An electronic device includes a first substrate and a second substrate. A side wall joins the first substrate to the second substrate. The side wall includes a first alloy layer of a first metal and a second metal bonded directly to an upper surface of the first substrate and a second alloy layer of the first metal and a third metal disposed on top of the first alloy layer and bonded directly to a lower surface of the second substrate, the second metal and the third metal being different from each other and from the first metal. An electronic circuit is disposed on the lower surface of the second substrate within a cavity defined by the lower surface of the first substrate, the upper surface of the second substrate, and the side wall.

An electronic device, such as a filter, includes a first substrate having a bottom surface and a top surface, a first side wall of a certain height being formed along a periphery of the bottom surface to surround an electronic circuit disposed on the bottom surface, an external electrode formed on the top surface, the external electrode being connected to the electronic circuit by a via communicating with the bottom surface and a second substrate. The second substrate has a second side wall of a certain height formed along a periphery of a top surface, the second side wall being aligned and bonded with the first side wall to internally form a cavity defined between the bottom surface of the first substrate, the top surface of the second substrate, the first side wall, and the second side wall.

A method of manufacturing an electronic device formed in a cavity may include, on a first substrate having a bottom surface and a top surface, forming a first side wall of a certain height along a periphery on the bottom surface to surround an electronic circuit disposed on the bottom surface; forming a via communicating between the bottom surface and the top surface, forming of the via including stacking a first stop layer and a second stop layer sequentially on a portion of the bottom surface of the first substrate corresponding to the via and etching the first substrate to form a through-hole corresponding to the via, a rate of etching the first substrate being greater than that of the first stop layer and a rate of etching the first stop layer being greater than that of the second stop layer; forming a second side wall of a certain height along a periphery on a top surface of the second substrate; and aligning and bonding the first side wall and the second side wall.

An electronic device includes a first substrate and a second substrate. A side wall joins the first substrate to the second substrate. The side wall includes a first alloy layer of a first metal and a second metal bonded directly to an upper surface of the first substrate and a second alloy layer of the first metal and a third metal disposed on top of the first alloy layer and bonded directly to a lower surface of the second substrate, the second metal and the third metal being different from each other and from the first metal. An electronic circuit is disposed on the lower surface of the second substrate within a cavity defined by the lower surface of the first substrate, the upper surface of the second substrate, and the side wall.

Methods of manufacturing an electronic device formed in a cavity may include providing a first substrate having a first side wall including a first metal formed along a periphery on a bottom surface thereof and surrounding an electronic circuit disposed on the bottom surface, providing a second substrate having a second side wall including a second metal and a third metal formed along a periphery on a top surface thereof, aligning the first substrate with the second substrate with the first side wall opposing and contacting the second side wall to internally define a cavity between the bottom surface of the first substrate, the top surface of the second substrate, the first side wall ,and the second side wall, and heating and bonding the first substrate and the second substrate by transient liquid phase bonding.

The present invention has an object to achieve bonding which satisfies both in heat resistivity and in stress-relaxation ability, and the bonding material according to this invention is a sheet-like bonding material 1 made of a silver-bismuth alloy which, when heated in a state being in contact with a metal material as a bonding target (for example, surface layers 2f, 3f), forms in the metal material (as its material, for example, gold, silver or copper) a diffusion layer Ld2, Ld3 of silver due to solid-phase diffusion reaction, so as to be bonded to the metal material, said bonding material being characterized by containing not less than 1 mass % but not more than 5 mass % of bismuth.

A method of manufacturing an electronic device formed in a cavity may include, on a first substrate having a bottom surface and a top surface, forming a first side wall of a certain height along a periphery on the bottom surface to surround an electronic circuit disposed on the bottom surface; forming a via communicating between the bottom surface and the top surface, forming of the via including stacking a first stop layer and a second stop layer sequentially on a portion of the bottom surface of the first substrate corresponding to the via and etching the first substrate to form a through-hole corresponding to the via, a rate of etching the first substrate being greater than that of the first stop layer and a rate of etching the first stop layer being greater than that of the second stop layer; forming a second side wall of a certain height along a periphery on a top surface of the second substrate; and aligning and bonding the first side wall and the second side wall.

Methods of manufacturing an electronic device formed in a cavity may include providing a first substrate having a first side wall including a first metal formed along a periphery on a bottom surface thereof and surrounding an electronic circuit disposed on the bottom surface, providing a second substrate having a second side wall including a second metal and a third metal formed along a periphery on a top surface thereof, aligning the first substrate with the second substrate with the first side wall opposing and contacting the second side wall to internally define a cavity between the bottom surface of the first substrate, the top surface of the second substrate, the first side wall ,and the second side wall, and heating and bonding the first substrate and the second substrate by transient liquid phase bonding.

Methods of preventing water from penetrating inside a pair of bonded wafers that are bonded to one another during manufacture of an electronic device. A method is provided for manufacturing an electronic device including a first substrate having a first side wall of a certain height formed along a periphery to surround an electronic circuit disposed on a bottom surface and a second substrate having a second side wall of a certain height formed along a periphery on a top surface, the second side wall being aligned and bonded with the first side wall. The method includes forming the first side wall on a bottom surface of a first wafer as the bottom surface of the first substrate and forming a first sealing portion of a certain height along a periphery; forming the second side wall on a top surface of a second wafer as the top surface of the second substrate and forming a second sealing portion of a certain height along a periphery; and aligning and bonding the first wafer and the second wafer with each other, the first sealing portion and the first side wall being bonded with the second sealing portion and the second side wall respectively by transient liquid phase bonding.

An electronic device, such as a filter, includes a first substrate having a bottom surface and a top surface, a first side wall of a certain height being formed along a periphery of the bottom surface to surround an electronic circuit disposed on the bottom surface, an external electrode formed on the top surface, the external electrode being connected to the electronic circuit by a via communicating with the bottom surface and a second substrate. The second substrate has a second side wall of a certain height formed along a periphery of a top surface, the second side wall being aligned and bonded with the first side wall to internally form a cavity defined between the bottom surface of the first substrate, the top surface of the second substrate, the first side wall, and the second side wall.