A light-emitting element including: a first semiconductor layer doped with a first type of dopant; a second semiconductor layer doped with a second type of dopant that is different from the first type of dopant; and an active layer between the first semiconductor layer and the second semiconductor layer, wherein a length of the light-emitting element measured in a first direction, which may be a direction in which the first semiconductor layer, the active layer, and the second semiconductor layer may be arranged, may be shorter than the width measured in a second direction that is perpendicular to the first direction.

A display device according to an embodiment includes a pixel and a bank. The pixel includes sub-pixels and an emission area including sub-emission areas corresponding to the sub-pixels. The bank surrounds the emission area. The pixel includes electrodes disposed in each of the sub-emission areas, at least one light emitting element disposed in each of the sub-emission areas, and bank patterns disposed under the electrodes, the bank patterns overlapping a portion of the electrodes. The bank patterns include a first bank pattern including a first valley, the first bank pattern being disposed in a first edge area of the emission area in a first direction. The bank patterns include a second bank pattern including a second valley, the second bank pattern being disposed in a second edge area of the emission area in the first direction.

A display device and a method of fabricating a display device are provided. A display device includes: a first electrode and a second electrode on a substrate and spaced apart from each other; a third electrode on the substrate; and a first light emitting element between the first electrode and the second electrode. The first electrode, the second electrode, and the third electrode may be arranged on a same layer. The third electrode may be electrically separated from the first electrode and the second electrode.

A light emitting element includes: a first semiconductor layer doped with a first polarity; a second semiconductor layer doped with a second polarity different from the first polarity; an active layer between the first semiconductor layer and the second semiconductor layer in a first direction; and an insulating film surrounding an outer surface of at least the active layer and extending in the first direction. A thickness of a first portion of the insulating film surrounding the active layer is in a range of 10% to 16% of a diameter of the active layer.

A display panel manufacturing apparatus and a display panel manufacturing method are provided. A display panel manufacturing apparatus manufactures a display panel which is on a lower stage and includes light emitting elements. The display panel manufacturing apparatus includes: a power supply for supplying an alignment voltage for aligning the light emitting elements on the display panel; and an upper stage including a probe unit to provide the alignment voltage to the display panel and magnetic sensors to sense an alignment state of the light emitting elements.

A method of manufacturing display device is disclosed. A substrate includes a basal layer and metal contacts on the top surface. An insulation layer is disposed on the top surface and includes a first mounting surface and a bottom surface. Multiple grooves are formed on the insulation layer and each extends from the first mounting surface to the bottom surface. The grooves respectively correspond to the metal contacts and expose respective metal contacts. An electromagnetic force is provided with a direction from the basal layer toward the insulation layer. A droplet containing multiple micro components is provided on the first mounting surface. A configuration of an electrode of the micro component corresponds to a configuration of one of the grooves. The electrode is attracted to the corresponding groove by the electromagnetic force so as to electrically contact the metal contact.

A display device includes first and second electrodes disposed on a substrate, the first and second electrodes extending in a direction and being parallel to each other, a first insulating layer disposed on the first and second electrodes, light-emitting elements disposed on the first insulating layer, the light-emitting elements having first end portions disposed on the first electrode and second end portions disposed on the second electrode, and a partition disposed on the first insulating layer and being parallel to the first electrode, the partition including a first part that overlaps the light-emitting elements, and second parts that do not overlap the light-emitting elements, wherein a vertical distance from a top surface of the first electrode to a top surface of the first part is equal to a vertical distance from the top surface of the first electrode to top surfaces of the second parts.

Provided is a semiconductor light emitting device including a semiconductor structure including a first semiconductor layer, a light emitting layer, and a second semiconductor layer, a side extension structure disposed adjacent to a sidewall of the semiconductor structure, a first electrode having a first portion extending through the second semiconductor layer and the light emitting layer and electrically connected to the first semiconductor layer, and a second portion extending on an upper surface of the side extension structure in a horizontal direction, and a second electrode having a first portion electrically connected to the second semiconductor layer and a second portion extending on the upper surface of the side extension structure in the horizontal direction.

A light emitting element ink comprises a light emitting element solvent, a light emitting element dispersed in the light emitting element solvent, the light emitting element including a plurality of semiconductor layers, and an insulating film surrounding outer surfaces of the plurality of semiconductor layers, and a thickener dispersed in the light emitting element solvent, wherein the thickener includes a compound represented by Chemical Structural Formula 1 as a polyol-based compound capable of forming a hydrogen bond with the light emitting element solvent or another thickener, and the thickener has a boiling point in a range of about 200° C. to about 450° C.

The present disclosure relates to a full-color light-emitting diode (LED) display, and more particularly, to a full-color LED display using an ultra-thin LED element and a manufacturing method thereof.