Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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2924/00
Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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H01L2924/10
Details of semiconductor or other solid state devices to be connected
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H01L2924/13
Discrete devices, e.g. 3 terminal devices
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H01L2924/1306
Field-effect transistor [FET]
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H01L2924/13074
Electrolyte-oxide-semiconductor field effect transistor [EOSFET], e.g. Neurochip
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H01L2924/13074

Neuromorphic device with oxygen scavenging gate
11586899 · 2023-02-21 · ·

A method of fabricating a neuromorphic device includes forming a variable-resistance layer between a first terminal and a second terminal, the variable-resistance layer varies in resistance based on an oxygen concentration in the variable-resistance layer. The method further includes forming an electrolyte layer over the variable-resistance layer that is stable at room temperature and that conducts oxygen ions in accordance with an applied voltage. The method further includes forming a gate layer over the electrolyte layer to apply a voltage on the electrolyte layer and the variable-resistance layer, the gate layer formed using an oxygen scavenging material.

NEUROMORPHIC DEVICE WITH OXYGEN SCAVENGING GATE
20200387779 · 2020-12-10 ·

A method of fabricating a neuromorphic device includes forming a variable-resistance layer between a first terminal and a second terminal, the variable-resistance layer varies in resistance based on an oxygen concentration in the variable-resistance layer. The method further includes forming an electrolyte layer over the variable-resistance layer that is stable at room temperature and that conducts oxygen ions in accordance with an applied voltage. The method further includes forming a gate layer over the electrolyte layer to apply a voltage on the electrolyte layer and the variable-resistance layer, the gate layer formed using an oxygen scavenging material.