A terahertz element of an aspect of the present disclosure includes a semiconductor substrate, first and second conductive layers, and an active element. The first and second conductive layers are on the substrate and mutually insulated. The active element is on the substrate and electrically connected to the first and second conductive layers. The first conductive layer includes a first antenna part extending along a first direction, a first capacitor part offset from the active element in a second direction as viewed in a thickness direction of the substrate, and a first conductive part connected to the first capacitor part. The second direction is perpendicular to the thickness direction and first direction. The second conductive layer includes a second capacitor part, stacked over and insulated from the first capacitor part. The substrate includes a part exposed from the first and second capacitor parts. The first conductive part has a portion spaced apart from the first antenna part in the second direction with the exposed part therebetween as viewed in the thickness direction.

A terahertz device includes an antenna base including reflective films, wherein: the reflective films are curved to be recessed; the reflective film and the reflective film are arranged to be adjacent to each other in a y direction; and when viewed from a z direction, the sizes of the reflective film and the reflective film along an x direction are smaller than the sizes of the reflective film and the reflective film along the y direction.

An object of the present invention is to provide a terahertz oscillator that does not have an MIM capacitor structure of which producing is intricacy, and oscillates due to resonance of an RTD and stabilizing resistors. The present invention is a terahertz oscillator, wherein a slot antenna having a slot is formed between a first electrode plate and a second electrode plate which are applied a bias voltage, stabilizing resistors to respectively connect to the first electrode plate and the second electrode plate are provided in the slot, an RTD is provided on the second electrode plate through a mesa, and a conductive material member to form an air bridge between the first electrode plate and the mesa is provided, and wherein an oscillation in a terahertz frequency band is obtained due to a resonance of the RTD and the stabilizing resistors.

A physically unclonable function (PUF) device 1 capable of exhibiting a unique quantum mechanical effect as a result of quantum mechanical confinement exhibited by the device 1. The device 1 comprises a group IV semiconductor heterostructure. The group IV semiconductor heterostructure may comprise Silicon/Germanium. The device 1 may comprise a group IV semiconductor resonant tunnelling diode (RTD). A Si-integrated circuit, method, use, and apparatus are also provided.

An apparatus comprising: a fermion source nanolayer (90); a first insulating nanolayer (92); a fermion transport nanolayer (94); a second insulating nanolayer (96); a fermion sink nanolayer (98); a first contact for applying a first voltage to the fermion source nanolayer; a second contact for applying a second voltage to the fermion sink nanolayer; and a transport contact for enabling an electric current via the fermion transport nanolayer. In a particular example, the apparatus comprises three graphene sheets (90, 94, 98) interleaved with two-dimensional Boron-Nitride (hBN) layers (92, 96).

Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.

An oscillator oscillating a tera hertz wave includes a negative resistive element including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, with a first conductor, a second conductor, and a dielectric disposed between the first conductor and the second conductor constitutes a resonator, wherein the negative resistive element is disposed between the first conductor and the second conductor, and a layer with a higher resistivity than the first semiconductor layer or the second semiconductor layer, or an amorphous layer is disposed between the negative resistive element and the dielectric.

A terahertz element of an aspect of the present disclosure includes a semiconductor substrate, first and second conductive layers, and an active element. The first and second conductive layers are on the substrate and mutually insulated. The active element is on the substrate and electrically connected to the first and second conductive layers. The first conductive layer includes a first antenna part extending along a first direction, a first capacitor part offset from the active element in a second direction as viewed in a thickness direction of the substrate, and a first conductive part connected to the first capacitor part. The second direction is perpendicular to the thickness direction and first direction. The second conductive layer includes a second capacitor part, stacked over and insulated from the first capacitor part. The substrate includes a part exposed from the first and second capacitor parts. The first conductive part has a portion spaced apart from the first antenna part in the second direction with the exposed part therebetween as viewed in the thickness direction.

Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.

The task of the present invention is to achieve gain enhancement. A terahertz device (10) of the present invention includes a terahertz element (20) generating an electromagnetic wave, a dielectric (50) including a dielectric material and surrounding the terahertz element (20), a gas space (92) including a gas, and a reflecting film (82) serving as a reflecting portion. The reflecting film (82) includes a portion opposing the terahertz element (20) through the dielectric (50) and the gas space (92) and reflecting the electromagnetic wave toward a direction, wherein the electromagnetic wave is generated from the terahertz element (20) and transmitted through the dielectric (50) and the gas space (92). In addition, the refractive index of the dielectric (50) is lower than the refractive index of the terahertz element (20) and is higher than the refractive index of the gas in the gas space (92).