A support substrate includes an insulating core layer, an electrically conductive layer over the insulating core layer and a solder mask layer over the electrically conductive layer. A back side of an integrated circuit chip is mounted to an upper surface of the support substrate at a die attach location. The upper surface of the support substrate includes a cavity located within the die attach location, where the cavity extends under the back side of the integrated circuit chip. The cavity is defined by an area where the solder mask layer and at least a portion of the electrically conductive layer have been removed. Bonding wires connect connection pads on a front side of the integrated circuit chip to connection pad on the upper surface of the support substrate.

A power semiconductor module includes a substrate with a metallization layer that is structured. A semiconductor chip having a first side bonded to the metallization layer. A metal clip, which is a strip of metal, has a first planar part bonded to a second side of the semiconductor chip opposite to the first side. The metal clip also has a second planar part bonded to the metallization layer. A mold encapsulation at least partially encloses the substrate and the metal clip. The mold encapsulation has a recess approaching towards the first planar part of the metal clip. The semiconductor chip is completely enclosed by the mold encapsulation, the substrate and the metal clip and the first planar part of the metal clip is at least partially exposed by the recess. A sensor is accommodated in the recess.

A power semiconductor module includes a substrate with a metallization layer that is structured. A semiconductor chip having a first side bonded to the metallization layer. A metal clip, which is a strip of metal, has a first planar part bonded to a second side of the semiconductor chip opposite to the first side. The metal clip also has a second planar part bonded to the metallization layer. A mold encapsulation at least partially encloses the substrate and the metal clip. The mold encapsulation has a recess approaching towards the first planar part of the metal clip. The semiconductor chip is completely enclosed by the mold encapsulation, the substrate and the metal clip and the first planar part of the metal clip is at least partially exposed by the recess. A sensor is accommodated in the recess.

An electronic circuit device according to the present invention includes a base substrate including a wiring layer having a connection part, at least one electronic circuit element, and a re-distribution layer including a photosensitive resin layer, the photosensitive resin layer enclosing a surface on which a connection part of the electronic circuit element is formed and a side surface of the electronic circuit element and embedding a first wiring photo via, a second wiring photo via and a wiring, the first wiring photo via directly connected to the connection part of the electronic circuit element, the second wiring photo via arranged at the outer periphery of the electronic circuit element and directly connected to a connection part of the wiring layer, the wiring electrically connected to the first wiring photo via and the second wiring photo via on a same surface.

In accordance with an embodiment, an electronic circuit includes a first transistor device, at least one second transistor device, and a drive circuit. The first transistor device is integrated in a first semiconductor body, and includes a first load pad at a first surface of the first semiconductor body and a control pad and a second load pad at a second surface of the first semiconductor body. The at least one second transistor device is integrated in a second semiconductor body, and includes a first load pad at a first surface of the second semiconductor body and a control pad and a second load pad at a second surface of the second semiconductor body. The first load pad of the first transistor device and the first load pad of the at least one second transistor device are mounted to an electrically conducting carrier.

In accordance with an embodiment, an electronic circuit includes a first transistor device, at least one second transistor device, and a drive circuit. The first transistor device is integrated in a first semiconductor body, and includes a first load pad at a first surface of the first semiconductor body and a control pad and a second load pad at a second surface of the first semiconductor body. The at least one second transistor device is integrated in a second semiconductor body, and includes a first load pad at a first surface of the second semiconductor body and a control pad and a second load pad at a second surface of the second semiconductor body. The first load pad of the first transistor device and the first load pad of the at least one second transistor device are mounted to an electrically conducting carrier.

A semiconductor package that includes a conductive can, a power semiconductor device electrically and mechanically attached to the inside surface of the can, and an IC semiconductor device copackaged with the power semiconductor device inside the can.

A semiconductor package that includes a conductive can, a power semiconductor device electrically and mechanically attached to the inside surface of the can, and an IC semiconductor device copackaged with the power semiconductor device inside the can.

A semiconductor chip package includes a substrate having a top surface and a bottom surface, and a semiconductor device mounted on the top surface of the substrate. A gap is provided between the semiconductor device and the top surface of the substrate. A multi-layer laminate epoxy sheet is disposed on the top surface of the substrate and around a perimeter of the semiconductor device.

A power module includes a plurality of conductive wire groups and a sealing member. The plurality of conductive wire groups each include a first bonded portion and a second bonded portion. A maximum gap between intermediate portions of a pair of conductive wire groups adjacent to each other is larger than a first gap between the first bonded portions of the pair of conductive wire groups adjacent to each other. The maximum gap between the intermediate portions of the pair of conductive wire groups adjacent to each other is larger than a second gap between the second bonded portions of the pair of conductive wire groups adjacent to each other. Therefore, the power module is improved in reliability.