A laminate body including a base material and a flat silicone sealing layer adhered thereto, generally without any voids, is provided. Also provided is a curable hot melt silicone composition layer with a particular curable hot melt silicone composition, providing a laminate body that does not readily cause stress on a substrate after the curable hot melt silicone composition is cured. A laminate body comprises a base material, and a curable hot melt silicone composition layer in contact with the base material. The curable hot melt silicone composition includes an organopolysiloxane resin containing siloxane units selected from a group containing T units or Q units making up at least 20 mol % or more of all siloxane units. The curable hot melt silicone composition generally has a melt viscosity as measured using a flow tester at a pressure of 2.5 MPa and at 100° C. of 5,000 Pa.Math.s or less.

A chip is mounted on a surface of the substrate, and the thermally conductive cover is disposed on a side that is of the chip and that is away from the substrate. There is a filling area on a surface that is of the thermally conductive cover and that faces the substrate, and the filling area is opposite to the chip. There is an accommodation cavity whose opening faces the substrate in the filling area. A thermal interface material layer is filled between the chip and a bottom surface of the accommodation cavity. Between an opening edge of the accommodation cavity and the substrate, there is a first gap connected to the accommodation cavity. The filling material encircles a side surface of the thermal interface material layer, so that the filling material separates the side surface of the thermal interface material layer from air.

The invention comprises a butyl acetate-silicone formulation comprising (A) an organopolysiloxane containing an average of at least two silicon-bonded alkenyl groups per molecule, (B) an organosilicon compound containing an average of at least two silicon-bonded hydrogen atoms per molecule; (C) a hydrosilylation catalyst; and a coating effective amount of (D) butyl acetate. The invention also comprises related silicone formulations made by removing a portion, or all, of (D) butyl acetate therefrom, and related cured products, methods, articles and devices.

The present invention provides a silicone skeleton-containing polymer including a silicone skeleton shown by the following formula (1) and having a weight average molecular weight of 3,000 to 500,000.

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This can provide a silicone skeleton-containing polymer that can easily form a fine pattern with a large film thickness, and can form a cured material layer (cured film) that is excellent in various film properties such as crack resistance and adhesion properties to a substrate, electronic parts, and a semiconductor device, particularly a base material used for a circuit board, and has high reliability as a film to protect electric and electronic parts and a film for bonding substrates; and a photo-curable resin composition that contains the polymer, a photo-curable dry film thereof, a laminate using these materials, and a patterning process.

A gel is provided which is the condensation reaction product of the following composition: (i) at least one condensation curable silyl terminated polymer having at least one hydrolysable and/or hydroxyl functional group(s) per molecule; (ii) a cross-linker selected from the group of a silicone, an organic polymer, a silane or a disilane molecule which contains at least two hydrolysable groups per molecule; and (iii) a condensation catalyst selected from the group of titanates, zirconates or tin (II). The molar ratio of hydroxyl and/or hydrolysable groups in polymer (i) to hydrolysable groups from component (ii) is between 0.5:1 and 1:1 using a monosilane cross-linker or 0.75:1 to 3:1 using disilanes, and the molar ratio of M-OR or tin (II) functions to the hydroxyl and/or hydrolysable group(s) in polymer (i) is comprised between 0.01:1 and 0.5:1, where M is titanium or zirconium. The composition, and uses for the gel are also disclosed.

A display device and a manufacturing method thereof are provided. The display device includes: a first array substrate, a first opposite substrate, a second array substrate and a second opposite substrate stacked in sequence; the first array substrate comprises a first overlap portion overlapping with the first opposite substrate, a first extension portion extending from the first overlap portion, and the second array substrate comprises a second overlap portion overlapping with the second opposite substrate, a second extension portion extending from the second overlap portion; a side, facing the second extension portion, of the first extension portion comprises a first control IC, and a side, away from the first extension portion, of the second extension portion comprises a second control IC; and a space between the first and the second extension portions is filled with a heat dissipation component at least in an area where the first control IC is.

A semiconductor module includes a first power semiconductor device, a conductive wire, and a resin film. The conductive wire is joined to a surface of a first front electrode of the first power semiconductor device. The resin film is formed to be continuous on at least one of an end portion or an end portion of a first joint between the first front electrode and the conductive wire in a longitudinal direction of the conductive wire, a surface of the first front electrode, and a surface of the conductive wire. The resin film has an elastic elongation rate of 4.5% to 10.0%.

The present disclosure relates to a wafer, a manufacturing method thereof, and a semiconductor device. The wafer manufacturing method includes: providing a wafer having a scribe lane for die cutting. A plurality of scribe-lane through-silicon-vias is formed at the scribe lane, and the scribe-lane through-silicon-vias are filled with a protective material to form the scribe lane. Through the technique of forming through-silicon vias at the scribe lane and filling them with protective materials, performing cutting along the line of the scribe-lane through-silicon-vias during wafer scribing, the cutting stress is reduced so and damage to the die area is prevented. The scribe-lane through-silicon-vias can effectively reduce the scribe lane width, which is conducive to miniaturizing the scribe lane and improving the effective utilization of wafers.

A thermally conductive silicone potting composition that comprises, each in a preset amount, (A) an organopolysiloxane having at least two alkenyl groups per molecule and having a viscosity of 0.01-100 Pa.Math.s at 25° C., (B) an organopolysiloxane one end of which is blocked with an alkoxysilyl group, etc., (C) a crystalline silica having an average particle size of 0.1 μm or more and less than 5 μm, (D) a crystalline silica having an average particle size of 5 μm or more and less than 100 μm, (E) an organohydrogen siloxane having at least two SiH groups per molecule, and (F) a hydrosilylation reaction catalyst, wherein the mass ratio of (C)/(D) is from 3/1 to 1/10.

A seal material for a semiconductor manufacturing device is made of a rubber composition containing fluororubber and phenol resin powder. The content of the phenol resin powder is 1 part by mass or more and 50 parts by mass or less with respect to 100 parts by mass of the fluororubber. The average particle size of the phenol resin powder is 1 μm or more and 20 μm or less.