An example device in accordance with an aspect of the present disclosure includes a first layer and a second layer to be bonded to the first layer. The first and second layers are materials that generate gas byproducts when bonded, and the first and/or second layers is/are compatible with photonic device operation based on a separation distance. At least one bonding interface layer is to establish the separation distance for photonic device operation, and is to prevent gas trapping and to facilitate bonding between the first layer and the second layer.

In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.

In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.

An arrangement for joining two joining members includes a first part having a support surface, a first carrier element configured to carry at least one foil, a transportation unit configured to arrange the first carrier element such that the foil is arranged above the support surface in a vertical direction, and a second part configured to exert pressure to a joining stack, when the joining stack is arranged on the support surface. The joining stack includes a first joining member arranged on the support surface, a second joining member, and an electrically conductive connection layer arranged between the joining members. When pressure is exerted on the joining stack, the foil is arranged between the second part and the joining stack and is pressed onto the joining stack and the joining stack is pressed onto the first part, compressing the connection layer and forming a bond between the joining members.

An arrangement for joining two joining members includes a first part having a support surface, a first carrier element configured to carry at least one foil, a transportation unit configured to arrange the first carrier element such that the foil is arranged above the support surface in a vertical direction, and a second part configured to exert pressure to a joining stack, when the joining stack is arranged on the support surface. The joining stack includes a first joining member arranged on the support surface, a second joining member, and an electrically conductive connection layer arranged between the joining members. When pressure is exerted on the joining stack, the foil is arranged between the second part and the joining stack and is pressed onto the joining stack and the joining stack is pressed onto the first part, compressing the connection layer and forming a bond between the joining members.

A bonding method can include activating a first bonding layer of a first element for direct bonding to a second bonding layer of a second element. The bonding method can include, after the activating, providing a protective layer over the activated first bonding layer of the first element.

A bonding apparatus bonds a first substrate having a first alignment mark and a second substrate having a second alignment mark. A first radiation unit radiates white light to an imaging area of a first imaging unit when the second alignment mark is imaged by the first imaging unit. A second radiation unit radiates white light to an imaging area of a second imaging unit when the first alignment mark is imaged by the second imaging unit. A controller detects positions of the first alignment mark and the second alignment mark by processing images obtained by the first imaging unit and the second imaging unit, corrects the detected position of the first alignment mark based on a relationship between a wavelength and an intensity of reflection light reflected from the first substrate, and controls a moving unit based on the corrected position of the first alignment mark.

The disclosure provides a method of manufacturing a semiconductor device including bonding a second device wafer to a first device wafer, such that a first bonding interface including a fusion-bonding interface is formed between the first device wafer and the second device wafer, wherein the first device wafer and the second device wafer are the same kind of device wafer. A semiconductor device is also provided.

In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.

In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.