Embodiments of the present disclosure describe a die with integrated microphone device using through-silicon vias (TSVs) and associated techniques and configurations. In one embodiment, an apparatus includes an apparatus comprising a semiconductor substrate having a first side and a second side disposed opposite to the first side, an interconnect layer formed on the first side of the semiconductor substrate, a through-silicon via (TSV) formed through the semiconductor substrate and configured to route electrical signals between the first side of the semiconductor substrate and the second side of the semiconductor substrate, and a microphone device formed on the second side of the semiconductor substrate and electrically coupled with the TSV. Other embodiments may be described and/or claimed.

Disclosed herein are lids for integrated circuit (IC) packages with solder thermal interface materials (STIMs), as well as related methods and devices. For example, in some embodiments, an IC package may include a STIM between a die of the IC package and a lid of the IC package. The lid of the IC package may include nickel, the IC package may include an intermetallic compound (IMC) between the STIM and the nickel, and the lid may include an intermediate material between the nickel and the IMC.

Disclosed herein are lids for integrated circuit (IC) packages with solder thermal interface materials (STIMs), as well as related methods and devices. For example, in some embodiments, an IC package may include a STIM between a die of the IC package and a lid of the IC package. The lid of the IC package may include nickel, the IC package may include an intermetallic compound (IMC) between the STIM and the nickel, and the lid may include an intermediate material between the nickel and the IMC.

A semiconductor structure includes a free-floating silicon-bridge chip electrically joined on a top portion to two or more semiconductor chips and electrically joined on a bottom portion to a substrate structure that includes a plurality of metal interconnect structures and a plurality of metal layers disposed on an interlevel dielectric. The silicon bridge chip is aligned with and extends into a recess located in a region of the substrate structure away from the plurality of metal interconnect structures and the plurality of metal layers such that a top surface of the silicon bridge chip is substantially flush with a top surface of the substrate structure.

A semiconductor structure includes a free-floating silicon-bridge chip electrically joined on a top portion to two or more semiconductor chips and electrically joined on a bottom portion to a substrate structure that includes a plurality of metal interconnect structures and a plurality of metal layers disposed on an interlevel dielectric. The silicon bridge chip is aligned with and extends into a recess located in a region of the substrate structure away from the plurality of metal interconnect structures and the plurality of metal layers such that a top surface of the silicon bridge chip is substantially flush with a top surface of the substrate structure.

A method includes electrically joining two or more semiconductor chips to a silicon bridge chip, and electrically joining the two or more semiconductor chips to a substrate structure, the silicon bridge chip extends into a recess in the substrate structure such that a top surface of the silicon bridge chip is substantially flush with a top surface of the substrate structure.

Embodiments of the present disclosure describe a die with integrated microphone device using through-silicon vias (TSVs) and associated techniques and configurations. In one embodiment, an apparatus includes an apparatus comprising a semiconductor substrate having a first side and a second side disposed opposite to the first side, an interconnect layer formed on the first side of the semiconductor substrate, a through-silicon via (TSV) formed through the semiconductor substrate and configured to route electrical signals between the first side of the semiconductor substrate and the second side of the semiconductor substrate, and a microphone device formed on the second side of the semiconductor substrate and electrically coupled with the TSV. Other embodiments may be described and/or claimed.

A semiconductor package includes a package substrate including a fastening section at one end and a connecting terminal section at an opposite end, at least one semiconductor device mounted on the package substrate, at least one heat pipe on the at least one semiconductor device, and a lid on the at least one semiconductor device and the at least one heat pipe. At least one end of the heat pipe is between the at least one semiconductor device and either the fastening section or the connecting terminal section.

The present invention provides a heat dissipation structure that does not cause problems such as contact failures in electronic components and that is applicable to electronic components with high heat densities. The present invention also provides a method for easily repairing an electronic device. The heat dissipation structure is obtained by filling and curing a thermally conductive curable resin composition in an electromagnetic shielding case on a substrate on which an electronic component with a heat density of 0.2 W/cm.sup.2 to 500 W/cm.sup.2 is mounted, the thermally conductive curable resin composition containing a curable liquid resin (I) and a thermally conductive filler (II), having a viscosity at 23 C. of 30 Pa.Math.s to 3000 Pa.Math.s and a thermal conductivity of 0.5 W/(m.Math.K) or more, and being curable by moisture or heat.

A method includes electrically joining two or more semiconductor chips to a silicon bridge chip, and electrically joining the two or more semiconductor chips to a substrate structure, the silicon bridge chip extends into a recess in the substrate structure such that a top surface of the silicon bridge chip is substantially flush with a top surface of the substrate structure.