A method of fabricating a bridged multi-chip assembly structure includes providing a carrier substrate. The method further includes arranging a plurality of chips on the carrier substrate in a predetermined layout. Each chip has a front surface including a set of terminals formed thereon. The method further includes depositing a molding material between the plurality of chips and on the carrier substrate. The method further includes removing the carrier substrate from the plurality of chips fixed by the molding material. The method further includes bonding a bridge chip to corresponding sets of terminals of at least two chips of the plurality of chips fixed by the molding material.

A support substrate includes an insulating core layer, an electrically conductive layer over the insulating core layer and a solder mask layer over the electrically conductive layer. A back side of an integrated circuit chip is mounted to an upper surface of the support substrate at a die attach location. The upper surface of the support substrate includes a cavity located within the die attach location, where the cavity extends under the back side of the integrated circuit chip. The cavity is defined by an area where the solder mask layer and at least a portion of the electrically conductive layer have been removed. Bonding wires connect connection pads on a front side of the integrated circuit chip to connection pad on the upper surface of the support substrate.

A hybrid embedded packaging structure and a manufacturing method thereof are disclosed. The structure includes: a substrate with a first insulating layer, a conductive copper column, a chip-embedded cavity and a first circuit layer; a first electronic device arranged inside the chip-embedded cavity; a second electronic device arranged on a back surface of the first electronic device; a second insulating layer covering and filling the chip-embedded cavity and an upper layer of the substrate, exposing part of the first circuit layer and a back surface of part of the second electronic device or part of the first electronic device; a second circuit layer electrically connected with the conductive copper column and a terminal of the first electronic device; a conducting wire electrically connecting the first circuit layer with a terminal of the second electronic device; and a protection cover arranged on the top surface of the substrate.

A semiconductor package includes a semiconductor package includes first, second, third and fourth semiconductor chips sequentially stacked on one another. Each of the first, second, third and fourth semiconductor chips includes a first group of bonding pads and a second group of bonding pads alternately arranged in a first direction and input/output (I/O) circuitry selectively connected to the first group of bonding pads respectively. Each of the first, second and third semiconductor chips includes a first group of through electrodes electrically connected to the first group of bonding pads and a second group of through electrodes electrically connected to the second group of bonding pads.

A semiconductor package includes a logic die surrounded by a molding compound; a memory die disposed in proximity to the logic die; a plurality of vias around the logic die for electrically connecting the logic die to the memory die. Each of the plurality of vias has an oval shape or a rectangular shape when viewed from above. The vias have a horizontal pitch along a first direction and a vertical pitch along a second direction. The vertical pitch is greater than the horizontal pitch.

The present invention provides a QFN packaging structure and QFN packaging method. The electromagnetic shielding layer as provided on the outer side of the QFN packaging structure by spacing at a certain interval from the leads may cooperate with the base island having the lug boss on the side edge, such that all surfaces of the chip can be electromagnetically shielded and protected while ensuring the insulation between the electromagnetic shielding layer and the leads.

A display device includes a substrate, a first light-emitting element, a second light-emitting element, and a third light-emitting element on the substrate, each of the first, second, and third light-emitting elements includes a first semiconductor layer, an active layer, a second semiconductor layer, and a third semiconductor layer, an opening formed in the second semiconductor layer and the third semiconductor layer of the third light-emitting element, and a wavelength conversion member located at the opening, wherein the first light-emitting element and the third light-emitting element are configured to emit first light, and the second light-emitting element is configured to emit second light, and the wavelength conversion member is configured to convert the first light from the third light-emitting element into third light.

A display device and method for fabrication thereof includes a plurality of pixel electrodes and common electrode connection parts that are spaced from each other on a first substrate, a plurality of light emitting elements on the plurality of pixel electrodes, a plurality of common electrode elements on the common electrode connection parts, and a common electrode layer on the plurality of light emitting elements and the plurality of common electrode elements, wherein each of the plurality of light emitting element includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, each of the plurality of common electrode elements includes at least the second semiconductor layer, and the common electrode layer includes a same material as the second semiconductor layer to be connected to the second semiconductor layers of the plurality of light emitting elements.

A display device and method for fabrication thereof are provided. The display device includes a first substrate, pixel electrodes on the first substrate, light emitting elements respectively on the pixel electrodes, and including first semiconductor layers, second semiconductor layers, active layers respectively between the first semiconductor layers and the second semiconductor layers, a first light emitting element including a first active layer of the active layers, a second light emitting element including a second active layer of the active layers that is different from the first active layer, a third light emitting element including a third active layer of the active layers that is different from the first and second active layers, and a fourth light emitting element including a fourth active layer of the active layers that is different from the first to third active layers, and a common electrode layer on the light emitting elements.

A semiconductor module includes at least two semiconductor elements connected in parallel; a control circuit board placed between the at least two semiconductor elements; a control terminal for external connection; a first wiring member that connects the control terminal and the control circuit board; and a second wiring member that connects a control electrode of one of the at least two semiconductor elements and the control circuit board, wherein the second wiring member is wire-bonded from the control electrode towards the control circuit board, and has a first end on the control electrode and a second end on the control circuit board, the first end having a cut end face facing upward normal to a surface of the control electrode and the second end having a cut end face facing sideways parallel to a surface of the control circuit board.