A semiconductor device includes an insulation substrate including a circuit pattern, semiconductor chips mounted on the circuit pattern, a wire connecting between the semiconductor chips and between the semiconductor chip and the circuit pattern, and a conductive material serving as a conductor formed integrally with the wire.

A semiconductor device includes an insulation substrate including a circuit pattern, semiconductor chips mounted on the circuit pattern, a wire connecting between the semiconductor chips and between the semiconductor chip and the circuit pattern, and a conductive material serving as a conductor formed integrally with the wire.

This semiconductor device includes: a first insulation resin portion formed on the mounting surface side of a lead frame; a second insulation resin portion formed on the heat dissipation surface side of the lead frame; and a heatsink fixed to the heat dissipation surface of the second insulation resin portion, wherein the second insulation resin portion has a second skirt portion formed at an end of a thin molded portion, the first insulation resin portion has a first skirt portion covering the second skirt portion, and an outer peripheral surface part of the second skirt portion has a first end connected to the lead frame and the first skirt portion, a second end connected to the heatsink, and at least one bent portion formed between the first end and the second end.

In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.

A diode arrangement, including a semiconductor diode with a p/n junction. A first electrical contact is formed on an upper side and a second electrical contact is formed on an underside. The semiconductor being designed in an uncased manner as a flat die and having a planar upper side and a planar underside, and the metal-plated upper side forming the first contact of the semiconductor diode, and the metal-plated underside forming the second contact. A first flat metallic conductor has a first contact surface and a second contact surface spaced a distance apart from the first contact surface by a connecting piece. A second flat metallic connector has a first contact surface and a second contact surface spaced a distance from the first contact surface by a connecting piece. The metal-plated upper side is connected in a materially bonded manner to the first contact surface of the first metallic connector.

In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.

This semiconductor device includes: a first insulation resin portion formed on the mounting surface side of a lead frame; a second insulation resin portion formed on the heat dissipation surface side of the lead frame; and a heatsink fixed to the heat dissipation surface of the second insulation resin portion, wherein the second insulation resin portion has a second skirt portion formed at an end of a thin molded portion, the first insulation resin portion has a first skirt portion covering the second skirt portion, and an outer peripheral surface part of the second skirt portion has a first end connected to the lead frame and the first skirt portion, a second end connected to the heatsink, and at least one bent portion formed between the first end and the second end.

In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.

In a power semiconductor device, an IGBT has a collector electrode bonded to a metal plate by a bonding material. A diode has a cathode electrode bonded to the metal plate by the bonding material. An interconnection member is bonded to an emitter electrode of the IGBT by a bonding material. The bonding material includes a bonding material and a bonding material. The bonding material is interposed between the IGBT and the interconnection member. The bonding material fills a through hole formed in the interconnection member. The bonding material reaches the bonding material and is therefore connected to the bonding material.

A module (1) includes a first functional device (2) and a second functional device (3). The first functional device (2) includes a base electrode, an emitter electrode and a collector electrode. The second functional device (3) includes at least one electrode. The module (1) further includes a conductive frame (4). One of the base electrode, the emitter electrode, and the collector electrode of the first functional device (2) is directly connected to the frame (4). The electrode of the second functional device (3) is also directly connected to the frame (4). The frame (4) includes a portion serving as a terminal for external connection.