Provided is a semiconductor module including a main circuit portion, a plurality of circuit electrodes, a plurality of main terminals, and a plurality of wires, in each of semiconductor chips, transistor portions and diode portions have a longitudinal side in a second direction, each of semiconductor chips has a plurality of end sides including a gate-side end side, each of the gate-side end sides is arranged facing a same side in a top view, the plurality of main terminals are arranged on a same side in relation to the main circuit portion so as not to sandwich the main circuit portion in a top view, each of the plurality of wires has a bonding portion, and a longitudinal direction of the bonding portion has an angle in relation to the second direction.

A semiconductor device according to one aspect includes a pad portion, an insulating layer that supports the pad portion, a first wiring layer that is formed in a layer below the pad portion and extends in a first direction below the pad portion, and a conductive member that is joined to a front surface of the pad portion and extends in a direction forming an angle of -30° to 30° with respect to the first direction. A semiconductor device according to another aspect includes a pad portion, an insulating layer that supports the pad portion, a first wiring layer that is formed in a layer below the pad portion and extends in a first direction below the pad portion, and a conductive member that is joined to a front surface of the pad portion and has a joint portion that is long in one direction in plan view and an angle of a long direction of the joint portion with respect to the first direction is -30° to 30°.

In a semiconductor device, a first structure including a first uneven unit and a second structure covering the first structure and including a second uneven unit are formed in a bonding region defined in a semiconductor substrate. Metal wiring is joined to the second uneven unit in the second structure. A depth of a recess in the second uneven unit is shallower than a depth of a recess in the first uneven unit. An insulating member defining the bonding region is formed so as to reach the semiconductor substrate.

A silicon carbide substrate has a first main surface and a second main surface opposite to the first main surface. The first main surface is provided with a gate trench having a side surface and a bottom surface contiguous to the side surface. The gate insulating film is in contact with each of the side surface and the bottom surface. The gate electrode is provided on the gate insulating film. The separation insulating film is provided on the gate electrode. The first electrode is provided on the separation insulating film. The second electrode is provided on the second main surface. The separation insulating film electrically separates the gate electrode and the first electrode from each other. Each of the gate insulating film, the gate electrode, and the separation insulating film, and a portion of the first electrode are provided in the gate trench.

Provided is a wire bonding method capable of suppressing the occurrence of wire breakage. One aspect of the present invention provides a wire bonding method for bringing a capillary and a wire 1 inserted through the capillary into pressure contact with a second bonding point 16 of a lead placed on an XY stage to bond the wire to the lead, including moving the XY stage in a state in which the capillary is in pressure contact with the lead to move the capillary along a movement locus including a plurality of arc portions.

It is an object to enable a non-destructive inspection of reliability of a bonding part and enabling an accurate inspection. A wedge tool includes: a groove which is formed along a direction of an ultrasonic vibration in a tip portion and in which a bonding wire is disposed in a wedge bonding; a first planar surface and a second planar surface disposed on both sides of the groove; and at least one convex portion formed away from the groove in at least one of the first planar surface and the second planar surface, wherein the bonding wire comes in contact with the convex portion by a deformation of the bonding wire in a bonding part of the bonding wire and a bonded object bonded to each other by a wedge bonding.

A wire bonding method includes bringing a capillary and a wire inserted through the capillary into pressure contact with a bonding point of a lead placed on an XY stage to bond the wire to the lead, including moving the XY stage in a state in which the capillary is in pressure contact with the lead to move the capillary along a movement locus including a plurality of arc portions.

The present invention includes: an ultrasonic horn (14) to which two ultrasonic vibrations can be input to excite a capillary (15) mounted to a front end with different frequencies in a Y-direction and an X-direction; and a control unit (50) which adjusts the respective magnitude of the two ultrasonic vibrations. The Y-direction is a direction in which the ultrasonic horn (14) extends. The control unit (50) adjusts the respective magnitude of the two ultrasonic vibrations to adjust a ratio (ΔY/ΔX) of amplitude of the capillary (15) in the Y-direction and the X-direction. Thus, degradation in the quality of the joining between wires and leads is suppressed.

According to one aspect, a semiconductor device includes: a buffer layer disposed on a front surface of a second semiconductor layer, and having at least one opening in plan view; and an electrode disposed over the second semiconductor layer and the buffer layer, and being in contact with the second semiconductor layer through the at least one opening, wherein the buffer layer has a higher Vickers hardness than the electrode, and a width w of each of the at least one opening satisfies w<W.sub.th, where s is a thickness of the buffer layer, t is a thickness of the electrode, and W.sub.th=2×(s×t−s.sup.2).sup.0.5 holds true.

A method of manufacturing a semiconductor device includes: forming a base portion of a bonding pad on a semiconductor portion, the base portion further comprising a base layer; forming a main surface of the bonding pad, the main surface comprising a bonding region; bonding a bond wire or clip to the bonding region; and forming a supplemental structure directly on the base portion. The supplemental structure laterally adjoins the bond wire or clip or is laterally spaced apart from the bond wire or clip. A volume-related specific heat capacity of the supplemental structure is higher than a volume-related specific heat capacity of the base layer.