A method of forming a semiconductor device includes attaching a semiconductor die to a flag of a leadframe and forming a conductive connector over a portion of the semiconductor die and a portion of the flag. A conductive connection between a first bond pad of the semiconductor die and the flag is formed by way of the conductive connector. A second bond pad of the semiconductor die is connected to a conductive lead of the plurality by way of a bond wire.

A semiconductor device including a first structure including a first conductive pattern, the first conductive pattern exposed on an upper portion of the first structure, a mold layer covering the first conductive pattern, a second structure on the mold layer, and a through via penetrating the second structure and the mold layer, the through via electrically connected to the first conductive pattern, the through via including a first via segment in the second structure and a second via segment in the mold layer, the second via segment connected to the first via segment, an upper portion of the second via segment having a first width and a middle portion of the second via segment having a second width greater than the first width may be provided.

A semiconductor-based imaging device and method of manufacture. A direct bond hybridization (DBH) structure is formed on a top surface of a read out integrated circuit (ROIC). A silicon-based detector is bonded to the ROIC via the DBH structure. A non-silicon-based detector is bonded to the DBH structure located on the top of the ROIC using indium-based hybridization.

A semiconductor device including a first structure including a first conductive pattern, the first conductive pattern exposed on an upper portion of the first structure, a mold layer covering the first conductive pattern, a second structure on the mold layer, and a through via penetrating the second structure and the mold layer, the through via electrically connected to the first conductive pattern, the through via including a first via segment in the second structure and a second via segment in the mold layer, the second via segment connected to the first via segment, an upper portion of the second via segment having a first width and a middle portion of the second via segment having a second width greater than the first width may be provided.

The present disclosure provides a chip packaging structure and method, using a back-to-back packaging structure, and realizing electrical connection between chips through TSV holes or cooperation between TSV and TMV holes, completely penetrating two chips. Thus, the TSV hole passing through a silicon material may not need to be formed in advance on the chips before bonding the chips, thereby the requirement of alignment accuracy of the chips can be reduced, and the process difficulty can be reduced. In addition, as the back-to-back packaging process is adopted, the heat dissipation efficiency of the chips can be improved, and the problem of circuit breakage due to materials with different expansion coefficients present between the chips can be avoided.

A semiconductor-based imaging device and method of manufacture. A direct bond hybridization (DBH) structure is formed on a top surface of a read out integrated circuit (ROIC). A silicon-based detector is bonded to the ROIC via the DBH structure. A non-silicon-based detector is bonded to the DBH structure located on the top of the ROIC using indium-based hybridization.

A semiconductor device includes a die stack and an encapsulant covering the die stack. The die stack includes a first die and a second die stacked upon one another, a bonding dielectric layer, and a through die via providing a vertical connection in the die stack. The first die includes a first substrate and a first conductive pad on the first substrate, and the second die includes a second substrate and a second conductive pad on the second substrate. The bonding dielectric layer interposed between the first substrate and the second substrate is in physical contact with at least one selected from the group of the first conductive pad and the second conductive pad. The through die via extends through the first conductive pad and the bonding dielectric layer and lands on the second pad.

A semiconductor device package includes a semiconductor device, a non-semiconductor substrate over the semiconductor device, and a first connection element extending from the semiconductor device to the non-semiconductor substrate and electrically connecting the semiconductor device to the non-semiconductor substrate.

Curable material layer is coated on surface of first die. First die includes first substrate and first contact pad. Second die is bonded to first die. Second die includes second substrate and second contact pad. Second contact pad is located on second substrate, at an active surface of second die. Bonding the second die to the first die includes disposing second die with the active surface closer to the curable material layer and curing the curable material layer. A through die hole is etched in the second substrate from a backside surface of the second substrate opposite to the active surface. The through die hole further extends through the cured material layer, is encircled by the second contact pad, and exposes the first contact pad. A conductive material is disposed in the through die hole. The conductive material electrically connects the first contact pad to the second contact pad.

A semiconductor-based imaging device and method of manufacture. A direct bond hybridization (DBH) structure is formed on a top surface of a read out integrated circuit (ROIC). A silicon-based detector is bonded to the ROIC via the DBH structure. A non-silicon-based detector is bonded to the DBH structure located on the top of the ROIC using indium-based hybridization.