H01L29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
H01L29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
H01L29/40
Electrodes; ; Multistep manufacturing processes therefor
H01L29/40
Electrodes; ; Multistep manufacturing processes therefor
H01L29/43
characterised by the materials of which they are formed
H01L29/43
characterised by the materials of which they are formed
H01L29/49
Metal-insulator-semiconductor electrodes,; e.g. gates of MOSFET
H01L29/49
Metal-insulator-semiconductor electrodes,; e.g. gates of MOSFET