This publication discloses an electronic module, comprising a first conductive pattern layer and a first insulating-material layer on at least one surface of the first conductive pattern layer, at least one opening in the first insulating-material layer that extends through the first insulating-material layer, a component having a contact surface with contact terminals, the component being arranged at least partially within the opening with its contact terminals electrically coupled to the first conductive pattern layer, a second insulating-material layer provided on the first insulating-material layer, and a conductive pattern embedded between the first and second insulating material layers. This publication additionally discloses a method for manufacturing an electronic module.

Embedded die packaging for semiconductor devices and methods of fabrication wherein conductive vias are provided to interconnect contact areas on the die and package interconnect areas. Before embedding, a protective masking layer is provided selectively on regions of the electrical contact areas where vias are to be formed by laser drilling. The material of the protective masking layer is selected to protect against over-drilling and/or to control absorption properties of surface of the pad metal to reduce absorption of laser energy during laser drilling of micro-vias, thereby mitigating physical damage, overheating or other potential damage to the semiconductor device. The masking layer may be resistant to surface treatment of other regions of the electrical contact areas, e.g. to increase surface roughness to promote adhesion of package dielectric.

An electronic package and a method for manufacturing is provided, having first and opposing second surfaces, and a circuit thereon, each of the first and second surfaces has a terminal connected to the circuit; a conductive element spaced apart from the die with top and a bottom surfaces; a body of molding compound encapsulating the die and the element, the body having a top side facing the first surface and a bottom side facing the second surface; a first package terminal at the top side connected to the terminal at the first surface, and a second package terminal at the top side connected to the top surface of the conductive element, the conductive element is formed from the first package terminal and the second package terminal; and a conductive layer connecting the bottom surface of the conductive element to the terminal arranged on the second surface of the die.

A semiconductor package structure includes a chip, a conductive pillar, a dielectric layer, a first patterned conductive layer and a second patterned conductive layer. The chip has a first side with at least a first metal electrode pad and a second side with at least a second metal electrode pad. The conductive pillar, which has a first end and a second end, is disposed adjacent to the chip. The axis direction of the conductive pillar is parallel to the height direction of the chip. The dielectric layer covers the chip and the conductive pillar and exposes the first and second metal electrode pads of the chip and the first and second ends of the conductive pillar. The first patterned conductive layer is disposed on a second surface of the dielectric layer and electrically connected between the second metal electrode pad and the second end of the conductive pillar. The second patterned conductive layer is disposed on a first surface of the dielectric layer and electrically connected between the first metal electrode pad and the first end of the conductive pillar.

The present disclosure relates to an embedded packaging module comprising a first semiconductor device, a first packaging layer and a first wiring layer, the first semiconductor device having a first and a second face, at least two positioning bulges and at least one bonding pad being provided on the first face of the first semiconductor device; the first packaging layer being formed on both the first face and a surface adjacent to the first face, the positioning bulges being positioned in the first packaging layer, at least one first via hole being provided in the first packaging layer, the bottom of the first via hole being positioned in the bonding pad and contacting with the bonding pad; the first wiring layer being positioned on the side of the first packaging layer away from the first semiconductor device and being electrically connected with the bonding pad through the first via hole.

An embedded module according to the present invention includes a base substrate having a multi-layer wiring, at least two semiconductor chip elements having different element thicknesses, each of the semiconductor chip element having a first surface fixed to the base substrate and having a connection part on a second surface, an insulating photosensitive resin layer enclosing the semiconductor chip elements on the base substrate and being formed by a first wiring photo via, a second wiring photo via, and a wiring, the first wiring photo via electrically connected to the connection part of the semiconductor chip elements, the second wiring photo via arranged at the outer periphery of each of the semiconductor chip elements and electrically connected to a connection part of the base substrate, the wiring arranged so as to be orthogonal to and electrically connected to the first wiring photo via and the second wiring photo via.

A semiconductor package may include a redistribution substrate including first and second surfaces opposite each other, a first semiconductor chip on the first surface, a first molding portion on a side surface of the first semiconductor chip, a second semiconductor chip between the first semiconductor chip and the redistribution substrate, a second molding portion between the redistribution substrate and the first molding portion and on a side surface of the second semiconductor chip, bump patterns between the second semiconductor chip and the redistribution substrate, and a mold via penetrating the second molding portion and electrically connecting the first semiconductor chip to the redistribution substrate. The redistribution substrate may include first and second redistribution patterns sequentially in an insulating layer. The mold via may contact the second redistribution pattern, and the bump patterns may contact the first redistribution pattern.

A semiconductor package includes a first semiconductor chip including a first semiconductor substrate and a first chip pad on a first bottom surface of the first semiconductor substrate, a second semiconductor chip including a second semiconductor substrate and a second chip pad on a second top surface of the second semiconductor substrate, a lower redistribution structure provided under the first semiconductor chip and the second semiconductor chip, the lower redistribution structure including a lower redistribution pattern, the lower redistribution pattern including a first lower redistribution via pattern contacting the first chip pad, a molding layer covering the first semiconductor chip and the second semiconductor chip, an upper redistribution structure including an upper redistribution pattern, the upper redistribution pattern including a first upper redistribution via pattern connected to the second chip pad, and a conductive connection structure electrically connecting the lower redistribution pattern to the upper redistribution pattern.

One or more semiconductor dice are arranged on a substrate. The semiconductor die or dice have a first surface adjacent the substrate and a second surface facing away from the substrate. Laser-induced forward transfer (LIFT) processing is applied to the semiconductor die or dice to form fiducial markers on the second surface of the semiconductor die or dice. Laser direct structuring (LDS) material is molded onto the substrate. The fiducial markers on the second surface of the semiconductor die or dice are optically detectable at the surface of the LDS material. Laser beam processing is applied to the molded LDS material at spatial positions located as a function of the optically detected fiducial markers to provide electrically conductive formations for the semiconductor die or dice.

A substrate structure is disclosed. The substrate structure includes a carrier, a dielectric layer on the carrier, a patterned organic core layer in the dielectric layer, and a conductive via. The patterned organic core layer defines a passage extending in the dielectric layer towards the carrier. The conductive via extends through the passage towards the carrier without contacting the patterned organic core layer.