H01L2924/1617

Semiconductor device having a lid configured as an enclosure and a capacitive structure and method of manufacturing a semiconductor device

A method for forming a packaged electronic device includes providing a substrate having a first major surface and an opposing second major surface. The method includes attaching an electronic device to the first major surface of the substrate and providing a first conductive structure coupled to at least a first portion of the substrate. The method includes forming a dielectric layer overlying at least part of the first conductive structure. The method includes forming a conductive layer overlying the dielectric layer and connected to a second portion of the substrate. The first conductive structure, the dielectric layer, and conductive layer are configured as a capacitor structure and further configured as one or more of an enclosure structure or a stiffener structure for the packaged electronic device.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

A method for forming a packaged electronic device includes providing a substrate having a first major surface and an opposing second major surface. The method includes attaching an electronic device to the first major surface of the substrate and providing a first conductive structure coupled to at least a first portion of the substrate. The method includes forming a dielectric layer overlying at least part of the first conductive structure. The method includes forming a conductive layer overlying the dielectric layer and connected to a second portion of the substrate. The first conductive structure, the dielectric layer, and conductive layer are configured as a capacitor structure and further configured as one or more of an enclosure structure or a stiffener structure for the packaged electronic device.

Electromagnetic wall in millimeter-wave cavity

An apparatus includes a package, a wall and a lid. The package may be configured to mount two chips configured to generate one or more signals in a millimeter-wave frequency range. The wall may be formed between the two chips. The wall generally has a plurality of conductive arches that attenuate an electromagnetic coupling between the two chips in the millimeter-wave frequency range. The lid may be configured to enclose the chips to form a cavity.

DIE ATTACHED LEVELING CONTROL BY METAL STOPPER BUMPS
20220270999 · 2022-08-25 ·

In some embodiments, the present disclosure relates to an integrated chip (IC), including a substrate, a first die disposed over the substrate, a metal wire attached to a frontside of the first die, and a first plurality of die stopper bumps disposed along a backside of the first die and configured to control an angle of operation of the first die. The first plurality of die stopper bumps directly contacts a backside surface of the first die.

Chip on film package and heat-dissipation structure for a chip package

A chip on film package includes a base film, a chip and a heat-dissipation structure. The base film includes a first surface and a second surface opposite to the first surface. The chip is disposed on the first surface and has a chip length along a first axis of the chip and a chip width along a second axis of the chip perpendicular to the first axis. The heat-dissipation structure includes a covering portion. The covering portion at least partially covers the chip, exposes a side surface of the chip, and has a first length along the first axis and a second length along the second axis being longer than the chip width of the chip. The side surface connects a top surface and a bottom surface of the chip. A heat-dissipation structure is also provided.

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
20200194542 · 2020-06-18 · ·

A method for forming a packaged electronic device includes providing a substrate having a first major surface and an opposing second major surface. The method includes attaching an electronic device to the first major surface of the substrate and providing a first conductive structure coupled to at least a first portion of the substrate. The method includes forming a dielectric layer overlying at least part of the first conductive structure. The method includes forming a conductive layer overlying the dielectric layer and connected to a second portion of the substrate. The first conductive structure, the dielectric layer, and conductive layer are configured as a capacitor structure and further configured as one or more of an enclosure structure or a stiffener structure for the packaged electronic device.

Opto-electronic modules, in particular flash modules, and method for manufacturing the same

The opto-electronic module comprises a substrate member (P); at least one emission member (E1; E2) mounted on said substrate (P); at least one detecting member (D) mounted on said substrate (P); at least one optics member (O) comprising at least one passive optical component (L); at least one spacer member (S) arranged between said substrate member (P) and said optics member (O). The opto-electronic modules can be very small and can be produced in high quality in high volumes. In particular, at least two emission members (E1, E2), e.g., two LEDs, are provided, for emitting light of variable color. This can improve illumination of a scene.

DIE ATTACHED LEVELING CONTROL BY METAL STOPPER BUMPS
20240162183 · 2024-05-16 ·

In some embodiments, the present disclosure relates to an integrated chip including a substrate and a first die disposed over the substrate. A first plurality of die stopper bumps are disposed along a backside of the first die. The first plurality of die stopper bumps directly contact the backside of the first die, and the first plurality of die stopper bumps are arranged as a plurality of groups of die stopper bumps. A plurality of adhesive structures are also present. Each of the plurality of adhesive structures surrounds a corresponding group of the plurality of groups of die stopper bumps.

CHIP ON FILM PACKAGE AND HEAT-DISSIPATION STRUCTURE FOR A CHIP PACKAGE

A chip on film package includes a base film, a chip and a heat-dissipation structure. The base film includes a first surface and a second surface opposite to the first surface. The chip is disposed on the first surface and has a chip length along a first axis of the chip and a chip width along a second axis of the chip perpendicular to the first axis. The heat-dissipation structure includes a covering portion. The covering portion at least partially covers the chip, exposes a side surface of the chip, and has a first length along the first axis and a second length along the second axis being longer than the chip width of the chip. The side surface connects a top surface and a bottom surface of the chip. A heat-dissipation structure is also provided.

CHIP PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF

A chip package structure and a manufacturing method thereof are provided. The chip package structure includes a circuit board, a chip, a housing, an antenna pattern, a conductive line pattern and a shielding layer. The chip is disposed on the circuit board. The housing is disposed on the circuit board and covers the chip, wherein the housing includes a cover and sidewalls, and the housing contains catalyst particles. The antenna pattern is disposed on an outer surface of the cover. The conductive line pattern is disposed on an outer surface of the sidewalls and electrically connected to the antenna pattern and the circuit board. The shielding layer is disposed at least on an inner surface of the cover.