotropic Conductive Film and Method of Direct Transfer for Making the Same
20180248090 · 2018-08-30 ·

An apparatus includes a circuit substrate including a circuit trace and a micro-sized semiconductor device die electrically connected to the circuit substrate. The micro-sized semiconductor device die has a height not greater than 400 microns and a width not greater than 800 microns. An anisotropic conductive adhesive (ACA) is disposed between the circuit substrate and the micro-sized semiconductor device die, thereby providing an electrical connection from the circuit substrate to the micro-sized semiconductor device die.

Semiconductor Device Circuit Apparatus Bonded with Anisotropic Conductive Film and Method of Direct Transfer for Making the Same
20180248090 · 2018-08-30 ·

An apparatus includes a circuit substrate including a circuit trace and a micro-sized semiconductor device die electrically connected to the circuit substrate. The micro-sized semiconductor device die has a height not greater than 400 microns and a width not greater than 800 microns. An anisotropic conductive adhesive (ACA) is disposed between the circuit substrate and the micro-sized semiconductor device die, thereby providing an electrical connection from the circuit substrate to the micro-sized semiconductor device die.