Disclosed is a semiconductor device including a semiconductor die, a base member, a side wall, first and second conductive films, and first and second conductive leads. The base member has a conductive main surface including a region that mounts the semiconductor die. The side wall surrounds the region and is made of a dielectric. The side wall includes first and second portions. The first and second conductive films are provided on the first and second portions, respectively and are electrically connected to the semiconductor die. The first and second conductive leads are conductively bonded to the first and second conductive films, respectively. At least one of the first and second portions includes a recess on its back surface facing the base member, and the recess defines a gap between the at least one of the first and second portions below the corresponding conductive film and the base member.

Disclosed is a package for a semiconductor device including a semiconductor die. The package includes a base member, a side wall, first and second conductive films, and first and second conductive leads. The base member has a conductive main surface including a region that mounts the semiconductor die. The side wall surrounds the region and is made of a dielectric. The side wall includes first and second portions. The first and second conductive films are provided on the first and second portions, respectively and are electrically connected to the semiconductor die. The first and second conductive leads are conductively bonded to the first and second conductive films, respectively. At least one of the first and second portions includes a recess in its back surface facing the base member, and the recess defines a gap between the at least one of the first and second portions below the corresponding conductive film and the base member.

The present disclosure relates to thin-form-factor semiconductor device packages, and methods and systems for forming the same. Embodiments of the disclosure include methods and apparatus for forming semiconductor device packages that include frames that are coated with a layer of a coupling agent on which subsequently layers are formed. The utilization of the coupling agent between the frame and subsequently formed layers enhances the thermo-mechanical reliability of the package frames by mitigating the stress induced by any subsequently formed insulation layers and/or RDLs, and by providing improved coupling between such layers and the relatively smooth surfaces of the frames.

Disclosed is a semiconductor device including a semiconductor die, a base member, a side wall, first and second conductive films, and first and second conductive leads. The base member has a conductive main surface including a region that mounts the semiconductor die. The side wall surrounds the region and is made of a dielectric. The side wall includes first and second portions. The first and second conductive films are provided on the first and second portions, respectively and are electrically connected to the semiconductor die. The first and second conductive leads are conductively bonded to the first and second conductive films, respectively. At least one of the first and second portions includes a recess on its back surface facing the base member, and the recess defines a gap between the at least one of the first and second portions below the corresponding conductive film and the base member.

Disclosed is a package for a semiconductor device including a semiconductor die. The package includes a base member, a side wall, first and second conductive films, and first and second conductive leads. The base member has a conductive main surface including a region that mounts the semiconductor die. The side wall surrounds the region and is made of a dielectric. The side wall includes first and second portions. The first and second conductive films are provided on the first and second portions, respectively and are electrically connected to the semiconductor die. The first and second conductive leads are conductively bonded to the first and second conductive films, respectively. At least one of the first and second portions includes a recess in its back surface facing the base member, and the recess defines a gap between the at least one of the first and second portions below the corresponding conductive film and the base member.

An example semiconductor package comprises a ceramic header having a first open space separated from a second open space by a ceramic barrier. A first heat sink is attached to a bottom of the ceramic header below the first open area. A first integrated circuit (IC) die is mounted on the first heat sink. A second heat sink is attached to a bottom of the ceramic header below the second open area. A second IC die is mounted on the second heat sink. A capacitive interface is disposed in the ceramic barrier between the first IC die and the second IC die. The capacitive has a plurality of capacitive elements alternating with a plurality of shielding elements. The capacitive elements are tunable over a range of capacitive values.

A package includes a base having a mounting region on which a semiconductor chip is to be mounted, a frame provided on the base so as to surround the mounting region, a first metal layer provided on an upper surface of the frame, the first metal layer including a first portion to which a first bonding wire electrically connecting the semiconductor chip is to be bonded, a second portion farther from the mounting region than the first portion, and a first connecting portion connecting the first portion to the second portion, a first insulating layer provided on the first connecting portion in contact with the first connecting portion, the first insulating layer crossing the first metal layer, and a first lead bonded on the second portion.

A package structure includes a first layer, a second layer and a third layer. The second layer includes an outer frame, a resonator and a chip. The second layer is arranged between the first layer and the third layer. The outer frame, the first layer and the third layer are constituted a rectangular accommodation portion. The resonator and the chip are located in the rectangular accommodation portion. The chip is located at a side of the resonator, and is electrically connected to the third layer and the resonator through a plurality of conductive components on the chip. A package structure in which the chip is located below the resonator is also provided.