An example device in accordance with an aspect of the present disclosure includes a first layer and a second layer to be bonded to the first layer. The first and second layers are materials that generate gas byproducts when bonded, and the first and/or second layers is/are compatible with photonic device operation based on a separation distance. At least one bonding interface layer is to establish the separation distance for photonic device operation, and is to prevent gas trapping and to facilitate bonding between the first layer and the second layer.

A display apparatus includes a substrate having a display area and a peripheral area surrounding the display area, a first initialization voltage line on the substrate, an organic film layer on the first initialization voltage line and having a first contact hole exposing at least a portion of the first initialization voltage line, and a bridge wiring on the organic film layer corresponding to the peripheral area, and in contact with the first initialization voltage line through the first contact hole, wherein the organic film layer corresponding to the peripheral area has a groove or dummy hole, each of the groove and the dummy hole being adjacent to the first contact hole.

A composition includes: a compound (A), having an Si—O bond and a cationic functional group that includes at least one selected from the group consisting of a primary nitrogen atom and a secondary nitrogen atom; a compound (B), having at least three —C(═O)OX groups, wherein X is a hydrogen atom or an alkyl group with a carbon number of from 1 to 6, and from one to six of the —C(═O)OX groups is a —C(═O)OH group; and a compound (C), having a cyclic structure and at least one primary nitrogen atom that is directly bonded to the cyclic structure, the composition having a percentage of the primary and the secondary nitrogen atoms in the compound (A), with respect to a total amount of the primary and the secondary nitrogen atoms in the compound (A) and the primary nitrogen atom in the compound (C), of from 3 mol % to 95 mol %.

A display apparatus includes a substrate having a display area and a peripheral area surrounding the display area, a first initialization voltage line on the substrate, an organic film layer on the first initialization voltage line and having a first contact hole exposing at least a portion of the first initialization voltage line, and a bridge wiring on the organic film layer corresponding to the peripheral area, and in contact with the first initialization voltage line through the first contact hole, wherein the organic film layer corresponding to the peripheral area has a groove or dummy hole, each of the groove and the dummy hole being adjacent to the first contact hole.

A method of mounting a die includes: preparing a die having a bump formation surface on which a plurality of bump electrodes are formed; disposing a vacuum suction tool having a suction surface above the die such that the suction surface faces toward the bump formation surface; sandwiching a porous sheet between the suction surface and the bump formation surface and suctioning the die by the vacuum suction tool; and mounting the die that has been suctioned by the vacuum suction tool in a bonding region of a substrate with an adhesive material interposed therebetween, the porous sheet having a thickness equal to or greater than the protrusion height of the bump electrodes on the bump formation surface. Stabilization and ease of maintenance of vacuum suction can thereby be improved.

A semiconductor device includes an insulating substrate having a main surface, a semiconductor element, a case member, and a sealing resin as a sealing material. The case member includes a recess that is continuous with a connection portion of the case member connected to the insulating substrate, and that faces the internal region. The recess includes a facing surface as an inner wall portion facing the main surface of the insulating substrate. A distance from the main surface of the insulating substrate to the facing surface as the inner wall portion is greater than a distance from the main surface to an upper surface of the semiconductor element.

A method of mounting a die includes: preparing a die having a bump formation surface on which a plurality of bump electrodes are formed; disposing a vacuum suction tool having a suction surface above the die such that the suction surface faces toward the bump formation surface; sandwiching a porous sheet between the suction surface and the bump formation surface and suctioning the die by the vacuum suction tool; and mounting the die that has been suctioned by the vacuum suction tool in a bonding region of a substrate with an adhesive material interposed therebetween, the porous sheet having a thickness equal to or greater than the protrusion height of the bump electrodes on the bump formation surface. Stabilization and ease of maintenance of vacuum suction can thereby be improved.

A semiconductor device includes an insulating substrate having a main surface, a semiconductor element, a case member, and a sealing resin as a sealing material. The case member includes a recess that is continuous with a connection portion of the case member connected to the insulating substrate, and that faces the internal region. The recess includes a facing surface as an inner wall portion facing the main surface of the insulating substrate. A distance from the main surface of the insulating substrate to the facing surface as the inner wall portion is greater than a distance from the main surface to an upper surface of the semiconductor element.

Systems and methods are provided for producing an integrated circuit package, e.g., an SOIC package, having reduced or eliminated lead delamination caused by epoxy outgassing resulting from the die attach process in which an integrated circuit die is attached to a lead frame by an epoxy. The epoxy outgassing may be reduced by heating the epoxy during or otherwise in association with the die attach process, e.g. using a heating device provided at the die attach unit. Heating the epoxy may achieve additional cross-linking in the epoxy reaction, which may thereby reduce outgassing from the epoxy, which may in turn reduce or eliminate subsequent lead delamination. A heating device located at or near the die attach site may be used to heat the epoxy to a temperature of 55 C.5 C. during or otherwise in association with the die attach process.

A dispenser includes a syringe container having a first end and a second end, the syringe container having a length direction extending between the first end and the second end, a plunger movable within the syringe container along the length direction of the syringe container and configured to be positioned on a surface of an underfill solution to be received within the syringe container at a first region between the plunger and the second end, a cap attached airtightly to the first end of the syringe container, a first gas supply line configured to supply a first gas into the syringe container through the cap, and a second gas supply line extending from the cap to the plunger, the second gas supply line being in fluid communication with the first region and configured to supply a second gas into the underfill solution to be received within the syringe container at the first region through a through hole of the plunger.