A substrate bonding apparatus includes a first bonding chuck configured to support a first substrate and a second bonding chuck configured to support a second substrate such that the second substrate faces the first substrate. The first bonding chuck includes a first base, a first deformable plate on the first base and configured to support the first substrate and configured to be deformed such that a distance between the first base and the first deformable plate is varied, and a first piezoelectric sheet on the first deformable plate and configured to be deformed in response to power applied thereto to deform the first deformable plate.

A process for bonding chips to a substrate by direct bonding includes providing a support with which the chips are in contact, the chips in contact with the support being separate from one another. This bonding process also includes forming a liquid film on one face of the substrate, bringing the chips into contact with the liquid film, where the action of bringing the chips into contact with the liquid film causes attraction of the chips toward the substrate, and evaporating the liquid film in order to bond the chips to the substrate by direct bonding.

A die bonding method includes obtaining information about a quality grade of each die of a plurality of dies placed at a wafer, picking up a first die among the plurality of dies from the wafer, identifying a bonding location of a plurality of bonding locations from a substrate according to a quality grade of the first die, and bonding the first die to the bonding location of the substrate.

A pick and place method and apparatus thereof are provided. The pick and place method includes: providing at least one semiconductor element disposed on a source storage location; picking up the at least one semiconductor element from the source storage location; transferring the at least one semiconductor element to a temporary storage device according to a signal; positioning the at least one semiconductor element through the temporary storage device; and picking up the positioned semiconductor element from the temporary storage device and placing the positioned semiconductor element on a destination storage location.

A bonding apparatus includes a stage on which a substrate is seated, a gantry installed above the stage, a bonding unit configured to bond a chip to the substrate while moving along the gantry, and a control part moving the bonding unit to align the bonding unit with a bonding position on the substrate, controlling the bonding unit to allow the bonding unit to bond the chip at the bonding position, determining a movement distance of the bonding unit based on a weighted sum of a number of continuous operations and an idle time of the bonding unit.

A wafer bonding device includes: a first fixing apparatus fixing a first wafer, on which a first alignment mark is disposed; a second fixing apparatus fixing a second wafer, on which a second alignment mark is disposed, the second fixing apparatus being disposed opposite to the first fixing apparatus; a reflection member between the first and second fixing apparatuses; a mark reader which reads position information about the first and second alignment marks by means of the reflection member, for aligning the first wafer with the second wafer; and a heating apparatus, configured to heat the first wafer or the second wafer to thermally expand the first wafer or the second wafer so that the first alignment mark or the second alignment mark is located at a central position of a field of view of the mark reader. A wafer bonding method also is involved.

A die bonding method with corner or side contact without impact force includes the steps: picking up a die by a die bonding device, wherein a surface of the die has no solder and bump; moving the die to one side of a die placement area of a substrate, wherein the substrate has no solder and bump; blowing one corner or one side of the die a positive pressure from the die bonding device to bend the corner/side to contact the die placement area; forming a bonding wave after the corner/side of the die contacting the die placement area, and spreading the bonding wave from the corner/side to opposite corner/side of the die, and separating the die from the die bonding device gradually and bonding the die on the die placement area; and bonding the die on the die placement area completely.

A method includes: wetting a plurality of top dies disposed on a top wafer in a first wet clean tool located in a wet clean chamber; wetting a plurality of bottom dies disposed on a bottom wafer in a second wet clean tool located in the wet clean chamber, the plurality of bottom dies corresponding to the plurality of top dies, respectively; transferring the top wafer to a wafer-to-wafer bonding tool located in a wafer-to-wafer bonding chamber, without placing the top wafer in a first wafer container; transferring the bottom wafer to the wafer-to-wafer bonding tool, without placing the bottom wafer in a second wafer container; and bonding, by the wafer-to-wafer bonding tool, the top wafer to the bottom wafer.

An ultrasonic bonding device includes a stage and an ultrasonic horn. A first flat member and a second flat member to be bonded are placed on the stage. The ultrasonic horn includes a press part to be pressed on a laminated portion of the first flat member and the second flat member. The stage includes a lower-side surface, a higher-side surface, and a step wall surface. The first flat member is to be placed on the lower-side surface. The higher-side surface is positioned higher than the lower-side surface by a predetermined step height. The second flat member is to be placed on the higher-side surface. The step wall surface is positioned in a boundary between the lower-side surface and the higher-side surface.

A substrate positioning apparatus includes a holder and a rotating device. The holder is configured to hold a substrate. The rotating device is configured to rotate the holder. The rotating device includes a rotation shaft, a bearing member, a base member, a driving unit and a damping device. The rotation shaft is fixed to the holder. The bearing member is configured to support the rotation shaft in a non-contact state. The bearing member is fixed on the base member. The driving unit is configured to rotate the rotation shaft. The damping device includes a rail connected to the base member and a slider connected to the rotation shaft, and is configured to produce a damping force against a relative operation between the rotation shaft and the base member by a resistance generated between the rail and the slider.