A memory device includes a package substrate and at least one stack of a plurality of semiconductor dies disposed on the package substrate. The plurality of semiconductor dies can be stacked in a shingled configuration. Each semiconductor die includes a plurality of slits disposed in a first direction. An offset direction defining the shingled arrangement is in-line with the first direction. Each semiconductor die can include a die substrate and a plurality of memory planes disposed on the die substrate with each memory plane having a memory cell array. Each slit can divide and separate each memory plane into at least one of logic blocks or sub-logic blocks. The semiconductor die can include a plurality of bond pads linearly aligned in a second direction that is perpendicular to the first direction.

A chip package may include a first polymer layer and a first semiconductor chip in the first polymer layer. The first semiconductor chip may include a first semiconductor device and a first semiconductor substrate supporting the first semiconductor device. The first semiconductor chip may also have a first contact pad coupled to the first semiconductor device. The first semiconductor chip may further include a first conductive interconnect on the first contact pad. The chip package may also include a second polymer layer on the first polymer layer and across an edge of the first semiconductor chip. The chip package may further include a first conductive layer in the second polymer layer and directly on a surface of the first conductive interconnect, and across the edge of the first semiconductor chip.

A chip package may include a first polymer layer and a first semiconductor chip in the first polymer layer. The first semiconductor chip may include a first semiconductor device and a first semiconductor substrate supporting the first semiconductor device. The first semiconductor chip may also have a first contact pad coupled to the first semiconductor device. The first semiconductor chip may further include a first conductive interconnect on the first contact pad. The chip package may also include a second polymer layer on the first polymer layer and across an edge of the first semiconductor chip. The chip package may further include a first conductive layer in the second polymer layer and directly on a surface of the first conductive interconnect, and across the edge of the first semiconductor chip.

The invention provides a semiconductor package and a method for fabricating a base for a semiconductor package. The semiconductor package includes a base. The base has a device-attach surface. A radio-frequency (RF) device is embedded in the base. The RF device is close to the device-attach surface.

A semiconductor substrate includes a dielectric layer, a first conductive layer, a first barrier layer and a conductive post. The dielectric layer has a first surface and a second surface opposite to the first surface. The first conductive layer is disposed adjacent to the first surface of the dielectric layer. The first barrier layer is disposed on the first conductive layer. The conductive post is disposed on the first barrier layer. A width of the conductive post is equal to or less than a width of the first barrier layer.

A packaged semiconductor chip includes a power amplifier die including a semiconductor substrate, and an input contact pad, an output contact pad, first and second direct-current (DC) contact pads, one or more transistors having an input coupled to the input contact pad, and an input bias coupling path electrically coupling the first DC contact pad to the second DC contact pad and the input contact pad implemented on the semiconductor substrate. The chip further includes a lead frame having one or more radio-frequency input pins electrically coupled to the input contact pad, one or more radio-frequency output pins electrically coupled to the output contact pad, and first and second input bias pins electrically coupled to the first and second DC contact pads, respectively.

A preferred aim of the invention is to provide technique for improving reliability of semiconductor devices when using a low-dielectric-constant film having a lower dielectric constant than a silicon oxide film to apart of an interlayer insulating film. More specifically, to achieve the preferred aim, an interlayer insulating film IL1 forming a first fine layer is formed of a middle-Young's-modulus film, and thus it is possible to separate an integrated high-Young's-modulus layer (a semiconductor substrate 1S and a contact interlayer insulating film CIL) and an interlayer insulating film (a low-Young's-modulus film; a low-dielectric-constant film) IL2 forming a second fine layer not to let them directly contact with each other, and stress can be diverged. As a result, film exfoliation of the interlayer insulating film IL2 formed of a low-Young's-modulus film can be prevented and thus reliability of semiconductor devices can be improved.

A memory device includes a package substrate and at least one stack of a plurality of semiconductor dies disposed on the package substrate. The plurality of semiconductor dies can be stacked in a shingled configuration. Each semiconductor die includes a plurality of slits disposed in a first direction. An offset direction defining the shingled arrangement is in-line with the first direction. Each semiconductor die can include a die substrate and a plurality of memory planes disposed on the die substrate with each memory plane having a memory cell array. Each slit can divide and separate each memory plane into at least one of logic blocks or sub-logic blocks. The semiconductor die can include a plurality of bond pads linearly aligned in a second direction that is perpendicular to the first direction.

The invention provides a semiconductor package and a method for fabricating a base for a semiconductor package. The semiconductor package includes a base. The base has a device-attach surface. A radio-frequency (RF) device is embedded in the base. The RF device is close to the device-attach surface.

A method for manufacturing a semiconductor device includes preparing a plurality of semiconductor elements each including a first surface on which a connection terminal is formed and a second surface on a side opposite to the first surface, preparing a support member in which a curable bonding adhesive layer is formed on a carrier, attaching the plurality of semiconductor elements to the support member such that the second surface of each of the plurality of semiconductor elements is directed toward the curable bonding adhesive layer, fixing the plurality of semiconductor elements to the support member by curing the curable bonding adhesive layer, encapsulating the plurality of semiconductor elements with an encapsulant material, and removing the carrier.