Implementations of semiconductor packages may include: a first substrate having two or more die coupled to a first side, a clip coupled to each of the two or more die on the first substrate and a second substrate having two or more die coupled to a first side of the second substrate. A clip may be coupled to each of the two or more die on the second substrate. The package may include two or more spacers coupled to the first side of the first substrate and a lead frame between the first substrate and the second substrate and a molding compound. A second side of each of the first substrate and the second substrate may be exposed through the molding compound. A perimeter of the first substrate and a perimeter of the second substrate may not fully overlap when coupled through the two or more spacers.

A semiconductor module including a cooling apparatus and a semiconductor device mounted on the cooling apparatus is provided. The cooling apparatus includes a cooling fin arranged below the semiconductor device, a main-body portion flow channel through which a coolant flows in a predetermined direction to cool the cooling fin, a first coolant flow channel that is connected to one side of the main-body portion flow channel and has a first inclined portion upwardly inclined toward the main-body portion flow channel, and a conveying channel that, when seen from above, lets the coolant into the first coolant flow channel from a direction perpendicular to the predetermined direction or lets the coolant out of the first coolant flow channel in the direction perpendicular to the predetermined direction.

A semiconductor device includes a chip that includes a mounting surface, a non-mounting surface, and a side wall connecting the mounting surface and the non-mounting surface and has an eaves portion protruding further outward than the mounting surface at the side wall and a metal layer that covers the mounting surface.

A semiconductor device includes a chip that includes a mounting surface, a non-mounting surface, and a side wall connecting the mounting surface and the non-mounting surface and has an eaves portion protruding further outward than the mounting surface at the side wall and a metal layer that covers the mounting surface.

Provided is a semiconductor module, including: a semiconductor chip including a semiconductor substrate and a metal electrode provided above the semiconductor substrate; a protective film provided above the metal electrode; a plated layer provided above the metal electrode, having at least a part being in a height identical to the protective film; a solder layer provided above the plated layer; and a lead frame provided above the solder layer, wherein the plated layer is provided in a range not in contact with the protective film.

Provided is a semiconductor module, including: a semiconductor chip including a semiconductor substrate and a metal electrode provided above the semiconductor substrate; a protective film provided above the metal electrode; a plated layer provided above the metal electrode, having at least a part being in a height identical to the protective film; a solder layer provided above the plated layer; and a lead frame provided above the solder layer, wherein the plated layer is provided in a range not in contact with the protective film.

A semiconductor device includes an insulating substrate, a first and a second obverse-surface metal layers disposed on an obverse surface of the insulating substrate, a first and a second reverse-surface metal layers disposed on a reverse surface of the insulating substrate, a first conductive layer and a first semiconductor element disposed on the first obverse-surface metal layer, and a second conductive layer and a second semiconductor element disposed on the second obverse-surface metal layer. Each of the first conductive layer and the second conductive layer has an anisotropic coefficient of linear expansion and is arranged such that the direction in which the coefficient of linear expansion is relatively large is along a predetermined direction perpendicular to the thickness direction of the insulating substrate. The first and second reverse-surface metal layers are smaller than the first and second obverse-surface metal layers in dimension in the predetermined direction.

A connecting strip of conductive elastic material having an arched shape having a concave side and a convex side. The connecting strip is fixed at the ends to a support carrying a die with the convex side facing the support. During bonding, the connecting strip undergoes elastic deformation and presses against the die, thus electrically connecting the at least one die to the support.

A semiconductor device includes: a semiconductor element that includes an element main body having an element main surface and an element back surface facing opposite sides to each other in a thickness direction, and a first electrode arranged on the element main surface; an insulator that has an annular shape overlapping an outer peripheral edge of the first electrode when viewed in the thickness direction and is arranged over the first electrode and the element main surface; a first metal layer arranged over the first electrode and the insulator; and a second metal layer laminated on the first metal layer and overlapping both the first electrode and the insulator when viewed in the thickness direction.

A semiconductor device includes: a semiconductor element that includes an element main body having an element main surface and an element back surface facing opposite sides to each other in a thickness direction, and a first electrode arranged on the element main surface; an insulator that has an annular shape overlapping an outer peripheral edge of the first electrode when viewed in the thickness direction and is arranged over the first electrode and the element main surface; a first metal layer arranged over the first electrode and the insulator; and a second metal layer laminated on the first metal layer and overlapping both the first electrode and the insulator when viewed in the thickness direction.