Patent classifications
H
ELECTRICITY
Load children
H01
ELECTRIC ELEMENTS
Load children
H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
Load children
2224/00
Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/80
Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/8485
using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/84855
Hardening the adhesive by curing, i.e. thermosetting
Load children Filter patents View analytics View as hierarchy Open in page
H01L2224/84874
Ultraviolet [UV] curing
Filter patents View analytics View as hierarchy Open in page

H01L2224/84874

Multi-step high aspect ratio vertical interconnect and method of making the same
11664321 · 2023-05-30 · ·

A multi-step conductive interconnect (MSI) may comprise a first step of the MSI comprising a first end and a second end opposite the first end, a first height (Ha) and a first diameter (Da). A second step of the MSI may comprise a first end and a second end opposite the first end. The first end of the second step contacts the second end of the first step. The second step may comprise a second height (Hb) and a second diameter (Db). The MSI may comprise a height (H) and a height to width aspect ratio (H:Da) greater than or equal to 1.5:1. A sidewall of the first step may comprise an offset (O) with respect to a sidewall of the second step to form a disjointed sidewall profile. The offset O may be in a range of 0.1 μm-20 μm.

MULTI-STEP HIGH ASPECT RATIO VERTICAL INTERCONNECT AND METHOD OF MAKING THE SAME
20220246532 · 2022-08-04 ·

A multi-step conductive interconnect (MSI) may comprise a first step of the MSI comprising a first end and a second end opposite the first end, a first height (Ha) and a first diameter (Da). A second step of the MSI may comprise a first end and a second end opposite the first end. The first end of the second step contacts the second end of the first step. The second step may comprise a second height (Hb) and a second diameter (Db). The MSI may comprise a height (H) and a height to width aspect ratio (H:Da) greater than or equal to 1.5:1. A sidewall of the first step may comprise an offset (O) with respect to a sidewall of the second step to form a disjointed sidewall profile. The offset O may be in a range of 0.1 μm-20 μm.