A semiconductor device includes a substrate, an active region provided in the substrate, a plurality of gate fingers provided on the active region, extending in an extension direction, and arranged in an arrangement direction orthogonal to the extension direction, and a gate connection wiring commonly connected to the plurality of gate fingers and provided between the plurality of gate fingers and a first side surface of the substrate, wherein when viewed from the arrangement direction, a first position where a first end of a first gate finger as a part of the plurality of gate fingers is connected to the gate connection wiring is closer to the first side surface than a second position where a first end of a second gate finger as another part of the plurality of gate fingers is connected to the gate connection wiring.

Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding ribbon bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding ribbon may have a width of greater than about five times a thickness of the bonding ribbon.

A high frequency circuit includes: a first wire provided on a front surface of a board and being in contact with a heat generation part; a second wire provided on the front surface of the board and connected to ground; and a chip resistor connected between the first wire and the second wire and having a thermal conductive characteristic and an electric insulation characteristic, and the first wire includes: a wire part which is disposed between the heat generation part and the chip resistor, and which has a characteristic impedance equal to an impedance as a reference for impedance matching in the first wire; and a wire part which is disposed on a low temperature side with the chip resistor being set as a boundary, and which has a thermal resistance higher than that of the chip resistor.

RF transistor amplifiers include an RF transistor amplifier die having a Group III nitride-based semiconductor layer structure and a plurality of gate terminals, a plurality of drain terminals, and at least one source terminal that are each on an upper surface of the semiconductor layer structure, an interconnect structure on an upper surface of the RF transistor amplifier die, and a coupling element between the RF transistor amplifier die and the interconnect structure that electrically connects the gate terminals, the drain terminals and the source terminal to the interconnect structure.

A packaged radio frequency transistor amplifier includes a package housing, an RF transistor amplifier die that is mounted within the package housing, a first capacitor die that is mounted within the package housing, an input leadframe that extends through the package housing to electrically connect to a gate terminal of the RF transistor amplifier die, and an output leadframe that extends through the package housing to electrically connect to a drain terminal of the RF transistor amplifier die. The output leadframe includes an output pad region, an output lead that extends outside of the package housing, and a first arm that extends from one of the output pad region and the output lead to be adjacent the first capacitor die.

A device that includes a substrate and a power amplifier coupled to the substrate. The substrate includes at least one dielectric layer, a plurality of interconnects, and a capacitor configured to operate as an output match element, where the capacitor is defined by a plurality of capacitor interconnects. The power amplifier is coupled to the capacitor. The capacitor is configured to operate as an output match element for the power amplifier. The substrate includes an inductor coupled to the capacitor, where the inductor is defined by at least one inductor interconnect. The capacitor and the inductor are configured to operate as a resonant trap or an output match element.

A radio frequency module includes: a module board including first and second principal surfaces; first and second power amplifiers on the first principal surface; external-connection terminals on the second principal surface; and first and second via conductors connecting the first and second principal surfaces. The first and second via conductors are spaced apart in the module board, one end of the first via conductor is connected to a first ground electrode of the first power amplifier, the other end of the first via conductor is connected to a first external-connection terminal, one end of the second via conductor is connected to a second ground electrode of the second power amplifier, the other end of the second via conductor is connected to a second external-connection terminal, and the first and second via conductors each penetrate through the module board in a direction normal to the first and second principal surfaces.

A wafer-level chip structure, a multiple-chip stacked and interconnected structure and a fabricating method thereof, wherein the wafer-level chip structure includes: a through-silicon via, which penetrates a wafer; a first surface including an active region, a multi-layered redistribution layer and a bump; and a second surface including an insulation dielectric layer, and a frustum transition structure connected with the through-silicon via. In an embodiment of the present application, a frustum type impedance transition structure is introduced into a position between a TSV exposed area on a backside of a wafer and a UBM so as to implement an impedance matching between TSV and UBM, thereby alleviating the problem of signal distortion that is caused by an abrupt change of impedance.

A semiconductor package includes a wiring board including at least one pair of connection structures electrically connecting at least one pair of differential signal transmission lines and at least one pair of differential signal transmission terminals, respectively. The at least one pair of connection structures includes first via structures staggered in a vertical direction, at least one first connection line electrically connecting the first via structures, second via structures staggered in the vertical direction, and at least one second connection line electrically connecting the second via structures. The at least one first connection line is spaced apart from the at least one second connection line in the vertical direction and electrically insulated therefrom, and intersects the at least one second connection line in the vertical direction.

A radio-frequency module includes: a transmitting circuit disposed on a mounting substrate to process a radio-frequency signal input from a transmission terminal and to output a resultant signal to a common terminal; a receiving circuit disposed on the mounting substrate to process a radio-frequency signal input from the common terminal and to output a resultant signal to a reception terminal; a first inductor included in a first transmitting circuit; and a bonding wire connected to the ground and bridging over the first inductor.