A diode is formed by a polycrystalline silicon bar which includes a first doped region with a first conductivity type, a second doped region with a second conductivity type and an intrinsic region between the first and second doped regions. A conductive layer extends parallel to the polycrystalline silicon bar and separated from the polycrystalline silicon bar by a dielectric layer. The conductive layer is configured to be biased by a bias voltage.

A diode is formed by a polycrystalline silicon bar which includes a first doped region with a first conductivity type, a second doped region with a second conductivity type and an intrinsic region between the first and second doped regions. A conductive layer extends parallel to the polycrystalline silicon bar and separated from the polycrystalline silicon bar by a dielectric layer. The conductive layer is configured to be biased by a bias voltage.

A high-voltage fast-avalanche diode, being a silicon-avalanche shaper or sharpener (SAS), has a thick active region above 300 microns in thickness.

A method for manufacturing an epitaxial wafer comprising a silicon carbide substrate and a silicon carbide voltage-blocking-layer, the method includes: epitaxially growing a buffer layer on the substrate, doping a main dopant for determining a conductivity type of the buffer layer and doping an auxiliary dopant for capturing minority carriers in the buffer layer at a doping concentration less than the doping concentration of the main dopant, so that the buffer layer enhances capturing and extinction of the minority carriers, the minority carriers flowing in a direction from the voltage-blocking-layer to the substrate, so that the buffer layer has a lower resistivity than the voltage-blocking-layer, and so that the buffer layer includes silicon carbide as a main component; and epitaxially growing the voltage-blocking-layer on the buffer layer.

A method for manufacturing an epitaxial wafer comprising a silicon carbide substrate and a silicon carbide voltage-blocking-layer, the method includes: epitaxially growing a buffer layer on the substrate, doping a main dopant for determining a conductivity type of the buffer layer and doping an auxiliary dopant for capturing minority carriers in the buffer layer at a doping concentration less than the doping concentration of the main dopant, so that the buffer layer enhances capturing and extinction of the minority carriers, the minority carriers flowing in a direction from the voltage-blocking-layer to the substrate, so that the buffer layer has a lower resistivity than the voltage-blocking-layer, and so that the buffer layer includes silicon carbide as a main component; and epitaxially growing the voltage-blocking-layer on the buffer layer.

A semiconductor device includes a cooling base board and an insulated circuit substrate. On a front surface of an insulated board on the insulated circuit substrate, a high potential circuit pattern on which a semiconductor chip is mounted, an intermediate potential circuit pattern on which a semiconductor chip is mounted, a low potential circuit pattern, and a control circuit pattern are disposed so as to straddle a center line of the cooling base board. The intermediate potential circuit pattern includes a second chip mounting region, an output wiring connection region and an interconnect wiring region that form a U-shaped portion in which the high potential circuit pattern having a semiconductor chip thereon is disposed. The control circuit pattern is disposed so as to straddle the center line and faces the opening of the U-shaped portion.

The present disclosure has an object of providing a silicon carbide semiconductor device with high productivity which prevents characteristic degradation occurring when a large current is applied to a body diode. A structure including a SiC substrate, a buffer layer, and a drift layer is classified into an active region through which a current flows with application of a voltage to the SiC-MOSFET, and a breakdown voltage support region around a periphery of the active region in a plan view. The active region is classified into a first active region in a center portion, and a second active region between the first active region and the breakdown voltage support region in the plan view. Lifetimes of minority carriers in the second active region and the breakdown voltage support region are shorter than that in the first active region.

The present disclosure has an object of providing a silicon carbide semiconductor device with high productivity which prevents characteristic degradation occurring when a large current is applied to a body diode. A structure including a SiC substrate, a buffer layer, and a drift layer is classified into an active region through which a current flows with application of a voltage to the SiC-MOSFET, and a breakdown voltage support region around a periphery of the active region in a plan view. The active region is classified into a first active region in a center portion, and a second active region between the first active region and the breakdown voltage support region in the plan view. Lifetimes of minority carriers in the second active region and the breakdown voltage support region are shorter than that in the first active region.

A sensing device has a sensing area, a pad area, and a peripheral area, and the pad area is located between the sensing area and the peripheral area, including: a sensing element, a pad, and a metal strip. The sensing element is located in the sensing area. The pad is located in the pad area and electrically connected to the sensing element. The metal strip is located in the peripheral area, and an extending direction of the metal strip is parallel to an extending direction of the pad.

A sensing device has a sensing area, a pad area, and a peripheral area, and the pad area is located between the sensing area and the peripheral area, including: a sensing element, a pad, and a metal strip. The sensing element is located in the sensing area. The pad is located in the pad area and electrically connected to the sensing element. The metal strip is located in the peripheral area, and an extending direction of the metal strip is parallel to an extending direction of the pad.