An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode; a third electrode; a photoelectric conversion layer; and a semiconductor layer. The first electrode and the second electrode are disposed in parallel. The third electrode is disposed to be opposed to the first electrode and the second electrode. The photoelectric conversion layer is provided between the first electrode and second electrode and the third electrode. The semiconductor layer is provided between the first electrode and second electrode and the photoelectric conversion layer. The semiconductor layer has a first layer and a second layer stacked therein in order from the photoelectric conversion layer side. The second layer has an energy level at a lowest edge of a conduction band that is shallower than an energy level of the first layer at a lowest edge of a conduction band.

An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode; a third electrode; a photoelectric conversion layer; and a semiconductor layer. The first electrode and the second electrode are disposed in parallel. The third electrode is disposed to be opposed to the first electrode and the second electrode. The photoelectric conversion layer is provided between the first electrode and second electrode and the third electrode. The semiconductor layer is provided between the first electrode and second electrode and the photoelectric conversion layer. The semiconductor layer has a first layer and a second layer stacked therein in order from the photoelectric conversion layer side. The second layer has an energy level at a lowest edge of a conduction band that is shallower than an energy level of the first layer at a lowest edge of a conduction band.

Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

Provided are a light-emitting panel and a display device. The light-emitting panel includes a driving substrate and a plurality of light-emitting elements. The driving substrate includes a base substrate, a plurality of driver circuits, and a plurality of photoelectric conversion units. The driver circuits and the photoelectric conversion units are located on the base substrate. A photoelectric conversion unit includes a first doped region and a second doped region. The light-emitting elements are located on a side of the driving substrate. The orthographic projection of a light-emitting element among at least part of the light-emitting elements on the driving substrate is a first projection. An orthographic projection of the photoelectric conversion unit on the driving substrate is located between two adjacent first projections. A driver circuit and the photoelectric conversion unit are each electrically connected to the light-emitting element.

Provided are a light-emitting panel and a display device. The light-emitting panel includes a driving substrate and a plurality of light-emitting elements. The driving substrate includes a base substrate, a plurality of driver circuits, and a plurality of photoelectric conversion units. The driver circuits and the photoelectric conversion units are located on the base substrate. A photoelectric conversion unit includes a first doped region and a second doped region. The light-emitting elements are located on a side of the driving substrate. The orthographic projection of a light-emitting element among at least part of the light-emitting elements on the driving substrate is a first projection. An orthographic projection of the photoelectric conversion unit on the driving substrate is located between two adjacent first projections. A driver circuit and the photoelectric conversion unit are each electrically connected to the light-emitting element.

Systems and methods are provided for identifying and locating a plurality of reflector markers implanted within a target tissue region within a patient's body. A probe is provided that is activated to transmit electromagnetic signals into the patient's body, receive reflected signals from the patient's body, and in synchronization with transmitting the electromagnetic signals, deliver light pulses into the patient's body. The markers reflector tags modulate reflected signals from the respective markers based on orthogonal code sequences opening and closing respective switches of the markers to modulate the reflective properties of the markers. The probe processes the return signals to separate the reflected signals based at least in part on the code sequences to identify and locate each of the plurality of reflector tags substantially simultaneously.

Systems and methods are provided for identifying and locating a plurality of reflector markers implanted within a target tissue region within a patient's body. A probe is provided that is activated to transmit electromagnetic signals into the patient's body, receive reflected signals from the patient's body, and in synchronization with transmitting the electromagnetic signals, deliver light pulses into the patient's body. The markers reflector tags modulate reflected signals from the respective markers based on orthogonal code sequences opening and closing respective switches of the markers to modulate the reflective properties of the markers. The probe processes the return signals to separate the reflected signals based at least in part on the code sequences to identify and locate each of the plurality of reflector tags substantially simultaneously.

The present disclosure provides a broadband dual-polarized solar cell antenna and an antenna array. The broadband dual-polarized solar cell antenna includes an antenna dipole layer, an isolation layer, a solar cell layer, and a ground that are arranged sequentially from top to bottom, where the antenna dipole layer is connected to the ground and a radio frequency (RF) coaxial connector through a metal feeding probe structure, the solar cell layer is placed on the ground, the isolation layer is located between the antenna dipole layer and the solar cell layer, and the isolation layer is made of a transparent material. The present disclosure is small in sunlight shielding and high in transparency, and has a broadband dual-polarized wide-angle scanning capability, which ensures performance of the antenna and power generation efficiency of the solar cell, and is highly applicable in engineering.

The present disclosure provides a broadband dual-polarized solar cell antenna and an antenna array. The broadband dual-polarized solar cell antenna includes an antenna dipole layer, an isolation layer, a solar cell layer, and a ground that are arranged sequentially from top to bottom, where the antenna dipole layer is connected to the ground and a radio frequency (RF) coaxial connector through a metal feeding probe structure, the solar cell layer is placed on the ground, the isolation layer is located between the antenna dipole layer and the solar cell layer, and the isolation layer is made of a transparent material. The present disclosure is small in sunlight shielding and high in transparency, and has a broadband dual-polarized wide-angle scanning capability, which ensures performance of the antenna and power generation efficiency of the solar cell, and is highly applicable in engineering.