An optical sensor includes a substrate having a plurality of first light receiving elements in a surface, and a light blocking film having a plurality of first openings. The first light receiving elements are provided such that a direction of travel of incident light defined by each of the first openings is different from a thickness direction of the substrate and form at least one light receiving element set in which an angle of incidence defined between the direction of travel of the incident light and the thickness direction is the same with respect to the light receiving elements. In a view projected in the thickness direction, a positional relationship between the first light receiving elements included in a light receiving element set and the corresponding first openings has rotational symmetry of order 3 or more about an axis along the thickness direction.

An integrated circuit structure including a substrate having an upper surface; a gallium nitride layer disposed on the upper surface of the substrate; and a photoconductive semiconductor switch laterally disposed alongside a transistor on the gallium nitride layer integrated into the integrated circuit structure; an EMF shield enclosing the substrate, the gallium nitride layer and the photoconductive semiconductor switch laterally disposed alongside the transistor on the gallium nitride layer integrated into the integrated circuit structure; and a signal line electronically coupled with the photoconductive semiconductor switch, the signal line penetrating the EMF shield.

An integrated circuit structure including a substrate having an upper surface; a gallium nitride layer disposed on the upper surface of the substrate; and a photoconductive semiconductor switch laterally disposed alongside a transistor on the gallium nitride layer integrated into the integrated circuit structure; an EMF shield enclosing the substrate, the gallium nitride layer and the photoconductive semiconductor switch laterally disposed alongside the transistor on the gallium nitride layer integrated into the integrated circuit structure; and a signal line electronically coupled with the photoconductive semiconductor switch, the signal line penetrating the EMF shield.

A photodetector including: a semiconductor substrate including therein a photoelectric conversion section; a scattering structure provided cyclically on the semiconductor substrate on a side of an incident surface of light; and a prism-shaped on-chip lens provided further on the scattering structure on a side of an incident surface of the light, and having a planar incident surface of the light.

The present invention provides a normal-incident photodiode structure with a dark current self-compensation function, including a photosensitive photodiode and a compensating photodiode, where a photosensitive surface of the compensating photodiode is provided with a light-blocking layer, and dark currents of the photosensitive photodiode and the compensating photodiode are equal. According to the present invention, the dark current self-compensation function may be implemented at a chip level without an external circuit and an operational amplifier; the normal-incident photodiode structure according to the present invention has the photosensitive photodiode and the compensating photodiode, and the compensating photodiode may counteract the dark current of the photosensitive photodiode during operation, thus reducing noise caused by the dark current of the photosensitive photodiode; and bias voltages of the photosensitive photodiode and the compensating photodiode according to the present invention are controlled separately, and thus may be applied to more usage scenarios.

Provided is a semiconductor element capable of inspecting a plurality of wires formed in parallel. A semiconductor element according to an embodiment includes: a first circuit (45B) connected to a first position of each of a plurality of wires of a first wire group (31) including the plurality of wires; a second circuit (45A) connected to a second position corresponding to an end of each of the plurality of wires; and a plurality of connection units (43) that connects a third circuit (14) with each of the plurality of wires, the plurality of connection units (43) being provided on a one-to-one basis to the plurality of wires between the first position and the second position of each of the plurality of wires.

The present invention provides a photosensitive composition with which a cured film having excellent patterning properties and excellent electrode anticorrosion properties can be produced. In addition, it also provides a cured film formed of the photosensitive composition, a color filter, a light shielding film, an optical element, a solid-state imaging element, an infrared sensor, and a headlight unit.

The photosensitive composition of the present invention contains a zirconium nitride-based particle containing one or more selected from the group consisting of zirconium nitride and zirconium oxynitride a resin, a polymerizable compound, and a photopolymerization initiator, in which the zirconium nitride-based particle contains 0.001% to 0.400% by mass of a Fe atom with respect to a total mass of the zirconium nitride-based particle.

The present disclosure relates to a photodiode device, which overcomes the drawbacks of conventional devices like increased dark currents. The photodiode device includes a semiconductor substrate, at least one doped well of a first type of electric conductivity at a main surface of the substrate and at least one doped region of a second type of electric conductivity being adjacent to the doped well. The at least one doped well and the at least one doped region are electrically contactable. On a portion of an upper surface of the doped well a protection structure is arranged. The protection structure protects the upper surface of the underlying doped well from an etching process for removing a spacer layer.

An image sensor comprises a plurality of pixels, and signals are read out in units of rows. The plurality of pixels comprise a plurality of microlenses, and for each microlense, a pair of first semiconductor regions formed at a first depth; a pair of second semiconductor regions formed at a second depth deeper than the first depth; and a plurality of connecting regions that connect the first semiconductor regions and the second semiconductor regions, respectively. Pixels having a first arrangement have the first and second semiconductor regions arranged in a row direction, pixels having a second arrangement have the first semiconductor regions arranged in a column direction and the second semiconductor regions arranged in the row direction. A crosstalk ratio between the first semiconductor regions in the second arrangement is made smaller than that in the first arrangement.

Thin-film devices, for example electrochromic devices for windows, and methods of manufacturing are described. Particular focus is given to methods of patterning optical devices. Various edge deletion and isolation scribes are performed, for example, to ensure the optical device has appropriate isolation from any edge defects. Methods described herein apply to any thin-film device having one or more material layers sandwiched between two thin film electrical conductor layers. The described methods create novel optical device configurations.