In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed.

Provided is a semiconductor device including electronic components electrically joined to each other via a metal nanoparticle sintered layer, wherein the metal nanoparticle sintered layer has formed therein a metal diffusion region in which a metal constituting a metallization layer formed on a surface of one of the electronic components is diffused, and in which the metal is present in an amount of 10 mass % or more and less than 100 mass % according to TEM-EDS analysis, and wherein the metal diffusion region has a thickness smaller than a thickness of the metallization layer.

A method may include forming a first atomic layer deposition (ALD) bonding layer on a surface of a first semiconductor device, and forming a second ALD bonding layer on a surface of a second semiconductor device. The method may include joining the first semiconductor device and the second semiconductor device via the first ALD bonding layer and the second ALD bonding layer. The method may include performing an annealing operation to fuse the first ALD bonding layer and the second ALD bonding layer and form a single ALD bonding layer that bonds the first semiconductor device with the second semiconductor device.

A method may include forming a first atomic layer deposition (ALD) bonding layer on a surface of a first semiconductor device, and forming a second ALD bonding layer on a surface of a second semiconductor device. The method may include joining the first semiconductor device and the second semiconductor device via the first ALD bonding layer and the second ALD bonding layer. The method may include performing an annealing operation to fuse the first ALD bonding layer and the second ALD bonding layer and form a single ALD bonding layer that bonds the first semiconductor device with the second semiconductor device.

A device structure includes a first interconnect layer, a second interconnect layer, a device layer including a comprising a plurality of devices, where the device layer is between the first interconnect layer and the second interconnect layer. The device structure further includes a dielectric layer adjacent the second interconnect layer, where the dielectric layer includes one or more of metallic dopants or a plurality of metal structures, wherein the plurality of metal structures is electrically isolated from interconnect structures but in contact with a dielectric material of the second interconnect layer, and where the individual ones of the plurality of metal structures is above a region including at least some of the plurality of devices. The device structure further includes a substrate adjacent to the dielectric layer and a heat sink coupled with the substrate.

Package structure and method of manufacturing the same are provided. The package structure includes a first die, a second die, a first encapsulant, a bridge die, and a second encapsulant. The first encapsulant laterally encapsulates the first die and the second die. The bridge die is electrically connected to the first die and the second die. The second encapsulant is located over the first die, the second die and the first encapsulant, laterally encapsulating the bridge die and filling a space between the bridge die and the first die, between the bridge die and the first encapsulant and between the bridge die and the second die. A material of the second encapsulant is different from a material of the first encapsulant.

A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.

Package structure and method of manufacturing the same are provided. The package structure includes a first die, a second die, a first encapsulant, a third die, and a second encapsulant. The first die and the second die laterally aside the first die. The first encapsulant laterally encapsulates the first die and the second die. The third die is electrically connected to the first die and the second die. The second encapsulant is over the first die, the second die and the first encapsulant, laterally encapsulating the third die. The first encapsulant includes a plurality of first fillers, the second encapsulant includes a plurality of second fillers, and a content of the second fillers in the second encapsulant is less than a content of the first fillers in the first encapsulant.

In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed.

Embodiments of the present disclosure relate to methods of fabricating IC devices with IC structures with improved bonding between a semiconductor layer and a non-semiconductor support structure, as well as resulting IC devices, assemblies, and systems. An example method includes providing a semiconductor material over a semiconductor support structure and, subsequently, depositing a first bonding material on the semiconductor material. The method further includes depositing a second bonding material on a non-semiconductor support structure such as glass or mica wafers, followed by bonding the face of the semiconductor material with the first bonding material to the face of the non-semiconductor support structure with the second bonding material. Using first and second bonding materials that include silicon, nitrogen, and oxygen (e.g., silicon oxynitride or carbon-doped silicon oxynitride) may significantly improve bonding between semiconductor layers and non-semiconductor support structures compared to layer transfer techniques.