A semiconductor device having a leadframe including a pad (101) surrounded by elongated leads (110) spaced from the pad by a gap (113) and extending to a frame, the pad and the leads having a first thickness (115) and a first and an opposite and parallel second surface; the leads having a first portion (112) of first thickness near the gap and a second portion (111) of first thickness near the frame, and a zone (114) of reduced second thickness (116) between the first and second portions; the second surface (112a) of the first lead portions is coplanar with the second surface (111a) of the second portions. A semiconductor chip (220) with a terminal is attached the pad. A metallic wire connection (230) from the terminal to an adjacent lead includes a stitch bond (232) attached to the first surface of the lead.

A semiconductor package includes a pad and leads having a planar profile shaped from a planar base metal, a semiconductor die attached to the pad, a wire bond extending from the semiconductor die to a respective lead, and mold compound covering the semiconductor die, the wire bond, and a first portion of the respective lead, wherein a second portion of the respective lead extends beyond the mold compound. A shape of the respective lead within the planar profile includes a notch indented relative to a first elongated side of the shape of the respective lead and a protrusion protruding outwardly relative to a second elongated side of the shape of the respective lead. The notch and the protrusion are each partially covered by the mold compound and partially outside the mold compound.

A semiconductor package includes a pad and leads having a planar profile shaped from a planar base metal, a semiconductor die attached to the pad, a wire bond extending from the semiconductor die to a respective lead, and mold compound covering the semiconductor die, the wire bond, and a first portion of the respective lead, wherein a second portion of the respective lead extends beyond the mold compound. A shape of the respective lead within the planar profile includes a notch indented relative to a first elongated side of the shape of the respective lead and a protrusion protruding outwardly relative to a second elongated side of the shape of the respective lead. The notch and the protrusion are each partially covered by the mold compound and partially outside the mold compound.

An example semiconductor package comprises a semiconductor die having a top surface, a bond pad formed on the top surface, a bond wire having a first end and a second end, wherein the first end is attached to the bond pad. The semiconductor package having a contact pad, wherein the second end of the wire bond is attached to the contact pad by a stitch bond, the stitch bond having a plateau region formed between a cut end and a ramped portion, wherein a bottom surface of the plateau region forms an attachment to the contact pad.

Described examples include a packaged device including a first object and a second object spaced from each other by a gap, each object having a first surface and an opposite second surface, the first surfaces of the first object and the second object including first terminals. A structure includes at least two conductors embedded in a dielectric casing consolidating a configuration and organization of the at least two conductors, the at least two conductors having end portions un-embedded by the dielectric casing. An end portion of at least one of the at least two conductors is electrically connected to a first terminal of the first object, and an opposite end portion of the at least one of the at least two conductors is electrically connected to a respective first terminal of the second object, the at least two conductors electrically connecting the first object and the second object.

A semiconductor device having a leadframe including a pad (101) surrounded by elongated leads (110) spaced from the pad by a gap (113) and extending to a frame, the pad and the leads having a first thickness (115) and a first and an opposite and parallel second surface; the leads having a first portion (112) of first thickness near the gap and a second portion (111) of first thickness near the frame, and a zone (114) of reduced second thickness (116) between the first and second portions; the second surface (112a) of the first lead portions is coplanar with the second surface (111a) of the second portions. A semiconductor chip (220) with a terminal is attached the pad. A metallic wire connection (230) from the terminal to an adjacent lead includes a stitch bond (232) attached to the first surface of the lead.

An example semiconductor device package includes: a semiconductor die having a backside surface mounted to a die pad of a leadframe using a die attach film that includes polymer particles, the leadframe having leads spaced from the die pad; wire bonds coupling bond pads on a device side surface of the semiconductor die that is opposite the backside surface to the leads of the leadframe; and mold compound covering the semiconductor die, the wire bonds, and portions of the leads of the leadframe, with additional portions of the leads of the leadframe exposed from the mold compound to form terminals; wherein the semiconductor die has vertical sides extending from the backside surface to the device side surface that have a scalloped pattern.