An electronic component (10) is formed by a semiconductor component or a semiconductor-like structure having gate electrode assemblies (16, 18), for initializing the quantum mechanical state of a qubit.

An electronic component (10) is formed by a semiconductor component or a semiconductor-like structure having gate electrode assemblies (16, 18), for reading out the quantum state of a qubit in a quantum dot (42). The electronic component (10) comprises a substrate (12) having a two-dimensional electron gas or electron hole gas. Electrical contacts connect the gate electrode assemblies (16, 18) to voltage sources. The gate electrode assemblies (16, 18) have gate electrodes (20, 22, 30, 32, 34, 38, 40), which are arranged on a surface (14) of the electronic component (10), for producing potential wells (46, 48, 62, 64, 66) in the substrate (12).

An electronic component (10) is formed by a semiconductor component or a semiconductor-like structure having gate electrode assemblies (16, 18), for initializing the quantum mechanical state of a qubit.

An electronic component is formed by a semiconductor component or a semiconductor-like structure having gate electrode assemblies for manipulating the quantum state of qubits in quantum dots. It comprises a substrate comprising a two-dimensional electron gas or electron hole gas. Electrical contacts connect the gate electrode assemblies to voltage sources. A first gate electrode assembly having gate electrodes is arranged on a surface of the electronic component to generate movable potential wells in the substrate. A second gate electrode assembly serves to generate a potential barrier, which is adjacent to the first gate electrode assembly. The gate electrode assemblies have parallel electrode fingers, whereby the electrode fingers of the first gate electrode assembly are periodically and alternately interconnected in order to effect an almost continuous movement of the potential wells through the substrate.

An electronic component (10) is formed by a semiconductor component or a semiconductor-like structure having gate electrode assemblies (16, 18, 20) for moving a quantum dot (52). The electronic component (10) comprises a substrate (12) having a two-dimensional electron gas or electron hole gas. Electrical contacts connect the gate electrode assemblies (16, 18, 20) to voltage sources. A first gate electrode assembly (16) having gate electrodes (22, 24), which is arranged on a surface (14) of the electronic component in order to produce a potential well (50) in the substrate (12). The gate electrode assembly (16) has parallel electrode fingers (32, 34), wherein the electrode fingers (32, 34) are interconnected in a periodically alternating manner, which causes an almost continuous movement of the potential well (50) through the substrate (12), whereby a quantum dot (52) is transported in one direction together with this potential well (50).

An electronic structure component (10, 110, 210, 310, 410) for logically connecting qubits of a quantum computer is formed by a semiconductor component or a semiconductor-like structure. It comprises a substrate (12) with a two-dimensional electron gas or electron hole gas and gate electrode assemblies (116, 118, 120) having gate electrodes (122, 124, 126, 128), which are arranged on a surface (14) of the electronic structure component (10, 110, 210, 310, 410). Electrical contacts connect the gate electrode assemblies (116, 118, 120) to voltage sources. The gate electrodes (122, 124, 126, 128) of the gate electrode assemblies (116, 118, 120) have parallel electrode fingers (132, 134, 136, 138).

An electronic component (10, 110) is designed as a semiconductor or with a semiconductor-like structure for moving a quantum dot (68, 168) over a distance. The electronic component (10, 110) comprises a substrate (32, 132) having a two-dimensional electron gas or electron hole gas. A gate electrode assembly (16, 18, 20, 116, 118, 120) having gate electrodes (38, 40, 42, 44, 138, 140, 142, 144) is arranged on a surface (31, 131) of the electronic component (10, 110). The gate electrode assembly (16, 18, 20, 116, 118, 120) produces a potential well (66, 166) in the substrate (32, 132). Electrical terminals for connecting the gate electrode assembly (16, 18, 20, 116, 118, 120) to voltage sources are provided for this purpose. The disclosure further relates to a method for such an electronic component (10, 110).

A two-terminal device (TTD) capable of preventing leakage current by using diffusion current having bidirectionality and generated due to a potential barrier by an insulator, and a lighting device using the TTD are disclosed.

A two-terminal device (TTD) capable of preventing leakage current by using diffusion current having bidirectionality and generated due to a potential barrier by an insulator, and a lighting device using the TTD are disclosed.

Some embodiments include a method of forming integrated circuitry. A structure has first conductive lines over a dielectric bonding region, has semiconductor material pillars extending upwardly from the first conductive lines, and has second conductive lines over the first conductive lines and extending along sidewalls of the semiconductor material pillars. The first conductive lines extend along a first direction, and the second conductive lines extend along a second direction which intersects the first direction. The structure includes semiconductor material under the dielectric bonding region. Memory structures are formed over the semiconductor material pillars. The memory structures are within a memory array. Third conductive lines are formed over the memory structures. The third conductive lines extend along the first direction. Individual memory structures of the memory array are uniquely addressed through combinations of the first, second and third conductive lines.