There is provided an Ag alloy bonding wire for semiconductor devices which exhibits a favorable bond reliability in a high-temperature environment even when using a mold resin of high S content and can suppress a chip damage at the time of ball bonding. The Ag alloy bonding wire is characterized by containing at least one element selected from the group consisting of Pd and Pt (hereinafter referred to as a “first element”) and at least one element selected from the group consisting of P, Cr, Zr and Mo (hereinafter referred to as a “second element”) so as to satisfy

[00001]$0.05\le \text{x}1\le 3.0,\text{and}$

[00002]$15\le \text{x}2\le 700$

where x1 is a total concentration of the first element [at.%] and x2 is a total concentration of the second element [at. ppm], with the balance including Ag.

A method for manufacturing a bonding wire includes: putting a surface layer metal of a bonding wire in a crucible having a die cooler provided at the lower part thereof and melting the same; putting a main component metal core of the bonding wire in a core guide located at the upper part of the die cooler of the crucible and heating the core guide to the melting point or below of the metal core; transferring the metal core toward the die cooler so as to allow the molten surface layer metal to be injected to the surface of the metal core; and manufacturing a 50 μm to 350 μm bonding wire from the cast wire precursor by using a drawing die.

A process to fabricate ultra-fine grain metal wire, comprising: inserting a plurality of metal strands into a flexible elastic polyurethane sheath having an accommodating slot for each of the strands of metal to form a sheathed strand assembly; equal channel angular pressing (ECAP pressing) the sheathed strand assembly through an ECAP die having a plurality of die channels corresponding to the plurality of metal strands. The process is designed to improve electric conductance and mechanical properties of elongated metal parts and is especially applicable to optimize the conductance and tensile strength of copper cables, wires, strings, and rods.

A wire bonding method, comprising the steps of: extending a length of bonding wire from a capillary to form a wire tail; deforming a point on the wire tail to form a weakened portion between the wire tail and a remainder of the bonding wire retained within the capillary; and retracting at least a portion of the wire tail including the weakened portion into the capillary prior to bonding the wire tail to at least one of a bonding pad and a substrate.

A process to fabricate ultra-fine grain metal wire, comprising: inserting a plurality of metal strands into a flexible elastic polyurethane sheath having an accommodating slot for each of the strands of metal to form a sheathed strand assembly; equal channel angular pressing (ECAP pressing) the sheathed strand assembly through an ECAP die having a plurality of die channels corresponding to the plurality of metal strands. The process is designed to improve electric conductance and mechanical properties of elongated metal parts and is especially applicable to optimize the conductance and tensile strength of copper cables, wires, strings, and rods.

A manufacturing method of a plated wire rod, the method including: preparing a plated wire rod precursor including a base material that is wire-drawn and that has a linear shape and a plating film that is provided on a surface of the base material, where the base material is made of first metal and the plating film is made of second metal of a different composition from the first metal; obtaining a plated wire rod-intermediate body by performing skin-passing on the plated wire rod precursor using a die; inspecting, after the skin-passing, for presence/absence of a defect in the plated wire rod-intermediate body using an eddy current testing device and a camera inspection device; and obtaining a plated wire rod by removing the defect in the plated wire rod-intermediate body that is detected in the inspecting.

A versatile, thermally stable and economically effective corrosion inhibition treatment for copper (Cu) metal and selected metals surface through a single step chemical vapor deposition (CVD) of selected inhibitor compounds at temperatures as low as 100-200 C. is described in this invention. The resulting CVD deposited inhibition coating is thermally stable to 300 C. and protects Cu and selected metals from active corrosion in various technologically important operational environments. The selective coating for copper metal is achieved by controlling the chemistry of bonding between the Copper metal surface and inhibitor material used. The technique can be accomplished by using one or more inhibitors separately or in combination in order to create an all-terrain stable & robust corrosion prevention coating for copper metal.

A method for manufacturing a bonding wire includes: putting a surface layer metal of a bonding wire in a crucible having a die cooler provided at the lower part thereof and melting the same; putting a main component metal core of the bonding wire in a core guide located at the upper part of the die cooler of the crucible and heating the core guide to the melting point or below of the metal core; transferring the metal core toward the die cooler so as to allow the molten surface layer metal to be injected to the surface of the metal core; and manufacturing a 50 m to 350 m bonding wire from the cast wire precursor by using a drawing die.

The semiconductor device manufacturing method includes a bonding step of bonding a wire to an electrode (35a), a looping wire formation step of looping the wire from the electrode (35a) to a dummy electrode (34) to form a looping wire (50a), a pressing step of pressing a part of the wire, a moving step of moving the pressed part of the wire directly above the electrode, a wire separation step of separating the wire partially from a wire supply to form a pin wire (55a) extending vertically upward from the electrode (35a), wherein the looping wire formation step adjusts the looping height of the wire to set the length of the looping wire to a predetermined length.

A process to fabricate ultra-fine grain metal wire, comprising: inserting a plurality of metal strands into a flexible elastic polyurethane sheath having an accommodating slot for each of the strands of metal to form a sheathed strand assembly; equal channel angular pressing (ECAP pressing) the sheathed strand assembly through an ECAP die having a plurality of die channels corresponding to the plurality of metal strands. The process is designed to improve electric conductance and mechanical properties of elongated metal parts and is especially applicable to optimize the conductance and tensile strength of copper cables, wires, strings, and rods.