A method of making a packaged integrated circuit device includes forming a lead frame with leads that have an inner portion and an outer portion, the inner portion of the lead is between a periphery of a die pad and extends to one end of openings around the die pad. The outer portion of the leads are separated along their length almost up to an opposite end of the openings. Leads in a first subset of the leads alternate with leads in a second subset of the leads. The inner portion of the first subset of the leads is bent. The die pad, the inner portion of the leads, and only a first portion of the openings adjacent the inner portion of the leads are encapsulated. A second portion of the openings and the output portions of the leads form a dam bar for the encapsulating material.

A semiconductor device includes a sealing resin being an insulating resin sealing the semiconductor element therein, and a plurality of electrode terminals each including a root portion being a root protruding from the sealing resin, a tip portion being a tip and portion extending from the root portion, and a middle portion provided between the tip portion and the root portion, and the middle portion includes first middle portions having a width wider than those of the root portion and the tip portion in the first direction, and a second middle portion having a width wider than those of the root portion and the tip portion in the first direction, a width narrower than those of the first middle portions in the first direction, and a bent portion bent toward in a third direction orthogonal to the first direction and the second direction.

An electronic device, a lead frame, and a method, including providing a lead frame with a Y-shaped feature having branch portions connected to a dam bar in a prospective gap in an equally spaced repeating lead pitch pattern, and a set of first leads extending parallel to one another along a first direction and spaced apart from one another along a second direction in lead locations of the repeating lead pitch pattern, attaching a semiconductor die to a die attach pad of the lead frame, attaching bond wires between bond pads of the semiconductor die, and the first leads, enclosing first portions of the first leads, the die attach pad, and a portion of the semiconductor die in a package structure, and performing a dam bar cut process that cuts through portions of the dam bar between the lead locations of the repeating lead pitch pattern.

A semiconductor device is provided that includes a lead frame, a die attached to the lead frame using a first solder, a clip attached to the die using a second solder, and a copper slug attached to the clip. First gull wing leads are attached to the leadframe for a drain connection of the semiconductor device. Second gull wing leads are attached to the clip for a gate connection and for a source connection of the semiconductor device.

A power module includes a metal frame having a first and second device attach pads, first and second semiconductor packages each having an encapsulant body, a die pad exposed at a lower surface of the encapsulant body, a plurality of leads protruding out from the encapsulant body, and a potting compound that encapsulates both of the first and second semiconductor packages and partially covers the metal frame. The first semiconductor package is mounted on the metal frame such that the die pad of the first semiconductor package faces and electrically contacts the first device attach pad. The second semiconductor package is mounted on the metal frame such that the die pad of the second semiconductor package faces and electrically contacts the second device attach pad. The plurality of leads from each of the first and second semiconductor packages are electrically accessible from outside of the potting compound.

A semiconductor package includes a first set of leads, a temperature sensor proximate the first set of leads, a second set of leads, a semiconductor die, a first electrical connection between the temperature sensor and the semiconductor die, a second electrical connection between the semiconductor die and the second set of leads, and mold compound at least partially covering the temperature sensor, the semiconductor die, the first set of leads and the second set of leads. The mold compound physically separates the semiconductor die from the temperature sensor and the first set of leads.

An electronic device (e.g., integrated circuit) and method of making the electronic device is provided that reduces a strength of an electric field generated outside a package of the electronic device proximate to the low voltage lead pins. The electronic device includes a low voltage side and a high voltage side. The low voltage side includes a low voltage die attached to a low voltage die attach pad. Similarly, the high voltage side includes a high voltage die attached to a high voltage die attach pad. Lead pins are attached to each of the low and high voltage attach pads and extend out from a package of the electronic device in an inverted direction.

In one example, a semiconductor device includes a substrate having leads that include lead terminals, lead steps, and lead offsets extending between the lead steps so that at least some lead steps reside on different planes. A first electronic component is coupled to a first lead step side and includes a first electronic component first side, and a first electronic component second side opposite to the first electronic component first side. A second electronic component is coupled to a second lead step side, and includes a second electronic component first side, and a second electronic component second side opposite to the second electronic component first side. An encapsulant encapsulates the first electronic component, the second electronic component, and portions of the substrate. The lead terminals are exposed from a first side of the encapsulant. Other examples and related methods are also disclosed herein.

A semiconductor device includes a semiconductor element, a lead frame, a conductive member, a resin composition and a sealing resin. The semiconductor element has an element front surface and an element back surface facing away in a first direction. The semiconductor element is mounted on the lead frame. The conductive member is bonded to the lead frame, electrically connecting the semiconductor element and the lead frame. The resin composition covers a bonded region where the conductive member and lead frame are bonded while exposing part of the element front surface. The sealing resin covers part of the lead frame, the semiconductor element, and the resin composition. The resin composition has a greater bonding strength with the lead frame than a bonding strength between the sealing resin and lead frame and a greater bonding strength with the conductive member than a bonding strength between the sealing resin and conductive member.

A device includes a relative temperature detector configured to determine a temperature difference between a device temperature sensed near a switch device and an ambient temperature sensed outside the switch device. The relative temperature detector is configured to generate a relative temperature output signal based on comparing the temperature difference to a relative temperature threshold. A power detector is configured to generate a power level signal based on comparing an indication of switch power of the switch device to a power threshold. The power level signal specifies whether the indication of switch power is above or below the power threshold. A thermal capacity control is configured to disable the switch device based on the power level signal specifying that the indication of switch power is above the power threshold and based on the relative temperature output signal indicating the temperature difference is above the relative temperature threshold.