The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first conductive layer positioned above the substrate, a bottom conductive layer positioned above the first conductive layer and electrically coupled to the first conductive layer, a programmable insulating layer positioned on the bottom conductive layer, a top conductive layer positioned on the programmable insulating layer, and a redistribution structure positioned above the first conductive layer and electrically coupled to the first conductive layer. The bottom conductive layer, the programmable insulating layer, and the top conductive layer together configure a programmable unit.

The present disclosure provides a method and a device for repairing a metal wire. The method includes: locating a first position on the metal wire to be repaired, the first position being at a first side of a break point on the metal wire to be repaired; and outputting a first laser beam in such a manner as to move from the first position toward the break point and scan a portion of the metal wire between the first position and the break point, so as to fuse the portion of the metal wire and enable fused metal to flow toward the break point to fill the break point.

The present application discloses a method for fabricating a semiconductor device. The method includes providing a substrate, forming a first conductive layer above the substrate, concurrently forming a bottom conductive layer and a redistribution structure above the first conductive layer, forming a programmable insulating layer on the bottom conductive layer, and forming a top conductive layer on the programmable insulating layer. The bottom conductive layer, the programmable insulating layer, and the top conductive layer together configure a programmable unit. The bottom conductive layer and the redistribution structure are electrically coupled to the first conductive layer.

A parallel redundant system comprises a substrate, a first circuit disposed over the substrate, a first conductor disposed at least partially in a first layer over the substrate and wire routed to the first circuit, a second circuit disposed over the substrate, the second circuit redundant to the first circuit, a second conductor disposed in a second layer over the substrate and electrically connected to the second circuit, the second conductor disposed at least partially over the first conductor, a dielectric layer disposed at least partially between the first layer and the second layer, and a laser weld electrically connecting the first conductor to the second conductor.

Methods for creating a conductive feature in a dielectric material are provided. In an embodiment, such a method comprises irradiating a region of a dielectric material having a resistivity of at least 10.sup.8 W cm with a focused ion beam, the irradiated region corresponding to a conductive feature embedded in the dielectric material, the conductive feature having a conductivity greater than that of the dielectric material; and forming one or more contact pads of a conductive material in electrical communication with the conductive feature, the one or more contact pads configured to apply a voltage across the conductive feature using a voltage source.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a first conductive layer positioned above the substrate, a bottom conductive layer positioned above the first conductive layer and electrically coupled to the first conductive layer, a programmable insulating layer positioned on the bottom conductive layer, a top conductive layer positioned on the programmable insulating layer, and a redistribution structure positioned above the first conductive layer and electrically coupled to the first conductive layer. The bottom conductive layer, the programmable insulating layer, and the top conductive layer together configure a programmable unit.

A parallel redundant system comprises a substrate, a first circuit disposed over the substrate, a first conductor disposed at least partially in a first layer over the substrate and wire routed to the first circuit, a second circuit disposed over the substrate, the second circuit redundant to the first circuit, a second conductor disposed in a second layer over the substrate and electrically connected to the second circuit, the second conductor disposed at least partially over the first conductor, a dielectric layer disposed at least partially between the first layer and the second layer, and a laser weld electrically connecting the first conductor to the second conductor.

A semiconductor structure is provided in which metal semiconductor alloy pillars are formed at least partially within the sidewall surfaces of each semiconductor fin that extends from a surface of a substrate. These pillars are fuses (i.e., FinFET fuses) that are formed at a very tight pitch dimensions. The pillars can be trimmed after forming FinFET devices. The present application provides a method for forming on-chip FinFET fuses easily by choice of the metal semiconductor alloy, the amount of pillar trim, the number of contacted pillars and to a lower design degree the height of each pillar.

A parallel redundant system comprises a substrate, a first circuit disposed over the substrate, a first conductor disposed at least partially in a first layer over the substrate and wire routed to the first circuit, a second circuit disposed over the substrate, the second circuit redundant to the first circuit, a second conductor disposed in a second layer over the substrate and electrically connected to the second circuit, the second conductor disposed at least partially over the first conductor, a dielectric layer disposed at least partially between the first layer and the second layer, and a laser weld electrically connecting the first conductor to the second conductor.

An array substrate, a fabricating method thereof, and a related display device are provided. The method for forming an array substrate can comprises: forming a plurality of signal lines over a base substrate; forming a conductive line over the base substrate, the conductive line connecting at least two of the plurality of signal lines; forming an insulating layer over the base substrate, the plurality of signal lines, and the conductive line; forming a via hole through the insulating layer at a position over the conductive line and between the at least two of the plurality of signal lines; and removing a portion of the conductive line through the via hole to disconnect the conductive line.