H01L29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
H01L29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
H01L29/02
Semiconductor bodies; ; Multistep manufacturing processes therefor
H01L29/02
Semiconductor bodies; ; Multistep manufacturing processes therefor
H01L29/06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; ; characterised by the concentration or distribution of impurities within semiconductor regions
H01L29/06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; ; characterised by the concentration or distribution of impurities within semiconductor regions
H01L29/10
with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L29/10
with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
H01L29/1033
with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
H01L29/1033
with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure