A bonded structure includes a semiconductor element, an electrical conductor and a sintered metal layer. The semiconductor element has an element obverse surface and an element reverse surface spaced apart from each other in a first direction and includes a reverse-surface electrode on the element reverse surface. The electrical conductor has a mount surface facing in a same direction as the element obverse surface and supports the semiconductor element with the mount surface facing the element reverse surface. The sintered metal layer bonds the semiconductor element to the electrical conductor and electrically connects the reverse-surface electrode and the electrical conductor. The mount surface includes a roughened area roughened by a roughening process. The sintered metal layer is formed on the roughened area.

An integrated circuit device assembly including a graphene-coated heat spreader, including: a substrate; a die coupled to the substrate; and a heat spreader thermally coupled to the die, the heat spreader comprising: a body of thermally conductive metal defining a cavity at least partially surrounding the die; and a graphene layer contacting a surface of the body.

A bonding structure production method for producing a bonding structure (100) includes at least bonding a semiconductor element (30) and a substrate (10) using a silver paste. The substrate (10) includes a die attachment portion (12) to which the semiconductor element (30) is to be bonded. The die attachment portion (12) includes an alumina layer (16) serving as a surface layer on a bonding side of the die attachment portion (12) to which the semiconductor element (30) is to be bonded. The silver paste contains a solvent and silver particles with a residual strain measured by X-ray diffractometry of at least 5.0%. Preferably, the silver particles have a volume-based 50% cumulative diameter of at least 100 nm and no greater than 50 μm.

A semiconductor package includes a pad and leads, the pad and leads including a base metal predominantly including copper, a first plated metal layer predominantly including nickel in contact with the base metal, and a second plated metal layer predominantly including silver in contact with the first plated metal layer. The first plated metal layer has a first plated metal layer thickness of 0.1 to 5 microns, and the second plated metal layer has a second plated metal layer thickness of 0.2 to 5 microns. The semiconductor package further includes an adhesion promotion coating predominantly including silver oxide in contact with the second plated metal layer opposite the first plated metal layer, a semiconductor die mounted on the pad, a wire bond extending between the semiconductor die and a lead of the leads, and a mold compound covering the semiconductor die and the wire bond.

An electronic device includes a substrate, a first pad disposed on the substrate, a second pad disposed opposite to the first pad, and a conductive particle disposed between the first pad and the second pad. The first pad has a recess, and a part of the conductive particle sinks in the recess.

When a semiconductor unit is heated, a heater having a flat heating surface is used for performing heating in a state in which a lower surface of an insulated circuit board is placed on the heating surface. When the semiconductor unit is cooled, a cooler having a cooling surface including a pair of support portions is used for performing cooling in which a lower surface of a pair of outer regions of the insulated circuit board are respectively placed to be contact with the pair of support portions, and in which a central region between the pair of outer regions of the insulated circuit board is pressed downward so as to be downward convex.

A semiconductor element bonding structure capable of strongly bonding a semiconductor element and an object to be bonded and relaxing thermal stress caused by a difference in thermal expansion, by interposing metal particles and Ni between the semiconductor element and the object to be bonded, the metal particles having a lower hardness than Ni and having a micro-sized particle diameter. A plurality of metal particles 5 (aluminum (Al), for example) having a lower hardness than nickel (Ni) and having a micro-sized particle diameter are interposed between a semiconductor chip 3 and a substrate 2 to be bonded to the semiconductor chip 3, and the metal particles 5 are fixedly bonded by the nickel (Ni). Optionally, aluminum (Al) or an aluminum alloy (Al alloy) is used as the metal particles 5, and aluminum (Al) or an aluminum alloy (Al alloy) is used on the surface of the semiconductor chip 3 and/or the surface of the substrate 2.

An electronic device includes a substrate, a first pad disposed on the substrate and having a first conductive layer and a second conductive layer disposed on the first conductive layer, a first insulating layer disposed on the first conductive layer and having at least one opening exposing a portion of the first conductive layer, and a second pad disposed opposite to the first pad. The second conductive layer is disposed on the first conductive layer in the at least one opening and extends over the at least one opening to be disposed on a portion of the insulating layer. A bottom of the least one opening of the first insulating layer has an arc edge in a top view of the electronic device.

An electronic device includes a first metal plate including a first wiring and a second wiring, an electronic component mounted on a lower surface of the first wiring so as to overlap the second wiring in plan view, a second metal plate including an electrode electrically connected to the lower surface of the first wiring, and an insulation layer filling a space between the first metal plate, the second metal plate, and the electronic component and covering the electronic component. The upper surface of the second wiring is exposed from the insulation layer.

A member for semiconductor device includes a metal portion configured to be bonded to another member by solder, and a treated coating covering a surface of the metal portion, the treated coating including a treatment agent. The treated coating vaporizes at a temperature lower than or equal to a solidus temperature of the solder.