A semiconductor package of a pin-grid-array type includes a bump pad on a first substrate, a metal socket on a second substrate, a core material for reverse reflow on the bump pad, and solder paste or a solder bump forming a solder layer on the core material for reverse reflow. The solder paste or the solder bump is in contact with the bump pad. The core material for reverse reflow and the solder paste or the solder bump bonded to the core material for reverse reflow are used as a pin and detachably attached to the metal socket. The core material for reverse reflow includes a core, a first metal layer directly coated on the core, and a second metal layer directly coated on the first metal layer.

A cell of fluidic assembly of microchips on a substrate, including: a base having its upper surface intended to receive the substrate; a body laterally delimiting a fluidic chamber above the substrate; and a cover closing the fluidic chamber from its upper surface, wherein the body comprises first and second nozzles respectively emerging onto opposite first and second lateral edges of the fluidic chamber, each of the first and second nozzles being adapted to injecting and/or sucking in a liquid suspension of microchips into and/or from the fluidic chamber, in a direction parallel to the mean plane of the substrate.

A cell of fluidic assembly of microchips on a substrate, including: a base having its upper surface intended to receive the substrate; a body laterally delimiting a fluidic chamber above the substrate; and a cover closing the fluidic chamber from its upper surface, wherein the body comprises first and second nozzles respectively emerging onto opposite first and second lateral edges of the fluidic chamber, each of the first and second nozzles being adapted to injecting and/or sucking in a liquid suspension of microchips into and/or from the fluidic chamber, in a direction parallel to the mean plane of the substrate.

In a method for manufacturing a radiation detector, counter pixel electrodes 33 are formed on a counter substrate 2 at positions facing a plurality of pixel electrodes formed on a signal reading substrate, and wall bump electrodes 34 are further formed on the counter pixel electrodes 33. In order to achieve the above, a resist R is applied, and the resist R is exposed to light to form openings O. When Au sputter deposition is performed on the openings O, only some of the Au is deposited on the bottom surface in the openings O as the counter pixel electrodes 33. The rest of the Au is not deposited on the bottom surface in the openings O, and the most of the remaining Au adheres to the inner walls of the openings O to form wall bump electrodes 34. The bump electrodes 34 are cylindrical, making it possible to reduce the pressure acting on the signal reading substrate by an extent corresponding to the decrease in the bonding area in comparison to conventional bump-shaped bump electrodes. The decrease in the bonding area also makes it possible to correspondingly improve the reproducibility of forming the diameter of the electrodes, and make reliable connection possible.

In a method for manufacturing a radiation detector, counter pixel electrodes 33 are formed on a counter substrate 2 at positions facing a plurality of pixel electrodes formed on a signal reading substrate, and wall bump electrodes 34 are further formed on the counter pixel electrodes 33. In order to achieve the above, a resist R is applied, and the resist R is exposed to light to form openings O. When Au sputter deposition is performed on the openings O, only some of the Au is deposited on the bottom surface in the openings O as the counter pixel electrodes 33. The rest of the Au is not deposited on the bottom surface in the openings O, and the most of the remaining Au adheres to the inner walls of the openings O to form wall bump electrodes 34. The bump electrodes 34 are cylindrical, making it possible to reduce the pressure acting on the signal reading substrate by an extent corresponding to the decrease in the bonding area in comparison to conventional bump-shaped bump electrodes. The decrease in the bonding area also makes it possible to correspondingly improve the reproducibility of forming the diameter of the electrodes, and make reliable connection possible.

A semiconductor device includes a box-shaped casing including a ceiling wall with a first window, a semiconductor chip having an output electrode and assembled in the casing, a first conductive block disposed in the casing, and a first connection terminal being bent so as to implement an elongated U-shape. The semiconductor device is adapted for electrical connection to a circuit board having a first land. The circuit board is placed on the ceiling wall. The first window is at a position corresponding to the first land. A lower end of the first conductive block is connected to a surface of the output electrode and the first connection terminal contacts to the first conductive block.

In various embodiments, a flip-chip device is provided. The flip-chip device includes a chip having an electrically conductive chip contact, and a carrier having an electrically conductive contact area for contacting the chip contact. The chip contact includes a material which is at least just as easily deformable as a material of the electrically conductive contact area at least during the contacting of the chip contact. The contact area includes a plurality of depressions. A smallest width of each of the depressions is smaller than a smallest width of the chip contact. Each of the distances between adjacent edges of adjacent depressions is smaller than the smallest width of the chip contact. The plurality of depressions in the contact area are formed as tubular depressions. A ratio of diameter to depth of the tubular depressions is in a range of 1:3 to 1:50.

A device comprises a surface mount component on a substrate, in which the surface mount component is attached by a set of discrete mechanical coupling parts and by a bonding layer. This enables the mechanical coupling properties and the electrical/thermal properties to be optimized separately.

A device comprises a surface mount component on a substrate, in which the surface mount component is attached by a set of discrete mechanical coupling parts and by a bonding layer. This enables the mechanical coupling properties and the electrical/thermal properties to be optimized separately.

A semiconductor device includes a box-shaped casing including a ceiling wall with a first window, a semiconductor chip having an output electrode and assembled in the casing, a first conductive block disposed in the casing, and a first connection terminal being bent so as to implement an elongated U-shape. The semiconductor device is adapted for electrical connection to a circuit board having a first land. The circuit board is placed on the ceiling wall. The first window is at a position corresponding to the first land. A lower end of the first conductive block is connected to a surface of the output electrode and the first connection terminal contacts to the first conductive block.