H01L2924/1902

REDISTRIBUTION SUBSTRATE AND SEMICONDUCTOR PACKAGE INCLUDING THE SAME

Disclosed are redistribution substrates and semiconductor packages including the same. The semiconductor package comprises a redistribution substrate, a semiconductor chip mounted on the redistribution substrate, and an inductor structure in the redistribution substrate and electrically connected to the semiconductor chip. The inductor structure includes an outer coil pattern including a plurality of vertical parts and a horizontal part that connects the plurality of vertical parts to each other, and an inner coil pattern between the vertical parts and electrically connected to the outer coil pattern. The horizontal part includes a first conductive layer, and a second conductive layer between the first conductive layer and the inner coil pattern. The second conductive layer has a thickness that is less than a thickness of the first conductive layer.

HIGH FREQUENCY AMPLIFIER
20220337204 · 2022-10-20 · ·

An amplifier (T1) amplifies an input signal. A harmonic matching circuit (3) is connected to an output end of the amplifier (T1) via a first wire (W1). The harmonic matching circuit (3) includes a first inductor (L1) connected to the first wire (W1), a first capacitor (C1) connected in series to the first inductor (L1), a second inductor (L2) connected in parallel with the first inductor (L1), and a second capacitor (C2) connected in series to the second inductor (L2). The first inductor (L1) and the second inductor (L2) form a subtractive-polarity coupler which presents mutual inductance having subtractive polarity.

HIGH-POWER AMPLIFIER PACKAGE

Package assemblies for improving heat dissipation of high-power components in microwave circuits are described. A laminate that includes microwave circuitry may have cut-outs that allow high-power components to be mounted directly on a heat slug below the laminate. Electrical connections to circuitry on the laminate may be made with wire bonds. The packaging allows more flexible design and tuning of packaged microwave circuitry.

High frequency amplifier

A amplifier device includes an amplifier, a coupling circuit, and a filter circuit. The amplifier amplifies a high frequency signal, and outputs to signal output ports the high frequency signal. The coupling circuit is provided side-by-side with the amplifier in a first direction on a substrate, connected to the signal output ports, and configured to couple output signals and output one output signal to an output terminal. The filter circuit is provided on the substrate and connected to the coupling circuit, and configured to reduce third-order IMD included in the one output signal. The one output signal is output from a middle of the substrate in a second direction intersecting with the first direction, and the filter circuit is arranged next to an edge of the substrate in the second direction, and arranged next to an edge of the substrate on the output terminal side in the first direction.

Electronic package and electronic device having the electronic package

An electronic package includes: a carrier structure; a first electronic component disposed on the carrier structure; a first insulating layer formed on the carrier structure; a first antenna structure coupled to the first insulating layer and electrically connected to the first electronic component; and a second antenna structure embedded in the carrier structure. As such, the electronic package provides more antenna functions within a limited space so as to improve the signal quality and transmission rate of electronic products. An electronic device having the electronic package is also provided. The electronic device is applicable to an electronic product having an antenna function.

HIGH FREQUENCY PACKAGE

A high frequency package includes a package having an input terminal and an output terminal. A substrate housed in the package, has a first side, a second side facing the input terminal, and a third side facing the output terminal. The first side extends in a first direction and connects the second side and the third side, and the second side and the third side extend in a second direction intersecting the first direction. A coupling circuit on the substrate is electrically connected to the input terminal and the output terminal to input an input signal from the input terminal disposed at the second side of the substrate and output an output signal to the output terminal disposed at the third side of the substrate. A filter circuit on the substrate is electrically connected to the coupling circuit, an is configured to reduce third-order IMD (Inter Modulation Distortion) included in the output signal. The output signal is output from the coupling circuit in a middle of the output terminal side of the third side of the substrate. The filter circuit is arranged on an edge of the first side of the substrate, and an edge of the third side of the substrate.

INDUCTOR RF ISOLATION STRUCTURE IN AN INTERPOSER AND METHODS OF FORMING THE SAME
20240014115 · 2024-01-11 ·

A semiconductor structure includes an interposer including redistribution wiring interconnects and redistribution insulating layers; a first semiconductor die attached to the interposer through a first array of solder material portions; and a second semiconductor die attached to the interposer through a second array of solder material portions. The interposer includes at least one inductor structure located between an area of the first array of solder material portions and an area of the second array of solder material portions in a plan view and laterally encloses a respective area in the plan view.

High-power amplifier package

Package assemblies for improving heat dissipation of high-power components in microwave circuits are described. A laminate that includes microwave circuitry may have cut-outs that allow high-power components to be mounted directly on a heat slug below the laminate. Electrical connections to circuitry on the laminate may be made with wire bonds. The packaging allows more flexible design and tuning of packaged microwave circuitry.

HIGH FREQUENCY AMPLIFIER

A amplifier device includes an amplifier, a coupling circuit, and a filter circuit. The amplifier amplifies a high frequency signal, and outputs to signal output ports the high frequency signal. The coupling circuit is provided side-by-side with the amplifier in a first direction on a substrate, connected to the signal output ports, and configured to couple output signals and output one output signal to an output terminal. The filter circuit is provided on the substrate and connected to the coupling circuit, and configured to reduce third-order IMD included in the one output signal. The one output signal is output from a middle of the substrate in a second direction intersecting with the first direction, and the filter circuit is arranged next to an edge of the substrate in the second direction, and arranged next to an edge of the substrate on the output terminal side in the first direction.

INDUCTIVE COMPENSATION IN MEMORY SYSTEMS

An apparatus comprising memory having at least one memory die is disclosed. The apparatus may comprises a memory controller. A data bus is coupled to the controller and the memory. A supplemental inductor is coupled to the data bus.