There is provided a semiconductor module capable of preventing the peeling of a sealing resin on the side where connection sections used for the connection to semiconductor elements are arranged. A semiconductor module includes: an outer frame; sealing resins; gate signal output terminals, and partition sections laid across the outer flame to partition a space into a plurality of housing sections, in the partition sections which the gate signal output terminals with connection sections exposed are arranged. The partition sections have first surface sections on the side where the connection sections are arranged and second surface sections formed, on the side where the connection sections are not arranged, such that the peeling strength to the sealing resins is lower than that of the first surface sections.

A semiconductor module arrangement includes a housing and at least one pair of semiconductor substrates arranged inside the housing. Each pair of semiconductor substrates includes first and second semiconductor substrates. The first semiconductor substrate includes a first dielectric insulation layer arranged between a first metallization layer and a third metallization layer, and a second dielectric insulation layer arranged between the third metallization layer and a second metallization layer. The second semiconductor substrate includes a first dielectric insulation layer arranged between a first metallization layer and a third metallization layer, and a second dielectric insulation layer arranged between the third metallization layer and a second metallization layer. The third metallization layer of the first semiconductor substrate is electrically coupled to a first electrical potential, and the third metallization layer of the second semiconductor substrate is electrically coupled to a second electrical potential that is opposite to the first electrical potential.

A semiconductor module arrangement includes a housing and at least one pair of semiconductor substrates arranged inside the housing. Each pair of semiconductor substrates includes first and second semiconductor substrates. The first semiconductor substrate includes a first dielectric insulation layer arranged between a first metallization layer and a third metallization layer, and a second dielectric insulation layer arranged between the third metallization layer and a second metallization layer. The second semiconductor substrate includes a first dielectric insulation layer arranged between a first metallization layer and a third metallization layer, and a second dielectric insulation layer arranged between the third metallization layer and a second metallization layer. The third metallization layer of the first semiconductor substrate is electrically coupled to a first electrical potential, and the third metallization layer of the second semiconductor substrate is electrically coupled to a second electrical potential that is opposite to the first electrical potential.

A method for producing a power semiconductor module arrangement includes: arranging a semiconductor substrate in a housing, the housing including a through hole extending through a component of the housing; inserting a pin or bolt into the through hole such that an upper end of the pin/bolt is not inserted into the through hole; arranging a printed circuit board on the housing; arranging the housing on a heat sink having a hole, the housing being arranged on the heat sink such that the through hole is aligned with the hole in the heat sink; and by way of a first pressing tool, exerting a force on a defined contact area of the printed circuit board and pressing the pin/bolt into the hole in the heat sink, wherein the defined contact area is arranged directly above the pin/bolt.

A semiconductor device includes an insulation substrate including a circuit pattern, semiconductor chips mounted on the circuit pattern, a wire connecting between the semiconductor chips and between the semiconductor chip and the circuit pattern, and a conductive material serving as a conductor formed integrally with the wire.

A semiconductor device includes an insulation substrate including a circuit pattern, semiconductor chips mounted on the circuit pattern, a wire connecting between the semiconductor chips and between the semiconductor chip and the circuit pattern, and a conductive material serving as a conductor formed integrally with the wire.

A semiconductor device is extremely reliable because a sealant thereof is difficult to deteriorate even when a SiC semiconductor element is energized. The semiconductor device is produced by sealing a SiC semiconductor element 11 mounted on a multilayer substrate 12 and electrically conductive connection members 14 and 18 with a sealant 20 containing an ultraviolet light absorbent.

A semiconductor device is extremely reliable because a sealant thereof is difficult to deteriorate even when a SiC semiconductor element is energized. The semiconductor device is produced by sealing a SiC semiconductor element 11 mounted on a multilayer substrate 12 and electrically conductive connection members 14 and 18 with a sealant 20 containing an ultraviolet light absorbent.

The disclosure relates to an arrangement with a power module including power semiconductor components. The arrangement further includes a component having a curved surface. The power module is arranged on the curved surface of the component and is non-positively detachably connected to the component. The disclosure also relates to a power converter with the arrangement and to a vehicle with a power converter.

The disclosure relates to an arrangement with a power module including power semiconductor components. The arrangement further includes a component having a curved surface. The power module is arranged on the curved surface of the component and is non-positively detachably connected to the component. The disclosure also relates to a power converter with the arrangement and to a vehicle with a power converter.