A package including a frame having an opening for receiving a sensor module, wherein the frame comprises at least one electrical connection which is directed into the opening and which is arranged on an insulation layer applied to the frame, and wherein the insulation layer is connected to the frame at an insertion side of the frame, from which side the sensor module is to be inserted into the opening, and is bent along the inner side of the frame proceeding from the insertion side, such that the at least one electrical connection directed to the opening is electrically couplable to the associated sensor module connection in an arrangement.

A package including a frame having an opening for receiving a sensor module, wherein the frame comprises at least one electrical connection which is directed into the opening and which is arranged on an insulation layer applied to the frame, and wherein the insulation layer is connected to the frame at an insertion side of the frame, from which side the sensor module is to be inserted into the opening, and is bent along the inner side of the frame proceeding from the insertion side, such that the at least one electrical connection directed to the opening is electrically couplable to the associated sensor module connection in an arrangement.

A semiconductor module includes a semiconductor element, a substrate on which the semiconductor module is mounted, a heat radiating plate on which the substrate is mounted, a resin case, and a first main current electrode and a second main current electrode, in which in the first main current electrode and the second main current electrode, one end of each thereof is joined to a circuit pattern on the substrate, an other end of each thereof is extended through and incorporated in a side wall of the resin case so as to project outward of the resin case, and each thereof has at least a portion of overlap at which a part thereof overlaps in parallel with each other with a gap therebetween, and each thereof has a slope portion provided between an external projection portion and an internal projection portion.

A semiconductor module includes a semiconductor element, a substrate on which the semiconductor module is mounted, a heat radiating plate on which the substrate is mounted, a resin case, and a first main current electrode and a second main current electrode, in which in the first main current electrode and the second main current electrode, one end of each thereof is joined to a circuit pattern on the substrate, an other end of each thereof is extended through and incorporated in a side wall of the resin case so as to project outward of the resin case, and each thereof has at least a portion of overlap at which a part thereof overlaps in parallel with each other with a gap therebetween, and each thereof has a slope portion provided between an external projection portion and an internal projection portion.

Provided are a semiconductor device, a busbar, and a power converter that can suppress an increase in the size of the device and in inductance while ensuring insulation performance between terminals. For example, a semiconductor device 1 includes a first terminal 110 projecting from a sealing body 100 along a given direction, and a second terminal 120 adjacent to the first terminal 110 with a space formed between the second terminal 120 and the first terminal 110, the second terminal 120 projecting from the sealing body 100 along a given direction in a direction of projection that is the same as a direction of projection of the first terminal 110. The first terminal 110 has a first exposed part 112 exposed outside the sealing body 100. The second terminal 120 has a second sheathed part 121 projecting from the sealing body 100, the second sheathed part 121 being sheathed with an insulating material, and a second exposed part 122 projecting from the second sheathed part 121, the second exposed part 122 being exposed outside the sealing body 100. A distance D2 along a given direction from a front end 121a of the second sheathed part 121 to the sealing body 100 is longer than a distance D1 along the given direction from a front end 112a of the first exposed part 112 to the sealing body 100.

Provided are a semiconductor device, a busbar, and a power converter that can suppress an increase in the size of the device and in inductance while ensuring insulation performance between terminals. For example, a semiconductor device 1 includes a first terminal 110 projecting from a sealing body 100 along a given direction, and a second terminal 120 adjacent to the first terminal 110 with a space formed between the second terminal 120 and the first terminal 110, the second terminal 120 projecting from the sealing body 100 along a given direction in a direction of projection that is the same as a direction of projection of the first terminal 110. The first terminal 110 has a first exposed part 112 exposed outside the sealing body 100. The second terminal 120 has a second sheathed part 121 projecting from the sealing body 100, the second sheathed part 121 being sheathed with an insulating material, and a second exposed part 122 projecting from the second sheathed part 121, the second exposed part 122 being exposed outside the sealing body 100. A distance D2 along a given direction from a front end 121a of the second sheathed part 121 to the sealing body 100 is longer than a distance D1 along the given direction from a front end 112a of the first exposed part 112 to the sealing body 100.

A semiconductor device of embodiments includes an insulating substrate, a first main terminal, a second main terminal, an output terminal, a first metal layer connected to the first main terminal, a second metal layer connected to the second main terminal, a third metal layer disposed between the first metal layer and the second metal layer and connected to the output terminal, a first semiconductor chip and a second semiconductor chip provided on the first metal layer, a third semiconductor chip and a fourth semiconductor chip provided on the third metal layer, and a conductive member on the second metal layer. Then, the second metal layer includes a slit. The conductive member is provided between the end portion of the second metal layer and the slit.

A semiconductor device of embodiments includes an insulating substrate, a first main terminal, a second main terminal, an output terminal, a first metal layer connected to the first main terminal, a second metal layer connected to the second main terminal, a third metal layer disposed between the first metal layer and the second metal layer and connected to the output terminal, a first semiconductor chip and a second semiconductor chip provided on the first metal layer, a third semiconductor chip and a fourth semiconductor chip provided on the third metal layer, and a conductive member on the second metal layer. Then, the second metal layer includes a slit. The conductive member is provided between the end portion of the second metal layer and the slit.

A semiconductor device includes: an insulating substrate; a semiconductor chip; a base plate; a first heat dissipating material; and a case. The semiconductor chip and a sealing material for sealing the semiconductor chip are housed in the case. The insulating substrate includes an insulating layer and a conductor pattern provided on an upper surface of the insulating layer. The semiconductor chip is joined onto the conductor pattern by a joining material. A lower surface of the insulating substrate and an upper surface of the base plate are in contact with each other with interposition of the first heat dissipating material. The insulating substrate and the base plate are not fixed to each other.

There is provided a semiconductor module capable of preventing the peeling of a sealing resin on the side where connection sections used for the connection to semiconductor elements are arranged. A semiconductor module includes: an outer frame; sealing resins; gate signal output terminals, and partition sections laid across the outer flame to partition a space into a plurality of housing sections, in the partition sections which the gate signal output terminals with connection sections exposed are arranged. The partition sections have first surface sections on the side where the connection sections are arranged and second surface sections formed, on the side where the connection sections are not arranged, such that the peeling strength to the sealing resins is lower than that of the first surface sections.