A display device includes a substrate including a display area and a non-display area, and a first surface and a second surface; pixels disposed on the first surface; a signal line disposed on the first surface, and electrically connected to each pixel; a cushion layer disposed on the pixels and the signal line, and including at least one contact hole that exposes a portion of the signal line; a connector disposed in the at least one contact hole and electrically connected to the signal line; and a driver disposed on the cushion layer and electrically connected to the pixels through the connector. Each pixel includes a display element layer disposed on the first surface and including at least one light emitting element, and a pixel circuit layer disposed on the display element layer and including at least one transistor electrically connected to the at least one light emitting element.

A fan-out packaging method includes: prepare circuit patterns on one side or both sides of a substrate; install electronic parts on one side or both sides of the substrate; prepare packaging layers on both sides of the substrate; the packaging layers on both sides of the substrate package the substrate, the circuit patterns, and the electronic parts, the packaging layers being made of a thermal-plastic material; wherein the substrate is provided with a via hole; both sides of the substrate are communicated by means of the via hole; a part of the packaging layers penetrate through the via hole when the packaging layers are prepared on both sides of the substrate; and the packaging layers on both sides of the substrate are connected by means of the via hole.

A method for contacting and rewiring an electronic component embedded in a PCB in the following manner is disclosed. A first permanent resist layer is applied to one contact side of the PCB. The first permanent resist layer is structured to produce exposures in the area of contacts of the electronic component. A second permanent resist layer is applied onto the structured first permanent resist layer. The second permanent resist layer is structured to expose the exposures in the area of the contacts and to produce exposures in line with the desired conductor tracks. The exposures are chemically coated with copper the copper is electric-plated to the exposures. Excess copper in the areas between the exposures is removed.

This publication discloses an electronic module, comprising a first conductive pattern layer and a first insulating-material layer on at least one surface of the first conductive pattern layer, at least one opening in the first insulating-material layer that extends through the first insulating-material layer, a component having a contact surface with contact terminals, the component being arranged at least partially within the opening with its contact terminals electrically coupled to the first conductive pattern layer, a second insulating-material layer provided on the first insulating-material layer, and a conductive pattern embedded between the first and second insulating material layers. This publication additionally discloses a method for manufacturing an electronic module.

A method may include forming a first atomic layer deposition (ALD) bonding layer on a surface of a first semiconductor device, and forming a second ALD bonding layer on a surface of a second semiconductor device. The method may include joining the first semiconductor device and the second semiconductor device via the first ALD bonding layer and the second ALD bonding layer. The method may include performing an annealing operation to fuse the first ALD bonding layer and the second ALD bonding layer and form a single ALD bonding layer that bonds the first semiconductor device with the second semiconductor device.

A method of forming a package structure includes: forming an inductor comprising a through-via over a carrier; placing a semiconductor device over the carrier; molding the semiconductor device and the through-via in a molding material; and forming a first redistribution layer on the molding material, wherein the inductor and the semiconductor device are electrically connected by the first redistribution layer.

The present disclosure provides a package structure of an air gap type semiconductor device and its fabrication method. The fabrication method includes forming a bonding layer having a first opening on a carrier; disposing a semiconductor chip on the bonding layer, thereby forming a first cavity at the first opening, where the first cavity is at least aligned with a portion of an active region of the semiconductor chip; performing an encapsulation process to encapsulate the semiconductor chip on the carrier; lastly, forming through holes passing through the carrier where each through hole is aligned with a corresponding input/output electrode region of the semiconductor chip, and forming interconnection structures on a side of the carrier different from a side with the bonding layer, where each interconnection structure passes through a corresponding through hole and is electrically connected to an corresponding input/output electrode.

A semiconductor package may include a redistribution substrate including first and second surfaces opposite each other, a first semiconductor chip on the first surface, a first molding portion on a side surface of the first semiconductor chip, a second semiconductor chip between the first semiconductor chip and the redistribution substrate, a second molding portion between the redistribution substrate and the first molding portion and on a side surface of the second semiconductor chip, bump patterns between the second semiconductor chip and the redistribution substrate, and a mold via penetrating the second molding portion and electrically connecting the first semiconductor chip to the redistribution substrate. The redistribution substrate may include first and second redistribution patterns sequentially in an insulating layer. The mold via may contact the second redistribution pattern, and the bump patterns may contact the first redistribution pattern.

A system in package includes a memory-die stack in memory module that is stacked vertically with respect to a processor die. Each memory die in the memory-die stack includes a vertical bond wire that emerges from a matrix for connection. Some configurations include the vertical bond wire emerging orthogonally beginning from a bond-wire pad. The matrix encloses the memory-die stack, the spacer, and at least a portion of the processor die.

A semiconductor package includes a semiconductor device, an encapsulating material, and a redistribution structure. The semiconductor device includes a chamfer disposed on one of a plurality of side surfaces of the semiconductor device. The encapsulating material encapsulates the semiconductor device. The redistribution structure is disposed over the encapsulating material and electrically connected to the semiconductor device.