A semiconductor device has a first substrate and a first electrical component disposed over the first substrate. A first support frame is disposed over the first substrate. The first support frame has a horizontal support channel extending across the first substrate and a vertical support brace extending from the horizontal support channel to the first substrate. The first support frame can have a vertical shielding partition extending from the horizontal support channel to the first substrate. An encapsulant is deposited over the first electrical component and first substrate and around the first support frame. A second electrical component is disposed over the first electrical component. A second substrate is disposed over the first support frame. A second electrical component is disposed over the second substrate. A third substrate is disposed over the second substrate. A second support frame is disposed over the second substrate.

A semiconductor package and a method of forming the same are provided. The semiconductor package includes: a semiconductor substrate having a front side and a back side, the semiconductor substrate having a chip area and a dummy area; a front structure below the front side, and including an internal circuit, an internal connection pattern, a guard pattern, and a front insulating structure; a rear protective layer overlapping the chip area and the dummy area, and a rear protrusion pattern on the rear protective layer and overlapping the dummy area, the rear protective layer and the rear protrusion pattern being on the back side; a through-electrode structure penetrating through the chip area and the rear protective layer, and electrically connected to the internal connection pattern; and a rear pad electrically connected to the through-electrode structure. The internal circuit and the internal connection pattern are below the chip area, and the guard pattern is below the chip area adjacent to the dummy area.

Integrated circuit (IC) chips are provided. An IC chip according to the present corner area between an outer corner of the device region and an inner corner of the ring region. The ring region includes a first active region extending along a first direction, a first source/drain contact disposed partially over the first active region and extending along the first direction, and first gate structures disposed completely over the first active region and each extending lengthwise along the first direction. The corner area includes a second active region extending along a second direction that forms an acute angle with the first direction, a second source/drain contact disposed partially over the second active region and extending along the second direction, and second gate structures disposed over the second active region and each extending along the first direction.

Integrated circuit (IC) chips and seal ring structures are provided. An IC chip according to the present disclosure includes an interconnect structure that includes a first metal line, a second metal line, a third metal line, a fourth metal line, and a fifth meal line extending along a first direction, a first group of lateral connectors disposed between the second metal line and the third metal line or between the fourth metal line and the fifth metal line, and a second group of lateral connectors disposed between the first metal line and the second metal line or between the third metal line and the fourth metal line.

A semiconductor chip, a semiconductor package including the same, and a method of fabricating the same, the semiconductor chip including a substrate that includes a device region and an edge region; a device layer and a wiring layer that are sequentially stacked on the substrate; a subsidiary pattern on the wiring layer on the edge region; a first capping layer that covers a sidewall of the subsidiary pattern, a top surface of the wiring layer, and a sidewall of the wiring layer, the first capping layer including an upper outer sidewall and a lower outer sidewall, the lower outer sidewall being offset from the upper outer sidewall; and a buried dielectric pattern in contact with the lower outer sidewall of the first capping layer and spaced apart from the upper outer sidewall of the first capping layer.

A method of forming a semiconductor package includes attaching a first package component to a first carrier; attaching a second package component to the first carrier, the second package component laterally displaced from the first package component; attaching a third package component to the first package component, the third package component being electrically connected to the first package component; removing the first carrier from the first package component and the second package component; after removing the first carrier, performing a first circuit probe test on the second package component to obtain first test data of the second package component; and comparing the first test data of the second package component with prior data of the second package component.

Chip sealing structures and methods of manufacture are described. In an embodiment, a chip structure includes a main body area formed of a substrate, a back-end-of-the-line (BEOL) build-up structure spanning over the substrate, and chip edge sidewalls extending from a back surface of the substrate to a top surface of the BEOL build-up structure and laterally surrounding the substrate and the BEOL build-up structure. In accordance with embodiments, the chip structure may further include a conformal sealing layer covering at least a first chip edge sidewall of the chip edge sidewalls and a portion of the top surface of the BEOL build-up structure, and forming a lip around the top surface of the BEOL build-up structure.

A semiconductor structure is provided. The semiconductor structure includes two circuit regions, two inner seal rings, an outer seal ring, a first redundant region, and an electrical circuit. Each of the inner seal rings surrounding one of the circuit regions. The outer seal ring is disposed around the inner seal rings, and each of the inner seal rings contacts the outer seal ring at different interior corners of the outer seal ring. The first redundant region is located between at least one of the inner seal rings and the outer seal ring. The electrical circuit is formed in the first redundant region and electrically connected to at least one of the circuit regions.

A semiconductor package includes a substrate, at least one semiconductor chip arranged in the substrate and having chip pads, and a redistribution wiring layer covering a lower surface of the substrate and including first and second redistribution wirings and dummy patterns, the first and second redistribution wirings being stacked in at least two levels and connected to the chip pads. The first and second redistribution wirings are arranged in a redistribution region of the redistribution wiring layer, and the dummy patterns extend in an outer region outside the redistribution region to partially cover corner portions of the redistribution wiring layer, respectively.

A semiconductor device includes a chip, a first kerf adjacent the chip and having a first main direction, a second kerf adjacent the chip and having a second main direction. A kerf junction is formed by the first kerf and the second kerf. A crack stop barrier is located along a first portion of a perimeter of the kerf junction.