The present invention relates to a method of connecting circuit elements and a corresponding system for connecting circuit elements. The method includes providing a plurality of flexible circuit elements on a carrier element; forming a connecting structure. The formed connecting structure includes at least two contact points; and operative connections between each of the plurality of flexible circuit elements and the at least two contact points. The method further includes severing the operative connection between at least one of the plurality of flexible circuit elements and the at least two contact points.

A microelectronic device, a semiconductor package including the device, an IC device assembly including the package, and a method of making the device. The device includes a substrate; physical layer (PHY) circuitry on the substrate including a plurality of receive (RX) circuits and a plurality of transmit (TX) circuits; electrical contact structures at a bottom surface of the device; signal routing paths extending between the electrical contact structures on one hand, and, on another hand, at least some of the RX circuits or at least some of the TX circuits; and electrical pathways leading to the PHY circuitry and configured such that at least one of: an enable signal input to the device is to travel through at least some of the electrical pathways to enable a portion of the PHY circuitry; or a disable signal input to the device is to travel through at least some of the electrical pathways to disable a corresponding portion of the PHY circuitry.

An electronic device includes one or more multinode pads having two or more conductive segments spaced from one another on a semiconductor die. A conductive stud bump is selectively formed on portions of the first and second conductive segments to program circuitry of the semiconductor die or to couple a supply circuit to a load circuit. The multinode pad can be coupled to a programming circuit in the semiconductor die to allow programming a programmable circuit of the semiconductor die during packaging. The multinode pad has respective conductive segments coupled to the supply circuit and the load circuit to allow current consumption or other measurements during wafer probe testing in which the first and second conductive segments are separately probed prior to stud bump formation.

A bonded structure is disclosed. The bonded structure can comprise a first semiconductor element having a first contact pad. An interposer can include a second contact pad on a first side of the interposer and a third contact pad and a fourth contact pad on a second side of the interposer opposite the first side, the second contact pad bonded to the first contact pad; a second semiconductor element having a fifth contact pad bonded to the third contact pad and a sixth contact pad bonded to the fourth contact pad. A switching circuitry can be configured to switch between a first electrical connection between the second and third contact pads and a second electrical connection between the second and fourth contact pads.

A method includes setting an order of input-output channels of a column of a first chiplet of multiple chiplets of a chiplet-based system, wherein one or more of the multiple chiplets include field-configurable input-output channels arranged at a periphery of the chiplets; and programming a second chiplet of the multiple chiplets to change an order of input-output channels of a column of the second chiplet to match the order of input-output channels of the column of the first chiplet.

The present application discloses a multi-die FPGA implementing a built-in analog circuit using an active silicon connection layer, and relates to the field of FPGA technology. The multi-die FPGA allows multiple small-scale and small-area dies to cascade to achieve large-scale and large-area FPGA products, reducing processing difficulties and improving chip production yields. Meanwhile, due to the existence of the active silicon connection layer, some circuit structures that are difficult to implement within the die and/or occupy a large die area and/or have a low processing requirement can be laid out in the silicon connection layer, solving the existing problems of making these circuit structures directly within the die. Part of the circuit structures can be implemented within the silicon connection layer and the rest in the die, which helps optimize the performance of FPGA products, improve system stability, and reduce system area.

An arrayed switch circuit includes a substrate, signal conductive pads and signal expansion pins. The signal conductive pads are disposed on the substrate at intervals, and the signal conductive pads are arranged to form a signal conductive pad array. Each of the signal conductive pads has a row position and a column position in the signal conductive pad array. A row signal switch is provided between any two adjacent signal conductive pads corresponding to the same row position, and a column signal switch is provided between any two adjacent signal conductive pads corresponding to the same column position. The signal expansion pins are connected to the signal conductive pads located on at least one side of the signal conductive pad array through signal expansion switches respectively.

A device is provided. The device includes a bridge layer over a first substrate. A first connector electrically connecting the bridge layer to the first substrate. A first die is coupled to the bridge layer and the first substrate, and a second die is coupled to the bridge layer.

A method for tuning a resonant frequency of wireless communication circuitry on a multichip module including a plurality of chips includes applying an electrical insulator to an upper surface of the multichip module; creating a plurality of openings in the electrical insulator, each opening being positioned at a successive one of the bond pads to be electrically connected to create a plurality of exposed bond pads; applying metal to each exposed bond pad to form a successive one of a plurality of interconnect bases; removing a portion of the layer of photoresist to create a plurality of bridge supports, each bridge support positioned between a successive pair of interconnect bases; applying metal to each bridge support and associated interconnect bases to form a successive one of the interconnect traces; removing the bridge supports; and disconnecting one or more of the interconnect traces as necessary to obtain a target resonant frequency.

Systems and methods are provided for a modular die-to-die interconnect for integrated circuits in a three-dimensional arrangement. An integrated circuit system may include a first chiplet that includes a grid-based interconnect field and a second chiplet that includes a complementary grid-based interconnect field. A number of interconnects of the complementary grid-based interconnect field of the second chiplet are connected to a corresponding number of interconnects of the grid-based interconnect field of the first chiplet.