An electronic component comprising a plastic package and an electric chip which is inside the package. The electronic component comprises a metallic die pad and a metallic first support structure extends from the die pad to a first support point on one of the side surfaces of the plastic package. The electronic component also comprises a metallic opposing pad and a metallic second support structure which extends from the opposing pad to a second support point on one of the side surfaces of the plastic package.

The semiconductor device includes: a heat spreader; a semiconductor element joined to the heat spreader via a first joining member; a first lead frame joined to the heat spreader via a second joining member; a second lead frame joined to the semiconductor element via a third joining member; and a mold resin. In a cross-sectional shape obtained by cutting at a plane perpendicular to a one-side surface of the heat spreader, an angle on the third joining member side out of two angles formed by a one-side surface of the semiconductor element and a straight line connecting an end point of a joining surface between the third joining member and the semiconductor element and an end point of a joining surface between the third joining member and the second lead frame, is not smaller than 90° and not larger than 135°.

In a general aspect, a method for producing a semiconductor device assembly can include defining a cavity in a conductive spacer, and electrically and thermally coupling a semiconductor die with the conductive spacer, such that the semiconductor die is at least partially embedded in the cavity. The semiconductor die can have a first surface having active circuitry included therein, a second surface opposite the first surface, and a plurality of side surfaces each extending between the first surface of the semiconductor die and the second surface of the semiconductor die. The method can also include electrically coupling a direct bonded metal (DBM) substrate with the first surface of the semiconductor die.

A lead frame is provided, including one or more power terminals and one or more control terminals, wherein at least one of the control terminals is externally terminated with a press-fit contact member, and wherein at least one of the control terminals and at least one power terminals are formed from different materials. With the disclosed lead frame of the invention, lower material cross sections in the power terminals will be provided because of the better electrical conductivity when using pure copper compared to alloys with higher mechanical strengths. Also specific/different plating could be added to the individual needs of the different pin types without using masks in the plating process.

A semiconductor device includes: semiconductor elements; a package sealing the semiconductor elements and being rectangular in a top view; control terminals protruding from a first side of the package; output terminals protruding from a second side facing the first side of the package; and a recessed portion formed in a third side adjacent to the first side and the second side of the package, wherein a part of the control terminals is disposed at end portions of lead frames, the semiconductor device further includes dummy terminals disposed at other end portions of the lead frames, respectively, the dummy terminals protruding from the recessed portion, and an amount of the protrusion of each of the dummy terminals from the recessed portion is smaller than or equal to 0.75 mm.

A power device for surface mounting has a leadframe including a die-attach support and at least one first lead and one second lead. A die, of semiconductor material, is bonded to the die-attach support, and a package, of insulating material and parallelepipedal shape, surrounds the die and at least in part the die-attach support and has a package height. The first and second leads have outer portions extending outside the package, from two opposite lateral surfaces of the package. The outer portions of the leads have lead heights greater than the package height, extend throughout the height of the package, and have respective portions projecting from the first base.

A semiconductor package includes a die attach pad; a plurality of lead terminals disposed around the die attach pad; a semiconductor die mounted on the die attach pad; a molding compound encapsulating the plurality of lead terminals, the semiconductor die, and the die attach pad; and a step cut sawn into the molding compound along a perimeter of a bottom surface of the semiconductor package. The step cut penetrates through an entire thickness of each of the plurality of lead terminals, whereby each of the plurality of lead terminals has at least an exposed outer end at the step cut.

A semiconductor package assembly includes a carrier with a die attach surface and a contact pad separated from the die attach surface, a semiconductor die mounted on the die attach surface, the semiconductor die having a front side metallization that faces away from the die attach surface, an interconnect ribbon attached to the semiconductor die and the contact pad such that the interconnect ribbon electrically connects the front side metallization to the contact pad, and an electrically insulating encapsulant body that encapsulates the semiconductor die and at least part of the interconnect ribbon. The interconnect ribbon includes a layer stack of a first metal layer and a second layer formed on top of the first metal layer. The first metal layer includes a different metal as the second metal layer. The first metal layer faces the front side metallization.

A semiconductor device includes a semiconductor element circuit, a conductive support and a sealing resin. The conductive support includes a die pad, first terminals spaced in a first direction, second terminals spaced in the first direction and opposite to the first terminals in a second direction perpendicular to the first direction, and a support terminal connected to the die pad. The sealing resin encapsulates portions of the first and second terminals, a portion of the support terminal, the semiconductor element circuit and the die pad. The sealing resin has two first side surfaces spaced apart in the second direction and two second side surfaces spaced apart in the first direction. The first terminals and second terminals are exposed from the first side surfaces, while none of the elements of the conductive support is exposed from the second side surfaces.

A power module for PCB embedding includes: a leadframe; a power semiconductor die with a first load terminal and control terminal at a first side of the die and a second load terminal at the opposite side, the second load terminal soldered to the leadframe; a first metal clip soldered to the first load terminal and forming a first terminal of the power module at a first side of the power module; and a second metal clip soldered to the control terminal and forming a second terminal of the power module at the first side of the power module. The leadframe forms a third terminal of the power module at the first side of the power module, or a third metal clip is soldered to the leadframe and forms the third terminal. The power module terminals are coplanar within +/−30 μm at the first side of the power module.