A semiconductor device includes functional circuits electrically coupled to each other and each coupled to a different thermal circuit. The different thermal circuits are configured to maintain different operating temperatures targeted for each corresponding functional circuit. One of the thermal circuits may use a cryogenic liquid to cool the corresponding functional circuit.

Embodiments of a present invention disclose an apparatus including a silicon wafer and a through-silicon-via (TSV) filled with a thermally conductive material located in the silicon wafer, wherein the thermally conductive material has better thermal conduction properties than the silicon wafer when at cryogenic temperatures. A shunt layer connected to the thermal material in the TSV and a heat generating device located directly on top of the thermal material in the TSV and directly on top of the shunt layer, wherein the heat generated by the heat generating device is removed directly by the shunt layer and the thermal material in the TSV.

A two-phase immersion cooling system for integrated circuit assembly may be formed utilizing a heat dissipation device thermally coupled to at least one integrated circuit device, wherein the heat dissipation device may include a surface enhancement structure and a boiling enhancement material layer, such as a micro-porous material, on the surface enhancement structure.

A cryostat socket for holding an ion trap device mounted on a substrate in a cryostat includes a housing frame provided for pre-assembly in the cryostat. A pin insert is arranged in the housing frame. The pin insert includes a base plate and contact pins. The contact pins are arranged in an array. A housing cover has a receptacle for the substrate. The housing cover, when assembled with the housing frame, exerts a compressive force on a front side of the substrate by which a rear side of the substrate is pressed onto the contact pins.

An electrical assembly includes an electrical connector mounted upon a PCB and receiving a CPU therein, and a liquid Nitrogen heat dissipation device is mounted upon the PCB and intimately seated upon the CPU to remove the heat therefrom. The liquid Nitrogen heat dissipation device includes a case forming a chamber to receive the liquid Nitrogen therein. A plurality of fixing arms extend outwardly and radially to fix the liquid Nitrogent heat dissipation device in position. A fixing seat is attached upon the PCB to precisely located the CPU in position with regard to the electrical connector.

Superconducting computing system housed in a liquid hydrogen environment and related aspects are described. An example superconducting computing system includes a housing, arranged inside a liquid hydrogen environment, where a lower pressure is maintained inside the housing than a pressure outside the housing. The superconducting computing system further includes a substrate, arranged inside the housing, having a surface, where a plurality of components attached to the surface is configured to provide at least one of a computing or a storage functionality, and the substrate further comprises a plurality of circuit traces for interconnecting at least a subset of the plurality of the components. The housing is configured such that each of the plurality of components is configured to operate at a first temperature, where the first temperature is below 4.2 Kelvin, despite the liquid hydrogen environment having a second temperature greater than 4.2 Kelvin.

An active cooling structure, comprising a non-superconducting layer, a superconducting layer, and an array of Superconductor-Insulator-Normal Metal (NIS) tunnel junctions. The non-superconducting layer may comprise a plurality of non-superconducting traces. The superconducting layer may comprise a plurality of superconducting traces. The array of Superconductor-Insulator-Normal Metal (NIS) tunnel junctions may be located between the plurality of non-superconducting traces and the plurality of superconducting traces.

In an embodiment, a quantum device includes an interposer layer comprising a set of vias. In an embodiment, the quantum device includes a dielectric layer formed on a first side of the interposer, the dielectric layer including a set of transmission lines communicatively coupled to the set of vias. In an embodiment, the quantum device includes a plurality of qubit chips coupled to an opposite side of the interposer layer, each qubit chip of the plurality of qubit chips including: a plurality of qubits on a first side of the qubit chip and a plurality of protrusions on a second side of the qubit chip. In an embodiment, the quantum device includes a heat sink thermally coupled with the plurality of qubit chips, the heat sink comprising a plurality of recesses aligned with the plurality of protrusions of the plurality of qubit chips.

Systems and/or methods can provide for solid-state refrigeration below 1 degree Kelvin. By applying a simple sequence of ac electrical signals to a gated semiconductor device, electrons are cooled in a refrigeration sequence that, in turn, provides cooling directly to the heat load of interest. Electrons in a single subband of a semiconductor quantum well are expanded adiabatically into several subbands, resulting in a temperature drop. Repeated application of this cycle at MHz-GHz frequencies results in a significant cooling power. The anticipated cooling powers can compete with today's standard cryogenic system, the dilution refrigerator, which represents the market standard for achieving cryogenic temperatures.

Separating temperature domains in cooled systems, including: cooling at least one first component of a circuit board using a first cooling system; and conductively coupling the at least one first component to at least one second component using a superconductive portion of a power plane of the circuit board.