Patent classifications
H01L2224/85203
INTEGRATED CIRCUIT DIE PAD CAVITY
An integrated circuit and method of making an integrated circuit is provided. The integrated circuit includes an electrically conductive pad having a generally planar top surface that includes a cavity having a bottom surface and sidewalls extending from the bottom surface of the cavity to the top surface of the pad. An electronic device is attached to the top surface of the electrically conductive pad. A wire bond is attached from the electronic device to the bottom surface of the cavity. A molding compound encapsulates the electronic device.
BONDING WIRE FOR SEMICONDUCTOR DEVICES
There is provided a novel Cu bonding wire that achieves a favorable FAB shape and reduces a galvanic corrosion in a high-temperature environment to achieve a favorable bond reliability of the 2nd bonding part. The bonding wire for semiconductor devices includes a core material of Cu or Cu alloy, and a coating layer having a total concentration of Pd and Ni of 90 atomic % or more formed on a surface of the core material. The bonding wire is characterized in that: in a concentration profile in a depth direction of the wire obtained by performing measurement using Auger electron spectroscopy (AES) so that the number of measurement points in the depth direction is 50 or more for the coating layer, a thickness of the coating layer is 10 nm or more and 130 nm or less, an average value X is 0.2 or more and 35.0 or less where X is defined as an average value of a ratio of a Pd concentration C.sub.Pd (atomic %) to an Ni concentration C.sub.Ni (atomic %), C.sub.Pd/C.sub.Ni, for all measurement points in the coating layer, and the total number of measurement points in the coating layer whose absolute deviation from the average value X is 0.3X or less is 50% or more relative to the total number of measurement points in the coating layer.
Electronic package for integrated circuits and related methods
Electronic packages and related methods are disclosed. An example electronic package apparatus includes a substrate and an electronic component. A protective material is positioned on a first surface, a second surface and all side surfaces of the electronic component to encase the electronic component. An enclosure is coupled to the substrate to cover the protective material and the electronic component.
SEMICONDUCTOR PACKAGE
A semiconductor package is provided. The semiconductor package includes: a package substrate; a first semiconductor chip mounted on the package substrate; a second semiconductor chip mounted on the package substrate; an adhesive film provided on an upper surface the first semiconductor chip and an upper surface of the second semiconductor chip; and a third semiconductor chip attached to the first semiconductor chip, the second semiconductor chip by the adhesive film. The first and second semiconductor chips have different heights, and a thickness of the adhesive film at a portion thereof contacting the first semiconductor chip is different from a thickness of the adhesive film at a portion thereof contacting the second semiconductor chip.
Wire bonding method for semiconductor package
A wire bonding method includes bonding a tip of a wire provided through a clamp and a capillary onto a bonding pad of a chip, moving the capillary to a connection pad of a substrate corresponding to the bonding pad, bonding the wire to the connection pad to form a bonding wire connecting the bonding pad to the connection pad, before the capillary is raised from the connection pad, applying a electrical signal to the wire to detect whether the wire and the connection pad are in contact with each other, changing a state of the clamp to a closed state when the wire is not in contact with the connection pad and maintaining the state of the clamp in an open state when the wire is in contact with the connection pad, and raising the capillary from the connection pad while maintaining the state of the clamp.
DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE
A display device including a display panel including a first panel pad, a first circuit board including a first pad spaced from the first panel pad and a coating member on the first pad, and a wire connecting the first panel pad and the first pad to each other. The coating member includes a same material as the wire and integrally connected to the wire.
WIRE BONDING TOOL
A wire bonding tool includes a tool body with a tubular cavity extending through the tool body and a distal end. The distal end includes a flared opening at an end of the tubular cavity. The tool body further includes at least one protrusion at a level of the distal end.
DOUBLE-SIDE COOLING-TYPE SEMICONDUCTOR DEVICE
A double-side cooling-type semiconductor device includes a first circuit board and a second circuit board, a semiconductor element bonded to a control electrode of the first circuit board, a first spacer disposed between the first circuit board and the semiconductor element, bonded to the first circuit board, and bonded to the semiconductor element, and a second spacer disposed between the second circuit board and the semiconductor element, bonded to the second circuit board, and bonded to the semiconductor element.
DOUBLE-SIDE COOLING-TYPE SEMICONDUCTOR DEVICE
A double-side cooling-type semiconductor device includes a first circuit board and a second circuit board, a semiconductor element bonded to a control electrode of the first circuit board, a first spacer disposed between the first circuit board and the semiconductor element, bonded to the first circuit board, and bonded to the semiconductor element, and a second spacer disposed between the second circuit board and the semiconductor element, bonded to the second circuit board, and bonded to the semiconductor element.
TRANSISTOR DEVICE STRUCTURE WITH ANGLED WIRE BONDS
A transistor device includes a substrate, a gate contact pad on the substrate, and a transistor die on the substrate adjacent the gate contact pad. The transistor die includes an active region and a gate bond pad adjacent the active region, and the gate bond pad has a side edge adjacent the active region that extends in a first direction. The transistor device includes a bonding wire bonded to the gate contact pad at a first end of the bonding wire and to the gate bond pad at a second end of the bonding wire. The bonding wire extends in a second direction that is oblique to the first direction such that the bonding wire forms an angle relative to the first direction that is less than 90 degrees.