A biosensor that can perform analysis based on a sample noninvasively collected from a human body is provided. The biosensor comprises an identification substance (38) that binds to a substance to be detected (40), and an electrode (16) charged with a charge of the identification substance (38), comprises an inhibitor (39) that inhibits a substance not to be detected (42) from attaching to at least one of the identification substance (38) and the electrode (16), and detects a change in a charge density of the electrode (16) caused by binding of the substance to be detected (40) to the identification substance (38).

A method for manufacturing a pressure sensitive transistor includes forming a channel region between first and second contact regions in a semiconductor substrate, forming a first isolation layer on a surface of the semiconductor substrate, forming a sacrificial structure on the first isolation layer and above the channel region, forming a semiconductor layer on the sacrificial structure and on the first isolation layer, wherein the semiconductor layer covers the sacrificial structure, removing the sacrificial structure for providing a cavity between the substrate and the semiconductor layer, wherein the semiconductor layer forms a membrane structure and forms a control electrode of the pressure sensitive transistor, forming a second isolation layer on the membrane structure and on the exposed portion of the surface of the semiconductor substrate, and forming contacting structures for the first contact region, the second contact region and the membrane structure of the pressure sensitive transistor.

A method of producing a semiconductor device includes providing a carrier structure having a semiconductor substrate; applying or introducing a precursor substance onto or into the carrier structure, treating the precursor substance for producing a porous matrix structure; introducing a functionalization substance into the porous matrix structure.

A biosensor that can perform analysis based on a sample noninvasively collected from a human body is provided. The biosensor comprises an identification substance (38) that binds to a substance to be detected (40), and an electrode (16) charged with a charge of the identification substance (38), comprises an inhibitor (39) that inhibits a substance not to be detected (42) from attaching to at least one of the identification substance (38) and the electrode (16), and detects a change in a charge density of the electrode (16) caused by binding of the substance to be detected (40) to the identification substance (38).

A biosensor that can perform analysis based on a sample noninvasively collected from a human body is provided. The biosensor comprises an identification substance (38) that binds to a substance to be detected (40), and an electrode (16) charged with a charge of the identification substance (38), comprises an inhibitor (39) that inhibits a substance not to be detected (42) from attaching to at least one of the identification substance (38) and the electrode (16), and detects a change in a charge density of the electrode (16) caused by binding of the substance to be detected (40) to the identification substance (38).

This invention aims at providing a chemical sensor and a detection apparatus each of which can control a threshold voltage and achieve improvement in an electric-charge retention characteristic.

A chemical sensor provides: a sensitive portion having a sensitive membrane sensitive to a chemical substance; a transistor having a floating gate and a gate insulating film; and a first potential controlling portion configured to control a potential of the floating gate in accordance with a voltage applied to the sensitive membrane. The first potential controlling portion has: a P-well region connected to the sensitive portion via a wiring line; a control insulating film formed to make contact with the P-well region; and a control floating portion placed at a position where the control floating portion faces the P-well region across the control insulating film, the control floating portion being conductive with the floating gate. A capacitance of the sensitive membrane is larger than a series combined capacitance of respective capacitances of the gate insulating film and the control insulating film.

A semiconductor device includes a first passivation layer disposed on a semiconductor base. The semiconductor device further includes a dielectric layer disposed on the first passivation layer. The semiconductor device further includes a plurality of pillars disposed in an opening in the dielectric layer and the first passivation layer and from a top surface of the semiconductor base. The semiconductor device further includes a metal layer disposed on the exterior surfaces of the plurality of pillars and sidewalls of the dielectric layer and the first passivation layer and on the exposed top surface of the semiconductor base. The semiconductor device further includes a second passivation layer disposed on the metal layer and a top surface of the semiconductor device; wherein the second passivation layer has an electrical charge.

A semiconductor device includes a first passivation layer disposed on a semiconductor base. The semiconductor device further includes a dielectric layer disposed on the first passivation layer. The semiconductor device further includes a plurality of pillars disposed in an opening in the dielectric layer and the first passivation layer and from a top surface of the semiconductor base. The semiconductor device further includes a metal layer disposed on the exterior surfaces of the plurality of pillars and sidewalls of the dielectric layer and the first passivation layer and on the exposed top surface of the semiconductor base. The semiconductor device further includes a second passivation layer disposed on the metal layer and a top surface of the semiconductor device; wherein the second passivation layer has an electrical charge.

A method of manufacturing an electronic device comprising the steps of: preparing a substrate comprising an electrically conductive layer; applying a conductive paste on the electrically conductive layer; mounting an electrical component on the applied conductive paste; heating the conductive paste to bond the electrically conductive layer and the electrical component, wherein the conductive paste comprises 100 parts by weight of the metal powder, 5 to 20 parts by weight of a solvent, and 0.05 to 3 parts by weight of a polymer, wherein the polymer comprises a first polymer and a second polymer, wherein the molecular weight (Mw) of the first polymer is 5,000 to 95,000, and the molecular weight (Mw) of the second polymer is 100,000 to 300,000.

The present invention relates to a conductive paste for bonding comprising 100 parts by weight of the metal powder, 5 to 20 parts by weight of a solvent, and 0.05 to 3 parts by weight of a polymer, wherein the polymer comprises a first polymer and a second polymer, wherein the molecular weight (Mw) of the first polymer is 5,000 to 95,000, and the molecular weight (Mw) of the second polymer is 100,000 to 300,000.